Absolute Maximum Ratings
( T
J
= 25C unless otherwise specified )
Symbol
Parameter
Condition
Ratings
Units
V
DRM
Repetitive Peak Off-State Voltage
600
V
I
T(AV)
Average On-State Current
Half Sine Wave : T
C
= 100 C
3.8
A
I
T(RMS)
R.M.S On-State Current
180 Conduction Angle
6
A
I
TSM
Surge On-State Current
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
66
A
I
2
t
I
2
t
for Fusing
t = 8.3ms
21
A
2
s
di/dt
Critical rate of rise of on-state current
50
A/
P
GM
Forward Peak Gate Power Dissipation
5
W
P
G(AV)
Forward Average Gate Power Dissipation
0.5
W
I
FGM
Forward Peak Gate Current
2
A
V
RGM
Reverse Peak Gate Voltage
5.0
V
V
ISO
Isolation Breakdown Voltage(R.M.S.)
A.C. 1 minute
1500
V
T
J
Operating Junction Temperature
- 40 ~ 125
C
T
STG
Storage Temperature
- 40 ~ 150
C
SCF6C60
Aug, 2003. Rev. 1
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( I
T(RMS)
= 6 A )
Low On-State Voltage (1.4V(Typ.)@ I
TM
)
Isolation Voltage ( V
ISO
= 1500V AC )
General Description
Standard gate triggering SCR is fully isolated package suitable for
the application where requiring high bidirectional blocking voltage
capability and also suitable for over voltage protection ,motor
control circuit in power tool, inrush current limit circuit and heating
control system.
3. Gate
1. Cathode
Symbol
1/5
SemiWell
Semiconductor
Silicon Controlled Rectifiers
2. Anode
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
TO-220F
1
2
3
Electrical Characteristics
( T
C
= 25 C unless otherwise noted )
Symbol
Items
Conditions
Ratings
Unit
Min.
Typ.
Max.
I
DRM
Repetitive Peak Off-State
Current
V
AK
= V
DRM
T
C
= 25 C
T
C
= 125 C
10
200
V
TM
Peak On-State Voltage (1)
I
TM
= 9 A tp=380
1.6
V
I
GT
Gate Trigger Current (2)
V
AK
= 6 V(DC), R
L
=10
T
C
= 25 C
15
mA
V
GT
Gate Trigger Voltage (2)
V
D
= 6 V(DC), R
L
=10
T
C
= 25 C
1.5
V
V
GD
Non-Trigger Gate Voltage (1)
V
AK
= 12 V, R
L
=100 T
C
= 125 C
0.2
V
dv/dt
Critical Rate of Rise Off-State
Voltage
Linear slope up to V
D
= V
DRM
67%
,
Gate open T
J
= 125C
200
V/
I
H
Holding Current
I
T
= 100mA, Gate Open
T
C
= 25 C
20
mA
R
th(j-c)
Thermal Impedance
Junction to case
4.0
C/W
R
th(j-a)
Thermal Impedance
Junction to Ambient
60
C/W
2/5
Notes :
1. Pulse Width = 1.0 ms , Duty cycle 1%
2. R
GK
Current not Included in measurement.
SCF6C60
Fig 2. Maximum Case Temperature
: Conduction Angl e
360
2
Fig 3. Typical Forward Voltage
Fig 4. Thermal Response
Fig 5. Typical Gate Trigger Voltage vs.
Junction Temperature
Fig 6. Typical Gate Trigger Current vs.
Junction Temperature
3/5
SCF6C60
Fig 1. Gate Characteristics
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
10
0
10
1
10
2
125
o
C
25
o
C
On
-
S
ta
te C
u
r
r
e
n
t
[A]
On-State Voltage [V]
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.01
0.1
1
10
T
r
an
sient
T
her
ma
l
I
m
peda
nce
[
o
C/
W
]
Time (sec)
-50
0
50
100
150
0.1
1
10
V
GT
(t
o
C)
V
GT
(25
o
C)
Junction Temperature[
o
C]
-50
0
50
100
150
0.1
1
10
I
GT
(t
o
C)
I
GT
(25
o
C)
Junction Temperature[
o
C]
10
-1
10
0
10
1
10
2
10
3
10
4
10
-1
10
0
10
1
I
GM
(2
A)
V
GD
(0.2V)
P
G(AV)
(0.5W)
P
GM
(5W)
V
GM
(5V)
25
o
C
Ga
te
Vo
l
t
ag
e
[V]
Gate Current [mA]
0
1
2
3
4
5
40
60
80
100
120
140
160
= 180
o
M
a
x
.
Al
low
a
ble Case Tem
per
a
t
ur
e
[
o
C]
Average On-State Current [A]
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