Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/94
LAB
SEME
2N3019CSM
HIGH FREQUENCY, NPN
TRANSISTOR IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)
CECC SCREENING OPTIONS AVAILABLE
SPACE QUALITY LEVELS AVAILABLE
HIGH SPEED SATURATED SWITCHING
APPLICATIONS:
For high reliablitity general purpose
applications requiring small size and low
weight devices.
V
CBO
Collector
Base Voltage
V
CEO
Collector
Emitter Voltage
V
EBO
Emitter
Base Voltage
I
C
Collector Current
P
D
Total Device Dissipation
P
D
Derate above 50C
R
ja
Thermal Resistance Junction to Ambient
T
j
Max Junction Temperature
T
stg
Storage Temperature
140V
80V
7V
1A
350mW
2.00mW / C
350C / W
200C
55 to 200C
MECHANICAL DATA
Dimensions in mm (inches)
SOT23 CERAMIC (CSM)
LCC1 PACKAGE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
PAD 1 Base
Underside View
PAD 2 Emitter
PAD 3 Collector
2
1
0.51 0.10
(0.02 0.004)
0.31
(0.012)
1.91 0.10
(0.075 0.004)
3.05 0.13
(0.12 0.005)
2.
54
0.
13
(
0
.
10
0.
005)
0.
76
0.
1
5
(
0
.
03
0.
00
6)
1.02 0.10
(0.04 0.004)
1.40
(0.055)
max.
A
0.31
(0.012)
rad.
rad.
A =
3
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/94
LAB
SEME
2N3019CSM
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Parameter
Test Conditions
Min.
Typ.
Max. Unit
ELECTRICAL CHARACTERISTICS
(Tcase = 25C unless otherwise stated)
I
C
= 10mA
I
C
= 10
A
I
E
= 10
A
I
C
= 0
V
CB
= 90V
V
BE
= 0
V
CB
= 90V
V
BE
= 0
T
amb
= 150C
V
EB
= 5V
I
C
= 150mA
I
B
= 15mA
I
C
= 500mA
I
B
= 50mA
I
C
= 150mA
I
B
= 15mA
I
C
= 0.1mA
V
CE
= 10V
I
C
= 10mA
V
CE
= 10V
I
C
= 150mA
V
CE
= 10V
I
C
= 500mA
V
CE
= 10V
I
C
= 1A
V
CE
= 10V
I
C
= 150mA
V
CE
= 0.5V
V
CEO*
Collector Emitter Voltage
V
(BR)CBO*
Collector Base Breakdown Voltage
V
(BR)EBO*
Emitter Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
V
CE(sat)*
Collector Emitter Saturation Voltage
V
BE(sat)*
Base Emitter Saturation Voltage
h
FE*
DC Current Gain
T
amb
= 55C
80
140
7
10
10
10
0.20
0.50
1.1
50
90
100
300
50
15
40
V
V
V
nA
A
nA
V
V
--
f
T
Transition Frequency
C
EBO
Capacitance
C
CBO
Input Capacitance
h
fe
Small Signal Current Gain
NF
Noise Figure
I
C
= 50mA
V
CE
= 10V
f = 20MHz
V
EB
= 0.5V
I
C
= 0
f = 1.0MHz
V
CB
= 10V
I
E
= 0
f = 1.0MHz
I
C
= 1mA
V
CE
= 5V
f = 1kHz
I
C
= 100
A
V
CE
= 10V
f = 1kHz
R
g
= 1K
100
60
12
80
400
4
MHz
pF
pF
--
db
t* Pulse test tp = 300
s ,
2%
DYNAMIC CHARACTERISTICS
(Tcase = 25C unless otherwise stated)
PDF 
ZIP