2SK2043LS
No.4285-1/4
Specifications
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
600
V
Gate-to-Source Voltage
VGSS
30
V
Drain Current (DC)
ID
2
A
Drain Current (Pulse)
IDP
8
A
Allowable Power Dissipation
PD
2.0
W
Tc=25
C
25
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
--55 to +150
C
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=10mA, VGS=0
600
V
Zero-Gate Voltage Drain Current
IDSS
VDS=480V, VGS=0
1.0
mA
Gate-to-Source Leakage Current
IGSS
VGS=
30V, VDS=0
100
nA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
2.0
3.0
V
(Note) Be careful in handling the 2SK2043LS because it has no protection diode between gate and source.
Continued on next page.
Marking : K2043
Features
Low ON-resistance.
Ultrahigh-speed switching.
High-speed diode (trr=100ns).
Micaless package facilitating mounting.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN4285B
2SK2043LS
Package Dimensions
unit : mm
2078C
[2SK2043LS]
N1501 TS IM TA-3431 / 71599 TH (KT) / 72597 TS (KOTO) / 51193 TH (KOTO) AX-9260
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
16.0
14.0
3.6
3.5
7.2
16.1
0.7
2.55
2.55
2.4
1.2
0.9
0.75
0.6
1.2
4.5
2.8
1 2 3
10.0
3.2
2SK2043LS
No.4285-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Forward Transfer Admittance
yfs
VDS=10V, ID=1A
0.8
1.5
S
Static Drain-to-Source On-State Resistance
RDS(on)
ID=1A, VGS=10V
3.2
4.3
Input Capacitance
Ciss
VDS=20V, f=1MHz
400
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
55
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
15
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
10
ns
Rise Time
tr
See specified Test Circuit.
12
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
65
ns
Fall Time
tf
See specified Test Circuit.
40
ns
Diode Forward Voltage
VSD
IS=2A, VGS=0
1.5
V
Diode Reverse Recovery Time
trr
IS=2A, di/dt=100A/
s
100
ns
Switching Time Test Circuit
ID -- VDS
Drain Current, I
D
--
A
Drain-to-Source Voltage, VDS -- V
ITR02363
ID -- VGS
Drain Current, I
D
--
A
Gate-to-Source Voltage, VGS -- V
ITR02364
0
0
5
4
3
2
1
20
4
8
12
16
0
0
2
4
6
8
10
12
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
14
3.5V
6.0V
V GS
=10.0A
4.5V
5.0V
5.5V
VDS=10V
4.0V
25
C
Tc= --25
C
75
C
Drain Current, ID -- A
y
fs
-- ID
F
orw
ard T
ransfer
Admittance,
y
fs
-
-
S
ITR02365
0.1
2
3
5
7
1.0
2
3
5
5
0.1
1.0
7
2
3
5
7
2
3
5
5
7
VDS=10V
Tc= -
-25
C
75
C
25
C
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
Static Drain-to-Source
On-State Resistance, R
DS
(on)
--
ITR02366
0
2
4
6
8
10
12
14
0
7
6
5
4
3
2
1
Tc=25
C
ID=2.0A
1.0A
0.5A
PW=1
s
D.C.
0.5%
10V
0V
VIN
P.G
50
G
D
ID=1A
RL=200
VDD=200V
VOUT
2SK2043LS
VIN
S
2SK2043LS
No.4285-3/4
Static Drain-to-Source
On-State Resistance, R
DS
(on)
--
0
--60
5
4
3
2
1
Case Temperature, Tc --
C
VGS(off) -- Tc
Cutof
f V
oltage, V
GS
(of
f)
--
V
ITR02369
--40
--20
0
20
40
60
80
100
120
140
160
VDS=10V
ID=1mA
0
0.2
0.4
0.6
0.8
1.0
1.2
Diode Forward Voltage, VSD -- V
IS -- VSD
Source Current, I
S
--
A
ITR02370
1.4
7
5
3
2
2
2
3
0.1
5
7
2
3
5
7
10
1.0
25
C
Tc=75
C
--25
C
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- VDS
Ciss, Coss, Crss -
-
pF
ITR02371
0
4
8
12
16
20
24
28
32
5
100
10
1000
7
5
3
2
7
5
3
2
7
2
VGS=0
f=1MHz
Ciss
Coss
Crss
Drain Current, ID -- A
SW Time -- ID
ITR02372
Switching
T
ime, SW
T
ime -
-
ns
5
5
2
3
1.0
0.1
100
10
7
2
3
5
7
2
3
2
7
5
3
2
7
5
3
tf
td(off)
tr
VDD=200V
VGS=10V
P.W.=1
s
D.C.
0.5%
td(on)
Drain-to-Source Voltage, VDS -- V
A S O
Drain Current, I
D
--
A
ITR02373
2
2
2
10
100
1.0
3
5
7
2
3
5
7
2
3
7
5
10
7
5
3
2
7
5
3
2
0.1
7
5
3
1000
Tc=25
C
Single pulse
10
s
100
s
1ms
10ms
100ms
DC operation
<5
s
IDP=8A
ID=2A
Ambient Temperature, Ta --
C
PD -- Ta
Allo
w
able Po
wer Dissipation, P
D
--
W
ITR02374
2.4
2.0
1.6
1.2
0.8
0.4
0
20
40
60
80
100
120
140
160
0
No heat sink
Case Temperature, Tc --
C
RDS(on) -- Tc
ITR02367
--60
--40
--20
0
20
40
60
80
100
120
140
160
0
7
6
5
4
3
2
1
I D
=1A, V
GS
=10V
I D
=1A, V
GS
=20V
0
--60
5
4
3
2
1
Case Temperature, Tc --
C
ID -- Tc
Drain Current, I
D
--
A
ITR02368
--40
--20
0
20
40
60
80
100
120
140
160
VDS=10V
VGS=10V
Operation in this
area is limited by RDS(on).
2SK2043LS
No.4285-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2001. Specifications and information herein are subject
to change without notice.
PS
Allo
w
able Po
wer Dissipation, P
D
--
W
ITR02375
Case Temperature, Tc --
C
PD -- Tc
0
20
40
60
80
100
120
140
160
0
28
24
20
16
12
8
4
25
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