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Электронный компонент: 2N3767SMD

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Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 2754
Issue 2
2N3767SMD
V
CBO
Collector Base Voltage (IE = 0)
V
CEO
Collector Emitter Voltage (IB = 0)
V
EBO
Emiiter Base Voltage (IB = 0)
I
B
Base Current
I
C
Collector Current
T
J ,
TSTG
Operating and Storage Junction Temperature Range
P
D
Total Device Dissipation @ T
C
= 25C
Derate above 25C
100V
80V
6V
2A
4A
55 to +150C
25W
5C/W
MECHANICAL DATA
Dimensions in mm (inches)
SMD1 (TO-276AB)
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
PIN 1 Base
Underside View
PIN 2 Collector
PIN 3 Emitter
3 . 6 0 ( 0 . 1 4 2 )
M a x .
3 . 7 0 ( 0 . 1 4 6 )
3 . 4 1 ( 0 . 1 3 4 )
3 . 7 0 ( 0 . 1 4 6 )
3 . 4 1 ( 0 . 1 3 4 )
0 . 8 9
( 0 . 0 3 5 )
m i n .
4.
14
(
0.
163)
3.
84
(
0.
151)
10.
69
(
0
.
4
21)
10.
39
(
0
.
4
09)
9 . 6 7 ( 0 . 3 8 1 )
9 . 3 8 ( 0 . 3 6 9 )
1 1 . 5 8 ( 0 . 4 5 6 )
1 1 . 2 8 ( 0 . 4 4 4 )
16.
02
(
0
.
6
31)
15.
73
(
0
.
6
19)
0 . 5 0 ( 0 . 0 2 0 )
0 . 2 6 ( 0 . 0 1 0 )
0.
76
(
0
.
030) mi
n
.
1
3
2
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
NPN BIPOLAR TRANSISTOR
IN A CERAMIC SURFACE MOUNT
PACKAGE FOR
HIGH REL APPLICATIONS
FEATURES
HIGH VOLTAGE
FAST SWITCHING
CERAMIC SURFACE MOUNT PACKAGE
SCREENING OPTIONS AVAILABLE
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
C
= 100mA
I
B
= 0
V
CE
= 100V
V
BE
= 1.5V
V
CE
= 70V
V
BE
= 1.5V
T
A
= 150
C
V
EB
= 6V
I
C
= 0
V
CE
= 80V
I
B
= 0
V
CB
= 100V
I
E
= 0
I
C
= 50mA
V
CE
= 5V
I
C
= 500mA
V
CE
= 5V
I
C
= 1.0A
V
CE
= 10V
I
C
= 1.0A
I
B
= 0.1A
I
C
= 1.0A
V
CE
= 10V
V
CE
= 10V
I
C
= 500mA
f = 10MHz
V
CB
= 10V
I
C
= 0A
f = 100KHz
V
CE
= 10V
I
C
= 100mA
f = 1.0kHz
80
100
1.0
0.75
0.7
0.1
30
40
160
20
2.5
1.5
10
50
40
OFF CHARACTERISTICS
Document Number 2754
Issue 2
2N3767SMD
ELECTRICAL CHARACTERISTICS
(T
C
= 25C unless otherwise stated)
1) Pulse test : Pulse Width < 100
s ,Duty Cycle <1%
2) f
t
is defined as the frequency at which |h
fe
| extrapolates to untity.
ON CHARACTERISTICS
TRANSIENT CHARACTERISTICS
V
A
mA
--
V
MHz
pF
--
V
(BR)CEO
Collector Emitter Breakdown Voltage
1
I
CEX
Collector Cutoff Current
I
EBO
Emitter Base Cutoff Current
I
CEO
Collector Emitter Cutoff Current
I
CBO
Collector Base Cutoff Current
h
FE
DC Current Gain
V
CE(sat)
Collector Emitter Saturation Voltage
V
BE
Base Emitter Voltage
f
T
Transistion Frequency
C
OB
Common Base Output Capacitance
h
fe
Small Signal Current Gain
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.