ChipFind - документация

Электронный компонент: 2N2894

Скачать:  PDF   ZIP
2N2894
Prelim. 4/99
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
PNP SILICON
TRANSISTOR
FEATURES
SILICON PNP TRANSISTOR
HIGH SPEED, LOW SATURATION SWITCH
APPLICATIONS:
GENERAL PURPOSE SWITCHING
APPLICATIONS
V
CBO
Collector Base Voltage
V
CEO
Collector Emitter Voltage
V
EBO
Emitter Base Voltage
I
C
Collector Current
P
D
Total Device Dissipation
@ T
A
=25C
Derate above 25C
P
D
Total Device Dissipation
@ T
C
=25C
Derate above 25C
T
STG
, T
J
Operating and Storage Temperature Range
12V
12V
4V
200mA
360mW
2.06mW / C
12W
6.85mW / C
65 to +200C
MECHANICAL DATA
Dimensions in mm (inches)
TO18
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25C unless otherwise stated)
PIN1 EMITER
Underside View
PIN 2 BASE
PIN 3 COLLECTOR
1
3
2
2.54 (0.100)
Nom.
0.48 (0.019)
0.41 (0.016)
dia.
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
5.
33 (0
.2
10)
4.
32 (0
.1
70)
12
.7
(
0
.
500
)
mi
n.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
m
A
nA
V
V
--
MHz
pF
ns
12
12
12
4
10
80
80
0.15
0.2
0.5
0.78
0.98
0.85
1.2.
1.7
30
40
150
17
25
400
6
6
60
90
I
C
= 10mA
I
B
= 0
I
C
= 10
m
A
V
BE
= 0
I
C
= 10
m
A
I
E
= 0
I
E
= 100
m
A
I
C
= 0
V
CB
= 6V
T
amb
= 125
C
V
CE
= 6V
V
BE
= 0
V
CE
= 6V
V
BE
= 0
I
C
= 10mA
I
B
= 1mA
I
C
= 30mA
I
B
= 3mA
I
C
= 100mA
I
B
= 10mA
I
C
= 10mA
I
B
= 1mA
I
C
= 30mA
I
B
= 3mA
I
C
= 100mA
I
B
= 10mA
I
C
= 10mA
V
CE
= 0.3V
I
C
= 30mA
V
CE
= 0.5V
I
C
= 30mA
V
CE
= 0.5V
T
amb
= -55
C
I
C
= 30mA
V
CE
= 0.5V
V
CE
= 10V
f = 100MHz
I
C
= 30mA
V
CB
= 5V
I
E
= 0
f = 140KHz
V
BE
= 0.5V
I
C
= 0
f = 140KHz
V
CC
= 2V
I
C
= 30mA
I
B1
= I
B2
=1.5mA
2N2894
Prelim. 4/99
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
ELECTRICAL CHARACTERISTICS
(TA = 25C unless otherwise stated)
BV
CEO(SUS)
Collector Base BreakdownVoltage
BV
CES
Collector Emitter Breakdown Voltage
BV
CBO
Collector Base Breakdown Voltage
BV
EBO
Emitter Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
CES
Collector Cut-off Current
I
B
Base Current
V
CE(sat)
Collector Emitter Saturation Voltage
V
BE(sat)
Base Emitter On Voltage
h
FE
DC Current Gain
f
T
Current Gain Bandwidth Product
C
ob
Output Capacitance
C
ib
Input Capacitance
t
on
Turn on Time
t
off
Turn off Time
* Pulse Test: t
p
300
m
s,
d
1%.