Document Outline
- GENERAL DESCRIPTION
- QUICK REFERENCE DATA
- PINNING
- PIN CONFIGURATION
- SYMBOL
- LIMITING VALUES
- THERMAL RESISTANCES
- STATIC CHARACTERISTICS
- DYNAMIC CHARACTERISTICS
- PACKAGE OUTLINE
- DEFINITIONS
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUX86P
BUX87P
GENERAL DESCRIPTION
High voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use in
converters, inverters, switching regulators, motor control systems and switching applications.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
BUX
86P
87P
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
800
1000
V
V
CEO
Collector-emitter voltage (open base)
-
400
450
V
V
CESAT
Collector-emitter saturation voltage
I
C
= 0.2 A; I
B
= 20 mA
-
1
V
I
C
Collector current (DC)
-
0.5
A
I
CM
Collector current peak value
-
1
A
P
tot
Total power dissipation
T
mb
25 C
-
42
W
t
f
Fall time
I
C
= 0.2 A; I
B(on)
= 20 mA
0.28
-
s
PINNING - SOT82
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
emitter
2
collector
3
base
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BUX
86P
87P
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
800
1000
V
V
CEO
Collector-emitter voltage (open base)
-
400
450
V
V
EBO
Emitter-base voltage (open collector)
-
5
V
I
C
Collector current (DC)
-
0.5
A
I
CM
Collector current (peak value) t
p
= 2 ms
-
1
A
I
B
Base current (DC)
-
0.2
A
I
BM
Base current (peak value)
-
0.3
A
-I
BM
Reverse base current (peak value)
1
-
0.3
A
P
tot
Total power dissipation
T
mb
25 C
-
42
W
T
stg
Storage temperature
-40
150
C
T
j
Junction temperature
-
150
C
1
2
3
b
c
e
1 Turn-off current.
November 1995
1
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUX86P
BUX87P
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-mb
Junction to mounting base
-
3
K/W
R
th j-a
Junction to ambient
in free air
100
-
K/W
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
V
BE
= 0 V; V
CE
= V
CESMmax
-
-
100
A
I
CES
V
BE
= 0 V; V
CE
= V
CESMmax
;
-
-
1.0
mA
T
j
= 125 C
I
EBO
Emitter cut-off current
V
EB
= 5 V; I
C
= 0 A
-
-
1
mA
V
CEsat
Collector-emitter saturation voltages I
C
= 0.1 A; I
B
= 10 mA
-
-
0.8
V
V
CEsat
I
C
= 0.2 A; I
B
= 20 mA
-
-
1
V
V
BEsat
Base-emitter saturation voltage
I
C
= 0.2 A; I
B
= 20 mA
-
-
1
V
h
FE
DC current gain
I
C
= 50 mA; V
CE
= 5 V
26
50
125
V
CEOsust
Collector-emitter sustaining voltage
I
C
= 100 mA;
BUX86P
400
-
-
V
I
Boff
= 0; L = 25 mH
BUX87P
450
-
-
V
DYNAMIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (resistive load).
I
C
= 0.2 A; I
Bon
= 20 mA; -I
Boff
= 40 mA;
V
CC
= 250 V
t
on
Turn-on time
0.25
0.5
s
t
s
Turn-off storage time
2
3.5
s
t
f
Turn-off fall time
0.28
-
s
t
f
Turn-off fall time
T
mb
= 95 C
-
1.3
s
November 1995
2
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUX86P
BUX87P
Fig.1. Test circuit resistive load. V
IM
= -6 to +8 V
V
CC
= 250 V; tp = 20
s;
= tp / T = 0.01.
R
B
and R
L
calculated from I
Con
and I
Bon
requirements.
Fig.2. Switching times waveforms with resistive load.
Fig.3. Normalised power dissipation.
PD% = 100
PD/PD
25 C
= f (T
mb
)
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical base-emitter saturation voltage.
V
BEsat
= f(I
B
); parameter I
C
Fig.6. Typical collector-emitter saturation voltage.
V
CEsat
= f(I
B
); parameter I
C
tp
T
VCC
R
R
T.U.T.
0
VIM
B
L
1.0E-06
0.0001
0.01
1
0.01
0.1
1
10
0
0.2
0.1
0.05
0.02
0.5
Zth / (K/W)
bux86p
t / s
D=
D =
tp
T
T
P
t
D
t
p
IC
IB
10 %
10 %
90 %
90 %
ton
toff
ts
tf
IBon
-IBoff
ICon
tr
30ns
0
5
10
15
20
0.6
0.7
0.8
0.9
VBESAT / V
BUX86P
IB / mA
IC =
0.2 A
0.1 A
50 mA
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
5
10
15
20
25
30
0
2
4
6
8
10
IB / mA
VCESAT / V
BUX86P
IC =
50 mA
0.1 A
0.2 A
November 1995
3
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUX86P
BUX87P
Fig.7. Typical DC current gain.
h
FE
= f(I
C
); parameter V
CE
.
Arrows indicate conditions protected by 100% test.
Fig.8. Typical DC current gain.
h
FE
= f(I
C
); parameter V
CE
Fig.9. Typical DC current gain.
h
FE
= f(I
C
); parameter V
CE
Fig.10. Forward bias safe operating area. T
mb
= 25 C
I
Region of permissible DC operation.
II
Extension for repetitive pulse operation.
NB:
Mounted with heatsink compound and
30
5 newton force on the centre of the
envelope.
0.001
0.01
0.1
1
1
10
100
1000
hFE
BUX86P
IC / A
Typical gain
Limit gain
VCE=5V
Tj=25 C
10
100
1000
0.001
0.01
0.1
1
10
= 0.01
tp =
1 ms
10 ms
DC
IC / A
BUX87P
VCE / V
I
II
ICM max
IC max
BUX86P
0.001
0.01
0.1
1
1
10
100
1000
hFE
IC / A
Typical gain
Limit gain
VCE=5V
Tj=95 C
0.001
0.01
0.1
1
1
10
100
1000
Typical gain
Limit gain
VCE=5V
Tj= -40 C
hFE
BUX86P
IC / A
November 1995
4
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUX86P
BUX87P
MECHANICAL DATA
Dimensions in mm
Net Mass: 0.8 g
Fig.11. SOT82; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT82 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
4.58
2.54
max
1)
1.2
2.8
2.3
3.1
2.5
1
2
3
0.88
max
2.29
15.3
min
11.1
max
3.75
7.8
max
1) Lead dimensions within this
zone uncontrolled.
0.5
mounting
base
November 1995
5
Rev 1.100
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