copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
Absolute Maximum Ratings
( T
J
= 25C unless otherwise specified )
Symbol
Parameter
Condition
Ratings
Units
V
DRM
Repetitive Peak Off-State Voltage
600
V
I
T(RMS)
R.M.S On-State Current
T
C
=107 C
4.0
A
I
TSM
Surge On-State Current
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
30/33
A
I
2
t
I
2
t
4.5
A
2
s
P
GM
Peak Gate Power Dissipation
1.5
W
P
G(AV)
Average Gate Power Dissipation
0.1
W
I
GM
Peak Gate Current
1.0
A
V
GM
Peak Gate Voltage
7.0
V
T
J
Operating Junction Temperature
- 40 ~ 125
C
T
STG
Storage Temperature
- 40 ~ 150
C
Aug, 2003. Rev. 3
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( I
T(RMS)
= 4 A )
High Commutation dv/dt
Sensitive Gate Triggering 4 Mode
Non-isolated Type
General Description
This device is sensitive gate triac suitable for direct coupling
to TTL, HTL, CMOS and application such as various logic
functions, low power AC switching applications, such as fan
speed, small light controllers and home appliance equipment.
2.T2
3.Gate
1.T1
Symbol
TO-220
1/5
Sensitive Gate Triacs
STP4A60S
SemiWell
Semiconductor
1
3
2
STP4A60S
Electrical Characteristics
Symbol
Items
Conditions
Ratings
Unit
Min.
Typ.
Max.
I
DRM
Repetitive Peak Off-State
Current
V
D
= V
DRM
, Single Phase, Half Wave
T
J
= 125 C
1.0
mA
V
TM
Peak On-State Voltage
I
T
= 6 A, Inst. Measurement
1.6
V
I
+
GT1
Gate Trigger Current
V
D
= 6 V, R
L
=10
5
mA
I
-
GT1
5
I
-
GT3
5
I
+
GT3
8
12
V
+
GT1
Gate Trigger Voltage
V
D
= 6 V, R
L
=10
1.4
V
V
-
GT1
1.4
V
-
GT3
1.4
V
+
GT3
1.6
2.0
V
GD
Non-Trigger Gate Voltage
T
J
= 125 C, V
D
= 1/2 V
DRM
0.2
V
(dv/dt)c
Critical Rate of Rise Off-State
Voltage at Commutation
T
J
= 125 C, [di/dt]c = -0.5 A/ms,
V
D
=2/3 V
DRM
5
V/
I
H
Holding Current
10
mA
R
th(j-c)
Thermal Impedance
Junction to case
3.0
C/W
2/5
-50
0
50
100
150
10
1
10
2
10
3
V
+
GT3
X 10
0 (
%
)
V
GT
(t
o
C)
V
+
GT1
V
-
GT1
V
-
GT3
V
GT
(25
o
C)
Junction Temperature [
o
C]
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
V
GD
(0.2V)
25
I
+
GT3
I
GM
(1
A
)
25
I
+
GT1
I
-
GT1
I
-
GT3
P
G(AV)
(0.1W)
P
GM
(1.5W)
V
GM
(7V)
Ga
t
e
V
o
l
t
age
[V
]
Gate Current [mA]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
95
100
105
110
115
120
125
130
= 90
o
= 150
o
= 60
o
= 30
o
= 180
o
= 120
o
A
l
l
o
w
a
bl
e C
a
se
Temp
era
t
u
r
e
[
o
C]
RMS On-State Current [A]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
= 90
o
= 150
o
= 60
o
= 30
o
= 180
o
= 120
o
Pow
e
r
Dis
s
ip
at
ion
[
W
]
RMS On-State Current [A]
10
0
10
1
10
2
0
5
10
15
20
25
30
35
60Hz
50Hz
S
u
r
ge On-S
t
a
te Cu
r
r
en
t
[A
]
Time (cycles)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
10
-1
10
0
10
1
10
2
125
o
C
25
o
C
On-State
C
u
r
r
e
n
t
[
A
]
On-State Voltage [V]
STP4A60S
3/5
Fig 1. Gate Characteristics
Fig 2. On-State Voltage
Fig 3. On State Current vs.
Maximum Power Dissipation
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
2
360
: Conduction Angle
2
360
: Conduction Angle
-50
0
50
100
150
10
1
10
2
10
3
I
+
GT3
I
+
GT1
I
-
GT1
I
-
GT3
X
100
(%)
I
GT
(t
o
C)
I
GT
(25
o
C)
Junction Temperature [
o
C]
10
-2
10
-1
10
0
10
1
10
2
1
10
T
r
ansient T
herm
a
l Im
pedance
[
o
C/
W
]
Time (sec)
4/5
STP4A60S
Fig 8. Transient Thermal Impedance
Fig 7. Gate Trigger Current vs.
Junction Temperature
Fig 9. Gate Trigger Characteristics Test Circuit
A
V
10
6V
R
G
A
V
10
6V
R
G
A
V
10
6V
R
G
Test Procedure
Test Procedure
Test Procedure
A
V
10
6V
R
G
Test Procedure
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