ChipFind - документация

Электронный компонент: 2N2857CSM

Скачать:  PDF   ZIP
2N2857CSM
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 7/95
LAB
SEME
HIGH FREQUENCY
NPN TRANSISTOR IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
SILICON NPN TRANSISTOR
HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)
CECC SCREENING OPTIONS
APPLICATIONS:
Hermetically sealed surface mount version
of the popular 2N2857 for high reliability
applications requiring small size and low
weight devices.
V
CBO
Collector Base Voltage
V
CEO
Collector Emitter Voltage
V
EBO
Emitter Base Voltage
I
C
Collector Current
P
D
Total Device Dissipation
@ T
A
=25C
Derate above 25C
P
D
Total Device Dissipation
@ T
C
=25C
Derate above 25C
T
STG
, T
J
Operating and Storage Temperature Range
30V
15V
2.5V
40mA
200mW
1.14mW / C
300mW
1.72mW / C
65 to +200C
MECHANICAL DATA
Dimensions in mm (inches)
SOT23 CERAMIC
(LCC1 PACKAGE)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25C unless otherwise stated)
PAD 1 Base
Underside View
PAD 2 Emitter
PAD 3 Collector
2
1
0.51 0.10
(0.02 0.004)
0.31
(0.012)
1.91 0.10
(0.075 0.004)
3.05 0.13
(0.12 0.005)
2.
54
0.
13
(
0
.
10
0.
005)
0.
76
0.
1
5
(
0
.
03
0.
00
6)
1.02 0.10
(0.04 0.004)
1.40
(0.055)
max.
A
0.31
(0.012)
rad.
rad.
A =
3
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
A
V
--
nA
dB
--
--
pF
dB
ps
30
15
2.5
50
1
0.4
0.5
1
30
10
100
4.5
50
220
10
21
1
12.5
21
4.0
15
I
C
= 1
A
I
E
= 0
I
C
= 3mA
I
B
= 0
I
E
= 10
A
I
C
= 0
V
CB
= 15V
I
E
= 0
T
A
= 55C
I
C
= 10mA
I
B
= 1mA
V
CE
= 1V
I
C
= 3mA
T
A
= 150C
V
CB
= 16V
I
B
= 0
V
CE
= 6V
I
C
= 1.5mA
f = 450MHz
R
G
= 50
V
CE
= 6V
I
C
= 2mA
V
CE
= 6V
I
C
= 5mA
f = 100MHz
V
CB
= 10V
I
E
= 0
f = 0.1 to 1 MHz
V
CE
= 6V
I
C
= 1.50mA
f = 450MHz
V
CE
= 6V
I
E
= 2mA
f = 31.9MHz
2N2857CSM
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 7/95
LAB
SEME
ELECTRICAL CHARACTERISTICS
(TA = 25C unless otherwise stated)
V
(BR)CBO*
Collector Base Breakdown Voltage
V
(BR)CEO
Collector Emitter Breakdown Voltage
V
(BR)EBO
Emitter Base Breakdown Voltage
I
CBO
Collector Base Cut-off Current
V
CE(sat)
Collector Emitter Saturation Voltage
V
BE(sat)
Base Emitter Saturation Voltage
h
FE
DC Current Gain
I
CES
Collector Emitter Cut-off Current
NF
Noise Figure
h
fe
Small Signal Current Gain
| h
fe
|
Magnitude of h
fe
C
cb
Collector Base Feedback
Capacitance
G
pe
Small Signal Power Gain
r
b
'C
c
Collector Base Time Constant