2SA2063 / 2SC5775
No.6988-1/4
Features
Large current capacitance.
Wide ASO and high durability against breakdown.
Adoption of MBIT process.
Specifications
Note*( ) : 2SA2063
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(-)180
V
Collector-to-Emitter Voltage
VCEO
(-)160
V
Emitter-to-Base Voltage
VEBO
(-)6
V
Collector Current
IC
(-)12
A
Collector Current (Pulse)
ICP
(-)24
A
Collector Dissipation
PC
2.5
W
Tc=25
C
130
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55 to +150
C
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)180V, IE=0
(--)0.1
mA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0
(--)0.1
mA
DC Current Gain
hFE(1)
VCE=(--)5V, IC=(--)1A
60
160
hFE(2)
VCE=(--)5V, IC=(--)6A
35
Gain-Bandwidth Product
fT
VCE=(--)5V, IC=(--)1A
(10)15
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(340)170
pF
Base-to-Emitter Voltage
VBE
VCE=(--)5V, IC=(--)6A
1.5
V
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)6A, IB=(--)0.6A
(--0.3)0.2
(--)2.0
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)5mA, IE=0
(--)180
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)50mA, RBE=
(--)160
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)5mA, IC=0
(--)6
V
Turn-On Time
ton
See specified test circuit.
(0.45)0.56
s
Storage Time
tstg
See specified test circuit.
(1.75)3.3
s
Fall Time
tf
See specified test circuit.
(0.25)0.4
s
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6988A
D1503 TS IM TA-100928 / 62501 TS IM TA-3319, 3320
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
2SA2063 / 2SC5775
PNP Epitaxial Planar Silicon Transistor
NPN Triple Diffused Planar Silicon Transistor
160V / 12A, AF90W
Output Applications
2SA2063 / 2SC5775
No.6988-2/4
Package Dimensions
Switching Time Test Circuit
unit : mm
2022A
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
15.6
2.6
3.5
1.2
14.0
1.6
1.0
2.0
0.6
20.0
20.0
15.0
1.3
3.2
4.8
2.0
0.6
5.45
5.45
1.4
1
2
3
VR
RB
VCC=50V
VBE= --5V
+
+
50
INPUT
OUTPUT
RL=
8.33
100
F
470
F
PW=20
s
IB1
D.C
1%
IB2
IC=10IB1= --10IB2=6A
For PNP, the polarity is reversed.
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, I
C
-
-
A
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, I
C
-
-
A
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector Current, I
C
-
-
A
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector Current, I
C
-
-
A
2
4
6
8
10
12
14
16
18
20
0
1
2
3
4
5
6
7
8
9
10
IT03391
0
0
--2
--4
--6
--8
--10
--12
--14
--16
0
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
2SA2063
2SC5775
IT03392
0
--0.5
--1.0
--1.5
IT03393
0
--2
--4
--6
--8
--10
--12
2SA2063
VCE= --5V
Ta=120
C
25
C
--40
C
IT03394
2SC5775
VCE=5V
0
0.5
1.0
1.5
0
2
4
6
8
10
12
T
a=120
C
25
C
--40
C
--500mA
--400mA
--300mA
--200mA
--100mA
--40mA
--20mA
IB=0
500mA
400mA
300mA
200mA
100mA
20mA
40mA
IB=0
2SA2063 / 2SC5775
No.6988-3/4
Collector Dissipation, P
C
--
W
Ambient Temperature, Ta --
C
PC -- Ta
Collector Dissipation, P
C
--
W
Case Temperature, Tc --
C
PC -- Tc
A S O
Collector Current, I
C
-
-
A
Collector-to-Emitter Voltage, VCE -- V
VCE(sat) -- IC
Collector Current, IC -- A
Collector
-to-Emitter
Saturation V
oltage, V
CE
(sat) -
-
V
VCE(sat) -- IC
Collector Current, IC -- A
Collector
-to-Emitter
Saturation V
oltage, V
CE
(sat) -
-
V
hFE -- IC
Collector Current, IC -- A
DC Current Gain, h
FE
hFE -- IC
Collector Current, IC -- A
DC Current Gain, h
FE
1.0
10
2
3
5
7
100
2
3
5
7
2
3
0.01
2
10
2
3
5
1.0
2
3
5
7
0.1
2
3
5
7
3
5
7
--0.01
--0.1
2
3
5
7
--1.0
2
3
5
7
--10
2
3
5
7
--0.01
2
3
5
7
--0.1
2
3
5
7
--1.0
0.01
0.1
2
3
5
7
1.0
2
3
5
7
10
2
3
5
7
0.01
2
3
5
7
0.1
2
3
5
7
1.0
Ta=120
C
--40
C
25
C
IT03397
2SA2063
IC / IB=10
Ta=120
C
--40
C
IT03398
2SC5775
IC / IB=10
0
0.5
1.0
1.5
2.0
2.5
3.0
20
0
60
40
80
100
140
120
160
IT03400
0
140
130
120
100
60
80
40
20
20
0
60
40
80
100
140
120
160
IT03401
ICP=24A
10ms
100ms
DC operation
1ms
IC=12A
IT03399
2SA2063 / 2SC5775
2SA2063 / 2SC5775
2SA2063 / 2SC5775
P
C =130W
25
C
0.01
0.1
2
3
5
7
1.0
2
3
5
7
10
2
3
5
7
2
10
3
5
7
100
2
3
25
C
--40
C
--0.01
--0.1
2
3
5
7
--1.0
2
3
5
7
--10
2
3
5
7
10
2
3
5
7
100
2
3
IT03395
25
C
--40
C
IT03396
2SA2063
VCE= --5V
2SC5775
VCE=5V
Ta=120
C
Ta=120
C
Tc=25
C
Single pulse
(For PNP, minus sign is omitted.)
No heat sink
2SA2063 / 2SC5775
No.6988-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 2003. Specifications and information herein are subject
to change without notice.
PS
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