2N7091
Document Number 2653
Issue 1
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
V
DS
Drain Source Voltage
V
GS
Gate Source Voltage
I
D
Continuous Drain Current (T
J
= 150C)
T
C
= 25C
T
C
= 100C
I
DM
Pulsed Drain Current
P
D
Power Dissipation
T
C
= 25C
T
C
= 100C
T
J
, T
stg
Operating Junction and Storage Temperature Range
T
L
Lead Temperature (
1/
16
" from case for 10 sec.)
- 100V
20V
-14A
-8.7A
56A
70W
27W
55 to 150C
300C
MECHANICAL DATA
Dimensions in mm(inches)
1 2 3
0.89 (0.035)
1.14 (0.045)
10.41 (0.410)
10.67 (0.420)
3.56 (0.140)
3.81 (0.150)
4.83 (0.190)
5.08 (0.200)
10.
41 (
0
.
4
1
0
)
10.
92 (
0
.
4
3
0
)
13.
3
8
(
0
.
527
)
13.
6
4
(
0
.
537
)
1
6
.
3
8 (
0
.
645)
1
6
.
8
9 (
0
.
665)
0.64 (0.025)
0.89 (0.035)
3.05 (0.120)
BSC
2.54 (0.100)
BSC
Dia.
1
2
.
0
7 (
0
.
500)
1
9
.
0
5 (
0
.
750)
Dia.
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
TO257AB Metal Package
PCHANNEL
ENHANCEMENT MODE
TRANSISTOR
FEATURES
TO257AB HERMETIC PACKAGE FOR
HIGH RELIABILITY APPLICATIONS
SCREENING OPTIONS AVAILBLE
SIMPLE DRIVE REQUIREMENTS
Pin 1 Gate
Pin 2 Drain
Pin 3 Source
V
(BR)DSS
-100V
I
D(A)
-14A
R
DS(on)
0.20
W
W
W
W
Parameter
Min.
Typ.
Max.
Unit
R
thJC
Thermal resistance Junction-Case
1.8
R
thJA
Thermal resistance Junction-ambient
80
C/W
R
thCS
Thermal resistance Case to Sink
1.0
2N7091
Document Number 2653
Issue 1
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
I
D
= -250A
V
DS
= V
GS
I
D
= -250A
V
DS
= 0
V
GS
= 20V
V
DS
= -80V
V
GS
= 0
T
J
= 125C
V
DS
= -10V
V
GS
= -10V
V
GS
= -10V
I
D
= 8.7A
T
J
= 125C
V
DS
= -15V
I
DS
= -8.7A
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
DS
= -50
V
GS
= -10V
I
D
= -14A
V
DD
= -50V
I
D
= -14A
V
GEN
=-10V
R
L
= 3.5
W
R
G
= 4.7
W
I
F
= -14A
V
GS
= 0
I
F
= -14A
di/dt = 100A/s
ELECTRICAL CHARACTERISTICS
(T
J
= 25C unless otherwise stated)
THERMAL RESISTANCECHARACTERISTICS
DrainSource Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
OnState Drain Current
1
Drain Source OnState
Resistance
1
Forward Transconductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
2
Gate Source Charge
2
Gate Drain Charge
2
TurnOn Delay Time
2
Rise Time
2
TurnOff Delay Time
2
Fall Time
2
Continuous Current
Pulsed Current
Diode Forward Voltage
1
Reverse Recovery Time
Reverse Recovery Charge
-100
-2
-4
100
-25
-250
-14
0.15
0.20
2.3
0.32
5.0
1300
750
310
50
62
10
15
27
35
10
30
50
80
40
80
40
60
-14
-56
-2
150
300
0.3
V
V
nA
A
A
W
S
pF
nC
ns
A
V
ns
C
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
STATIC ELECTRICAL RATINGS
DYNAMIC CHARACTERISTICS
SOURCE DRAIN DIODE CHARACTERISTICS
1
Pulse test : Pulse Width < 300
ms ,Duty Cycle < 2%
2
Independent of Operating Temperature
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