2N3904
Prelim. 7/00
LAB
SEME
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
GENERAL PURPOSE
NPN TRANSISTOR
FOR HIGH RELIABILITY
APPLICATIONS
FEATURES
SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
CECC SCREENING OPTIONS
HIGH SPEED SATURATED SWITCHING
V
CBO
Collector Base Voltage
V
CEO
Collector Emitter Voltage
V
EBO
Emitter Base Voltage
I
C
Collector Current
P
D
Total Device Dissipation
@ T
A
=25C
Derate above 25C
R
q
JA
Thermal Resistance Junction Ambient
T
STG
, T
J
Operating and Storage Temperature Range
60V
40V
6V
200mA
350mW
3.33mW / C
300C/W
55 to +175C
MECHANICAL DATA
Dimensions in mm (inches)
TO-18 METAL PACKAGE
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25C unless otherwise stated)
PIN 1 Emitter
PIN 2 Base
PIN 3 Collector
1
3
2
2.54 (0.100)
Nom.
0.48 (0.019)
0.41 (0.016)
dia.
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
5.
33 (0
.2
10)
4.
32 (0
.1
70)
12
.7
(
0
.
500
)
mi
n.
2N3904
Prelim. 7/00
LAB
SEME
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d
Delay Time
t
r
Rise Time
t
s
Storage Time
t
f
Fall Time
f
t
Current Gain Bandwidth Product
C
ob
Output Capacitance
C
ib
Input Capacitance
h
ie
Input Impedance
h
oe
Output Admittance
h
re
Voltage Feedback Ratio
h
fe
Small Signal Current Gain
N
F
Noise Figure
300
4
8
1
10
1
40
0.5
8
100
400
5
35
35
200
50
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
* Pulse Test: t
p
300
m
s,
d
2%.
40
60
6
50
50
0.2
0.3
0.65
0.85
0.95
40
70
100
300
60
30
I
C
= 1mA
I
B
= 0
I
C
= 10
m
A
I
E
= 0
I
E
= 10
m
A
I
C
= 0
V
CE
= 30V
V
EB
= 3V
I
C
= 10mA
I
B
= 1mA
I
C
= 50mA
I
B
= 5mA
I
C
= 10mA
I
B
= 1mA
I
C
= 50mA
I
B
= 5mA
I
C
= 0.1mA
I
C
= 1mA
V
CE
= 1V
I
C
= 10mA
I
C
= 50mA
I
C
= 100mA
V
(BR)CEO*
Collector Emitter Breakdown Voltage
V
(BR)CBO
Collector Base Breakdown Voltage
V
(BR)EBO
Emitter Base Breakdown Voltage
I
BL
Base Cut-off Current
I
CEX
Collector Emitter Cut-off Current
V
CE(sat)
Collector Emitter Saturation Voltage
V
BE(sat)*
Base Emitter Saturation Voltage
h
FE*
DC Current Gain
V
nA
V
V
--
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise stated)
V
CE
= 20V
I
C
= 10mA
f = 100MHz
V
CB
= 5V
I
E
= 0
f = 1MHz
V
BE
= 0.5V
I
C
= 0
f = 1MHz
V
CE
= 10V
I
C
= 1mA
f = 1kHz
V
CE
= 5V
I
C
= 100
m
A
f = 1kHz
R
S
= 1k
W
V
CC
= 3V
V
BE
= 0.5V
I
C
= 10mA
I
B1
= 1mA
V
CC
= 3V
V
BE
= 0.5V
I
B1
= I
B2
= 1mA
MHz
pF
pF
k
W
m
hmos
x 10
-4
--
dB
ns
SMALL SIGNAL CHARACTERISTICS
(T
A
= 25C unless otherwise stated)
SWITCHING CHARACTERISTICS
(T
A
= 25C unless otherwise stated)
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