DESCRIPTION
The 2N5339X silicon expitaxial planar
NPN transistor in jedec TO-39 metal
case intended for use as drivers for
high power transistors in general
purpose, amplifier and switching circuit
ABSOLUTE MAXIMUM RATINGS
T
CASE
= 25c unless otherwise stated
2N5338X
2N5339X
LAB
SEME
Prelim. 11/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
NPN SILICON
TRANSISTORS
V
CBO
Collector Base Voltage(I
E
= 0)
V
CEO
Collector Emitter Voltage (I
B
= 0)
V
EBO
Emitter Base Voltage (I
C
= 0)
I
C
Collector Current
I
CM
Collector Peak Current
I
B
Base Current
P
tot
Total Dissipation at T
case
25C
T
amb
25C
T
stg
Storage Temperature Range
T
j
Junction temperature
100V
100V
6V
5A
7A
1A
6W
1W
65 to +200C
200C
MECHANICAL DATA
Dimensions in mm (inches)
0.89
(0.035)
max.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
5.08 (0.200)
typ.
45
12.70
(0.500)
min.
4.19 (0.165)
4.95 (0.195)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
7.75 (0.305)
8.51 (0.335)
dia.
1
2
3
TO-39
Pin 1 Emitter
Pin 2 Base
Pin 3 Collector
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
A
A
mA
A
V
V
V
--
MHz
pF
ns
m
s
ns
R
thj-case
R
thj-amb
29.2
175
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
C/W
C/W
10
10
1
100
100
0.7
1.2
1.2
1.8
60
60
240
40
30
250
200
2.5
200
2N5338X
2N5339X
LAB
SEME
Prelim. 11/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
I
CBO
I
CEX
I
CEO
V
CEO(sus)*
V
CE(sat)*
V
BE(sat)*
h
FE*
f
T
C
CBO
t
on
t
s
t
f
Collector Cut Off Current
Collector Cut Off Current
Collector Cut Off Current
Collector Emitter Sustaining Voltage
Collector Emitter Saturation Voltage
Base Emitter Voltage
DC Current Gain
Transistion Frequency
Collector Base Capacitance
Turn-on Time
Storage Time
Fall Time
I
E
= 0
V
CB
= 100V
V
BE
= 1.5V
V
CE
= 90V
Tcase = 150C
I
B
= 0
V
CE
= 90V
I
B
= 0
I
C
= 50mA
I
C
= 2A
I
B
= 0.2A
I
C
= 5A
I
B
= 0.5A
I
C
= 2A
I
B
= 0.2A
I
C
= 5A
I
B
= 0.5A
I
C
= 0.5A
V
CE
= 2V
I
C
= 2A
V
CE
= 2V
I
C
= 5A
V
CE
= 2V
I
C
=0.5mA
V
CE
= 10V
I
E
= 0
V
CB
= 10V
f = 0.1MHz
I
C
= 2A
V
CC
= 40V
I
B1
= 0.2mA
I
C
= 2A
V
CC
= 40V
I
B1
= - I
B2
= 0.2A
ELECTRICAL CHARACTERISTICS
(Tcase = 25C unless otherwise stated)
* Pulse test t
p
= 300
m
s , Duty Cycle 1.5%
THERMAL DATA
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