Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 12/93
LAB
SEME
2N3209CSM
HIGH SPEED, PNP,
SWITCHING TRANSISTOR IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
SILICON PLANAR EPITAXIAL PNP TRAN-
SISTOR
HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)
CECC SCREENING OPTIONS
SPACE QUALITY LEVELS OPTIONS
HIGH SPEED SATURATED SWITCHING
APPLICATIONS:
For high reliablitity general purpose
applications requiring small size and low
weight devices.
V
CBO
Collector
Base Voltage
V
CEO
Collector
Emitter Voltage
V
EBO
Emitter
Base Voltage
I
C
Collector Current
P
D
Total Device Dissipation
P
D
Derate above 50C
R
ja
Thermal Resistance Junction to Ambient
T
j
Max Junction Temperature
T
stg
Storage Temperature
20V
20V
4V
200mA
300mW
2.20mW / C
420C / W
200C
55 to 200C
MECHANICAL DATA
Dimensions in mm (inches)
SOT23 CERAMIC (CSM)
LCC1 PACKAGE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
Underside View
PAD 1
Base
PAD 2
Emitter
PAD 3
Collector
2
1
0.51 0.10
(0.02 0.004)
0.31
(0.012)
1.91 0.10
(0.075 0.004)
3.05 0.13
(0.12 0.005)
2.
54
0.
13
(
0
.
10
0.
005)
0.
76
0.
1
5
(
0
.
03
0.
00
6)
1.02 0.10
(0.04 0.004)
1.40
(0.055)
max.
A
0.31
(0.012)
rad.
rad.
A =
3
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 12/93
LAB
SEME
2N3209CSM
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
on
Turn-on Time
t
off
Turn-off Time
V
CC
= 2V
I
C
= 30mA
I
B1
= 1.5mA
V
CC
= 2V
I
C
= 30mA
I
B1
= I
B2
= 1.5mA
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS
(Tcase = 25C unless otherwise stated)
I
C
= 10mA
I
C
= 10
A
I
E
= 10
A
I
C
= 0
V
CE
= 10V
V
BE
= 0
V
CE
= 10V
V
BE
= 0
T
C
= 125C
I
C
= 10mA
I
B
= 1mA
I
C
= 30mA
I
B
= 3mA
I
C
= 100mA
I
B
= 10mA
I
C
= 10mA
I
B
= 1mA
I
C
= 30mA
I
B
= 3mA
I
C
= 100mA
I
B
= 10mA
I
C
= 10mA
V
CE
= 0.3V
I
C
= 30mA
V
CE
= 0.5V
I
C
= 100mA
V
CE
= 1V
I
C
= 30mA
V
CE
= 0.5V
V
CEO(sus)*
Collector Emitter Sustaining Voltage
V
(BR)CBO*
Collector Base Breakdown Voltage
V
(BR)EBO*
Emitter Base Breakdown Voltage
I
CES*
Collector Cut-off Current
V
CE(sat)*
Collector Emitter Saturation Voltage
V
BE(sat)*
Base Emitter Saturation Voltage
h
FE*
DC Current Gain
T
amb
= 55C
-20
-20
-4
80
10
0.15
0.20
0.60
0.78
0.98
0.85
1.2
1.7
25
30
120
15
12
V
V
V
nA
A
V
V
--
f
T
Transition Frequency
C
EBO
Capacitance
C
CBO
Input Capacitance
I
C
= 30mA
V
CE
= 10V
f = 100MHz
V
EB
= 0.5V
I
C
= 0
f = 1.0MHz
V
CB
= 5V
I
E
= 0
f = 1.0MHz
400
6.0
5.0
MHz
pF
pF
60
90
ns
ns
ELECTRICAL CHARACTERISTICS
(Tcase = 25C unless otherwise stated)
* Pulse test t
p
= 300
s ,
2%
DYNAMIC CHARACTERISTICS
(Tcase = 25C unless otherwise stated)
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