Absolute Maximum Ratings
( T
J
= 25C unless otherwise specified )
Symbol
Parameter
Condition
Ratings
Units
V
DRM
Repetitive Peak Off-State Voltage
600
V
I
T(AV)
Average On-State Current
Half Sine Wave : T
C
= 78 C
7.6
A
I
T(RMS)
R.M.S On-State Current
180 Conduction Angle
12
A
I
TSM
Surge On-State Current
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
120
A
I
2
t
I
2
t
for Fusing
t = 8.3ms
72
A
2
s
di/dt
Critical rate of rise of on-state current
50
A/
P
GM
Forward Peak Gate Power Dissipation
5
W
P
G(AV)
Forward Average Gate Power Dissipation
Over any 20ms period
0.5
W
I
FGM
Forward Peak Gate Current
2
A
V
RGM
Reverse Peak Gate Voltage
5
V
V
ISO
Isolation Breakdown Voltage(R.M.S.)
A.C. 1 minute
1500
V
T
J
Operating Junction Temperature
- 40 ~ 125
C
T
STG
Storage Temperature
- 40 ~ 150
C
BT151F-600
Oct, 2003. Rev. 0
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( I
T(RMS)
= 12 A )
Low On-State Voltage (1.4V(Typ.)@ I
TM
)
Isolation Voltage ( V
ISO
= 1500V AC )
General Description
Standard gate triggering SCR is fully isolated package suitable for
the application where requiring high bidirectional blocking voltage
capability and also suitable for over voltage protection ,motor con-
trol circuit in power tool, inrush current limit circuit and heating
control system.
3. Gate
1. Cathode
Symbol
1/5
SemiWell
Semiconductor
Silicon Controlled Rectifiers
TO-220F
1
2 3
2. Anode
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
Preliminary
Electrical Characteristics
( T
C
= 25 C unless otherwise noted )
Symbol
Items
Conditions
Ratings
Unit
Min.
Typ.
Max.
I
DRM
Repetitive Peak Off-State
Current
V
AK
= V
DRM
T
C
= 25 C
T
C
= 125 C
10
200
V
TM
Peak On-State Voltage (1)
I
TM
= 23 A tp=380
1.7
V
I
GT
Gate Trigger Current (2)
V
AK
= 6 V(DC), R
L
=10
T
C
= 25 C
15
mA
V
GT
Gate Trigger Voltage (2)
V
D
= 6 V(DC), R
L
=10
T
C
= 25 C
1.5
V
V
GD
Non-Trigger Gate Voltage (1)
V
AK
= 12 V, R
L
=100
T
C
= 125 C
0.2
V
dv/dt
Critical Rate of Rise Off-State
Voltage
Linear slope up to V
D
= V
DRM
67%
,
Gate open T
J
= 125C
200
V/
I
H
Holding Current
I
T
= 100mA, Gate Open
T
C
= 25 C
20
mA
R
th(j-c)
Thermal Impedance
Junction to case
3.8
C/W
R
th(j-a)
Thermal Impedance
Junction to Ambient
60
C/W
2/5
Notes :
1. Pulse Width
1.0 ms , Duty cycle
1%
2. R
GK
Current not Included in measurement.
BT151F-600
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-3
10
-2
10
-1
10
0
10
1
10
2
T
r
an
sient
T
h
e
r
ma
l Im
pe
dance [
o
C/
W
]
Time (sec)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
10
0
10
1
10
2
125
o
C
25
o
C
O
n
-S
ta
te
C
u
rre
n
t
[A
]
On-State Voltage [V]
-50
0
50
100
150
0.1
1
10
I
GT
(t
o
C)
I
GT
(2
5
o
C)
Junction Temperature[
o
C]
0
1
2
3
4
5
6
7
8
9
0
20
40
60
80
100
120
140
= 180
o
Max
.
All
o
w
able C
a
se T
e
m
per
atur
e [
o
C]
Average On-State Current [A]
10
-1
10
0
10
1
10
2
10
3
10
4
10
-1
10
0
10
1
I
GM
(2A
)
V
GD
(0.2V)
P
G(AV)
(0.5W)
P
GM
(5W)
V
GM
(5V)
25
o
C
Gate Vol
t
age [V
]
Gate Current [mA]
Fig 2. Maximum Case Temperature
: Conduction Angl e
360
2
Fig 3. Typical Forward Voltage
Fig 4. Thermal Response
Fig 5. Typical Gate Trigger Voltage vs.
Junction Temperature
Fig 6. Typical Gate Trigger Current vs.
Junction Temperature
3/5
BT151F-600
Fig 1. Gate Characteristics
-50
0
50
100
150
0.1
1
10
V
GT
(t
o
C)
V
GT
(2
5
o
C)
Junction Temperature[
o
C]
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