2N6782
6/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
V
DS
Drain Source Voltage
GR
Drain Gate Voltage (R
GS
= 1M
W
)
I
D
@Tcase = 25C
Continuous Drain Current
I
D
@Tcase = 100C
Continuous Drain Current
I
DM
Pulsed Drain Current 1
V
GS
Gate Source Voltage
P
D
@ T
case
= 25C
Maximum Power Dissipation
P
D
@ T
case
= 100C
Maximum Power Dissipation
Junction to Case
Linear Derating Factor
Junction to ambient
Linear Derating Factor
T
J
,T
stg
Operating and Storage Temperature Range
Lead Temperature
(1/16" from case for 10 secs)
100V
100V
3.5V
2.25A
8V
40V
15W
6W
0.12W/C
0.005W/C
-55 to +150C
300C
MECHANICAL DATA
Dimensions in mm (inches)
NCHANNEL
POWER MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
APPLICATIONS
FAST SWITCHING
MOTOR CONTROLS
POWER SUPPLIES
TO39
0.89
(0.035)
max.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
5.08 (0.200)
typ.
45
12.70
(0.500)
min.
4.19 (0.165)
4.95 (0.195)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
7.75 (0.305)
8.51 (0.335)
dia.
1
2
3
Pin 1 - Source
Pin 2 - Gate
Pin 3 Drain and Case
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
V
nA
mA
A
V
W
V
S (
)
pF
ns
A
A
V
V
C\W
THERMAL CHARACTERISTICS
2N6782
6/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
100*
2*
4.0*
1*
4.0*
100*
200*
-100*
0.25*
1*
3.5
2.1*
0.6*
1.08*
1.0*
3.0*
60*
200*
40*
100*
10*
25*
15*
25*
25*
20*
-3.5*
-8
-0.75*
-1.5*
200
8.33*
170
V
GS
= 0
I
D
= 0.25mA
V
DS
= V
GS
I
D
= 0.5A
T
A
= 125C
V
GS
= 20V
I
D
= 0.5A
T
A
= 125C
V
GS
= -20V
V
DS
= 0.8 Max.
Ratings V
GS
=0
V
DS
= Max.
Ratings V
GS
=0
T
C
= 125C
V
DS
2V
DS(ON)
V
GS
= 10V
V
GS
= 10V
I
D
= 3.5A
V
GS
=
10V
I
D
= 2.25A
T
C
= 125C
V
DS
2V
DS(ON)
I
DS
= 2.25A
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
DD
= 34V
I
D
= 2.25A
R
G
= 25
W
R
L
= 15
W
(MOSFET switching times are essentially
independent of operating temperature.)
MOdified MOS POWER
symbol showing the intergal
P-N junction rectifier.
I
S
= -3.5A
V
GS
= 0
T
C
= 25C
I
F
=I
S
T
J
= 150C
d
i
/ d
t
=
100A/
m
s
Free Air Operation
ELECTRICAL CHARACTERISTICS
(Tcase = 25C unless otherwise stated)
Drain Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage Forward
Gate Body Leakage Reverse
Zero Gate Voltage Drain Current
On State Drain Current1
Static Drain Source On-State
Voltage1
Static Drain Source On-State
Resistance1
Forward Transductance 1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Continuous Source Current Body
Diode
Source Current1 (Body Diode)
Diode Forward Voltage
1
Reverse Recovery Time
BV
DSS
V
GS(th)
I
GSSF
I
GSSR
I
DSS
I
D(on)
V
DS(on)
R
DS(on)
gfs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
R
q
JC
R
q
JPC
STATIC ELECTRICAL RATINGS
Notes
1) Pulse Test: Pulse Width
300
m
s,
d
2%
* JEDEC registered Values
DYNAMIC CHARACTERISTICS
BODY DRAIN DIODE RATINGS & CHARACTERISTICS
Thermal Resistance Junction Case
Thermal Resistance Junction PC Board
,
5
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