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Электронный компонент: 2N3439

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7V
1A
0.5A
5W
1W
55 to 200C
200C
2N3439
2N3440
Prelim.12/99
HIGH VOLTAGE
NPN TRANSISTORS
FEATURES
DUAL SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
HIGH VOLTAGE
APPLICATIONS:
These devices are particularly suited as dri-
vers in high-voltage low current inverters,
switing and series regulators.
V
CBO
Collector Base Voltage (I
E
= 0)
V
CEO
Collector Emitter Voltage (I
B
= 0)
V
EBO
Emitter Base Voltage (I
C
= 0)
I
C
Collector Current
I
B
Base Current
P
tot
Total Power Dissipation at T
case
25C
T
amb
50C
T
stg
Storage Temperature
T
j
Junction Temperature
450V
350V
300V
250V
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
2N3439
2N3440
Semelab plc.
Telephone +44(0)1455 556565.
Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
0.89
(0.035)
max.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
5.08 (0.200)
typ.
45
12.70
(0.500)
min.
4.19 (0.165)
4.95 (0.195)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
7.75 (0.305)
8.51 (0.335)
dia.
1
2
3
Pin 1 = Emitter
Pin 2 = Base
Pin 3 = Collector
TO39 PACKAGE
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
C
= 50mA
2N3439
I
C
= 50mA
2N3440
V
CE
= 300V
2N3439
V
CE
= 200V
2N3440
V
CE
= 450V
2N3439
V
CE
= 300V
2N3440
V
CB
= 350V
2N3439
V
CB
= 250V
2N3440
V
EB
= 6V
I
C
= 50mA
I
B
= 4mA
I
C
= 50mA
I
B
= 4mA
I
C
= 20mA
V
CE
= 10V
I
C
= 2mA
V
CE
= 10V
V
CEO(sus)*
Collector Emitter Sustaining Voltage
(I
B
= 0)
I
CEO
Collector Cut-off Current
(I
B
= 0)
I
CEX
Collector Cut-off Current
(V
BE
= -1.5V)
I
CBO
Collector Base Cut-off Current
(I
E
= 0)
I
EBO
Emitter Cut-off Current (I
C
= 0)
V
CE(sat)*
Collector Emitter Saturation Voltage
V
BE(sat)*
Base Emitter Saturation Voltage
h
FE*
DC Current Gain
2N3439
2N3440
Prelim.12/99
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS
(Tcase = 25C unless otherwise stated)
f
T
Transition Frequency
C
ob
Output Capacitance
hfe
Small Signal Current Gain
I
C
= 10mA
V
CE
= 10V
f = 5MHz
V
CB
= 10V
f = 1MHz
I
C
= 5mA
V
CE
= 10V
f = 1kHz
15
10
25
MHz
pF
--
* Pulse test t
p
= 300
m
s ,
d
2%
DYNAMIC CHARACTERISTICS
(Tcase = 25C unless otherwise stated)
350
250
20
50
500
500
20
20
20
0.5
1.3
40
160
30
V
m
A
A
A
A
V
V
--
--
2N3439 only
Semelab plc.
Telephone +44(0)1455 556565.
Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
THERMAL DATA
Parameter
Min.
Typ.
Max.
Unit
R
q
JA
Thermal Resistance Junction to Ambient
175
C/W
R
q
JC
Thermal Resistance Junction to Case
35
C/W