ChipFind - документация

Электронный компонент: 2N2916DCSM

Скачать:  PDF   ZIP
Document Number 2747
Issue 1
2N2916DCSM
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
DUAL NPN PLANAR
TRANSISTORS IN
A HERMETICALLY SEALED
CERAMIC SURFACE MOUNT
PACKAGE FOR HIGH
RELIABILITY APPLICATIONS
FEATURES
Hermetic Ceramic Surface Mount
Package
CECC Screening Options
Space Quality Levels Options
V
CBO
Collector Base Voltage
V
CEO
Collector Emitter Voltage 1
V
EBO
Emitter Base Voltage
I
C
Continuous Collector Current
P
D
Total Device Dissipation
T
AMB
= 25C
Derate above 25C
T
STG
Storage Temperature Range
T
L
Lead temperature (Soldering, 10 sec.)
45V
45V
6V
30
300mW
500mW
1.72mW / C
2.86W / C
65 to 200C
300C
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25C unless otherwise stated)
NOTES
1. Base Emitter Diode Open Circuited.
EACH SIDE
TOTAL DEVICE
MECHANICAL DATA
Dimensions in mm (inches)
LCC2 PACKAGE
Underside View
PAD 1 Collector 1
PAD 2 Base 1
PAD 3 Base 2
PAD 4 Collector 2
PAD 5 Emitter 2
PAD 6 Emitter 1
$
!
"
#
2.
54
0.
13
(
0
.
10
0.
005)
0.
64
0.
06
(
0
.
025
0.
003)
0 . 2 3
( 0 . 0 0 9 )
1 . 4 0 0 . 1 5
( 0 . 0 5 5 0 . 0 0 6 )
1 . 6 5 0 . 1 3
( 0 . 0 6 5 0 . 0 0 5 )
2 . 2 9 0 . 2 0
( 0 . 0 9 0 . 0 0 8 )
r a d .
A
1 . 2 7 0 . 1 3
( 0 . 0 5 0 . 0 0 5 )
A =
6 . 2 2 0 . 1 3
( 0 . 2 4 5 0 . 0 0 5 )
4.
32
0.
13
(
0
.
170
0.
005)
Document Number 2747
Issue 1
2N2916DCSM
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter
Test Conditions
1
Min.
Typ.
Max.
Unit
V
nA
mA
nA
--
V
W
mmho
--
pF
--
mV
mV
45
45
6
10
10
2
2
150
600
30
225
300
0.70
0.35
25
32
1
3
6
0.9
1
3
5
0.8
1
V
(BR)CBO
Collector Base Breakdown Voltage
V
(BR)CEO*
Collector Emitter Breakdown Voltage
V
(BR)EBO
Emitter Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
CEO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE
DC Current Gain
V
BE
Base Emitter Voltage
V
CE(sat)
Collector Emitter Saturation Voltage
h
ib
Small Signal Common Base
Input Impedance
h
ob
Small Signal Common Base
Output Admittance
|h
fe
|
Small Signal Common Base
Current Gain
C
obo
Common Base Open Circuit
Output Capacitance
h
FE1
Static Forward Current Gain Balance
h
FE2
Ratio
|V
BE1
V
BE2
|
Base Emitter Voltage
Differential
|D(V
BE1
V
BE2
)DT
A
|
Base Emitter Voltage
Differential Change With
Temperature
I
C
= 10mA
I
E
= 0
I
C
= 10mA
I
B
= 0
I
E
= 10mA
I
C
= 0
V
CB
= 45V
I
E
= 0
T
A
= 150C
V
CE
= 5V
I
B
= 0
V
EB
= 5V
I
C
= 0
V
CE
= 5V
I
C
= 10mA
T
A
= 55C
V
CE
= 5V
I
C
= 100mA
V
CE
= 5V
I
C
= 1mA
V
CE
= 5V
I
C
= 100mA
I
B
= 100mA
I
C
= 1mA
V
CB
= 5V
I
C
= 1mA
f = 1kHz
V
CB
= 5V
I
C
= 1mA
f = 1kHz
V
CE
= 5V
I
C
= 500mA
f = 20MHz
V
CB
= 5V
I
E
= 0
f = 140kHz to 1MHz
V
CE
= 5V
I
C
= 100
mA
See Note 2.
V
CE
= 5V
I
C
= 100
mA
V
CE
= 5V I
C
= 10
mA to 1mA
V
CE
= 5V
I
C
= 100
mA
T
A1
= 25C
T
A2
= 55C
V
CE
= 5V
I
C
= 100
mA
T
A1
= 25C
T
A2
= 125C
ELECTRICAL CHARACTERISTICS
(Tamb = 25C unless otherwise stated)
INDIVIDUAL TRANSISTOR CHARACTERISTICS
TRANSISTOR MATCHING CHARACTERISTICS
* Pulse Test: t
p
= 300
ms , d 1%.
NOTES
1) Terminals not under test are open circuited under all test conditions.
2) The lower of the two readings is taken as h
FE1
.