2N3501CSM4
Prelim. 12/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
HIGH VOLTAGE, MEDIUM POWER, NPN
TRANSISTOR IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
HERMETIC CERAMIC SURFACE MOUNT
PACKAGE
CECC SCREENING OPTIONS
SPACE QUALITY LEVELS OPTIONS
HIGH VOLTAGE
APPLICATIONS:
Hermetically sealed surface mount version of
the popular 2N3501 for high reliability / space
applications requiring small size and low
weight devices.
V
CBO
Collector Base Voltage
V
CEO
Collector Emitter Voltage (I
B
= 0)
V
EBO
Emitter Base Voltage (I
B
= 0)
I
C
Collector Current
P
D
Total Device Dissipation T
A
= 25 C
P
D
Derate above 25C
T
stg
Storage Temperature
R
ja
Thermal Resistance Junction to Ambient
150V
150V
6V
300mA
500mW
2.85mW / C
65 to 200C
350C/W
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
LCC3 PACKAGE
Underside View
PAD 1 Collector
PAD 2 N/C
PAD 3 Emitter
PAD 4 Base
1
2
3
4
5.59 0.13
(0.22 0.005)
0.23
(0.009)
rad.
1.02 0.20
(0.04 0.008)
2.03 0.20
(0.08 0.008)
1.40 0.15
(0.055 0.006)
0.25 0.03
(0.01 0.001)
0.23
(0.009)
min.
1.
27 0.
05
(
0
.
05 0.
002
)
3.
81 0.
13
(
0
.
15 0.
00
5)
0.
64 0.
08
(
0
.
025 0.
003)
2N3501CSM4
Prelim. 12/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
C
= 10mA
I
B
= 0
I
C
= 10
A
I
E
= 0
I
E
= 10
A
I
C
= 0
V
CB
= 75V
I
E
= 0
V
CB
= 75V
I
E
= 0
T
A
= 150
C
V
EB(off)
= 4V
I
C
= 0
I
C
= 0.1mA
V
CE
= 10V
I
C
= 1mA
V
CE
= 10V
I
C
= 10mA
V
CE
= 10V
1
I
C
= 150mA
V
CE
= 10V
1
I
C
= 300mA
V
CE
= 10V
1
I
C
= 10mA
I
B
= 1mA
I
C
= 50mA
I
B
= 5mA
I
C
= 150mA
I
B
= 15mA
I
C
= 10mA
I
B
= 1mA
I
C
= 50mA
I
B
= 5mA
I
C
= 150mA
I
B
= 15mA
V
CE
= 20V
I
C
= 20mA
f = 100MH
Z
V
CB
= 10V
I
E
= 0
f = 1MH
Z
V
EB
= 0.5V
I
C
= 0
f = 1MH
Z
V
CE
= 10V
I
C
= 10mA
f = 1KH
Z
V
CE
= 10V
I
C
= 10mA
f = 1KH
Z
V
CE
= 10V
I
C
= 10mA
f = 1KH
Z
V
CE
= 10V
I
C
= 10mA
f = 1KH
Z
150
150
6
0.05
50
35
50
75
100
300
20
0.2
0.25
0.4
0.8
0.9
1.2
150
8
80
0.25
1.25
4
375
200
OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise stated)
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
V
A
nA
--
V
V
MH
Z
pF
x10
-4
--
V
(BR)CEO
Collector-Emitter Breakdown Voltage
1
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cutoff Current
I
EBO
Emitter Cutoff Current
h
FE
DC Current Gain
V
CE(SAT)
Collector-Emitter Saturation Voltage
1
V
BE(SAT)
Base-Emitter Saturation Voltage
1
f
T
Current-GainBandwidth Product
2
C
obo
Output Capacitance
C
ibo
Input Capacitance
h
ie
Input Impedance
h
re
Voltage Feedback Ratio
h
fe
Small-Signal Current Gain
h
oe
Output Admittance
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
2N3501CSM4
Prelim. 12/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
ELECTRICAL CHARACTERISTICS Continued
(T
A
= 25C unless otherwise stated)
1) Pulse test : Pulse Width < 300
s ,Duty Cycle < 2%
2) f
t
is defined as the frequency at which |h
fe
|.f
test
SWITCHING CHARACTERISTICS
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
I
C
= 150mA
I
B1
= 15mA
V
CC
= 100V
V
EB(off)
= -2V
I
C
= 150mA
I
B1
= 15mA
V
CC
= 100V
V
EB(off)
= -2V
I
C
= 150mA
V
CC
= 100V
I
B1
= I
B2
= 15mA
I
C
= 150mA
V
CC
= 100V
I
B1
= I
B2
= 15mA
20
35
800
80
ns
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