2N2484CSM
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 7/95
LAB
SEME
HIGH SPEED, MEDIUM POWER, NPN
GENERAL PURPOSE TRANSISTOR IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)
CECC SCREENING OPTIONS
APPLICATIONS:
Hermetically sealed surface mount version
of the popular 2N2484 for high reliability
applications requiring small size and low
weight devices.
V
CBO
Collector Base Voltage
V
CEO
Collector Emitter Voltage
V
EBO
Emitter Base Voltage
I
C
Collector Current
P
D
Total Device Dissipation
@ T
A
=25C
Derate above 25C
P
D
Total Device Dissipation
@ T
C
=25C
Derate above 25C
T
STG
, T
J
Operating and Storage Temperature Range
60V
60V
6V
50mA
360mW
2.06mW / C
1.2W
6.85mW / C
65 to +200C
MECHANICAL DATA
Dimensions in mm (inches)
SOT23 CERAMIC
(LCC1 PACKAGE)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25C unless otherwise stated)
PAD 1 Base
Underside View
PAD 2 Emitter
PAD 3 Collector
2
1
0.51 0.10
(0.02 0.004)
0.31
(0.012)
1.91 0.10
(0.075 0.004)
3.05 0.13
(0.12 0.005)
2.
54
0.
13
(
0
.
10
0.
005)
0.
76
0.
1
5
(
0
.
03
0.
00
6)
1.02 0.10
(0.04 0.004)
1.40
(0.055)
max.
A
0.31
(0.012)
rad.
rad.
A =
3
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
nA
V
--
MHz
pF
pF
k
x 10
-6
--
60
60
6
10
10
0.35
0.5
0.7
30
100
500
175
200
250
800
15
60
6
6
3.5
24
800
150
900
I
C
= 10
A
I
E
= 0
I
C
= 10mA
I
B
= 0
I
E
= 10
A
I
C
= 0
V
CB
= 45V
I
E
= 0
V
BE
= 5V
I
C
= 0
I
C
= 1mA
I
B
= 0.1mA
I
C
= 0.1mA
V
CE
= 5V
I
C
= 1
A
V
CE
= 5V
I
C
= 10
A
V
CE
= 5V
I
C
= 100
A
V
CE
= 5V
I
C
= 500
A
V
CE
= 5V
I
C
= 1mA
V
CE
= 5V
I
C
= 10mA
V
CE
= 5V
f = 5MHz
I
C
= 0.05mA
f = 30MHz
I
C
= 0.5mA
V
CB
= 5V
I
E
= 0
f = 140kHz
V
BE
= 0.5V
I
C
= 0
f = 140kHz
V
CE
= 5V
I
C
= 1mA
f = 1kHz
2N2484CSM
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 7/95
LAB
SEME
ELECTRICAL CHARACTERISTICS
(TA = 25C unless otherwise stated)
V
(BR)CBO*
Collector Base Breakdown Voltage
V
(BR)CEO
Collector Emitter Breakdown Voltage
V
(BR)EBO
Emitter Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
V
CE(sat)
Collector Emitter Saturation Voltage
V
BE(on)
Base Emitter On Voltage
h
FE
DC Current Gain
f
T
Current Gain Bandwidth Product
C
ob
Output Capacitance
C
ib
Input Capacitance
h
ie
Input Impedance
h
re
Voltage Feedback Ratio
h
fe
Small Signal Current Gain
* Pulse Test: t
p
300
s,
2%.
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