40
GAE75BA60
IGBT MODULE
SanRex IGBT Module GAE75BA60 is designed for high speed, high current switching
applications. This Module is electrically isolated and contains IGBT connected with
clamp diode in series, soft recovery diode (trr=0.1
s) reverse connected across IGBT.
I
C
75A
V
CES
600V
V
CES sat
2.4V Typ
t f
0.10 s Typ
Soft recovery diode
Applications
Brake for motor control (VVVF)
Unit
mm
Maximum Ratings
Unless otherwise Tj
25
Symbol
Item
V
CES
Collector-Emitter Voltage
Conditions
with gate terminal shorted to emitter
Ratings
GAE75BA60
Unit
V
600
V
GES
Gate-Emitter Voltage
with collector shorted to emitter
V
20
Ic
Collector
Current
DC
Pulse
ms
A
75
I
CP
150
Ic
Reverse Collector Current
A
75
P
T
Total Power Dissipation
Tc
25
W
315
Tj
Junction Temperature
150
Tstg
Storage Temperature
40
125
V
ISO
Isolation Voltage
R.M.S.
A.C.
minute
V
2500
Mounting
Torque
Mounting
6
Terminal
5
Recommended Value 2.5
3.9
25
40
N m
kgf cm
4.7
48
Recommended Value 1.5
2.5
15
25
2.7
28
Mass
Typical Value
g
210
Electrical Characteristics
Symbol
Item
I
GES
Gate Leakage Current
Conditions
V
GE
20V
V
CE
0V
Ratings
Min.
Typ.
Max.
Unit
nA
500
I
CES
Collector Cut-Off Current
V
CE
600V
V
GE
0V
mA
1.0
0
V
BR CES
Collector-Emitter Breakdown Voltage
V
GE
0V
Ic
mA
V
600
V
GE th
Gate Threshold Voltage
V
CE
10V
Ic
7.5mA
V
3.0
2.4
0
7.0
0
V
CE sat
Collector-Emitter Saturation Voltage
Ic
75A
V
GE
15V
V
4
.00
2.8
0
Cies
Input Capacitance
V
CE
10V
V
GE
0V
f
1MHz
nF
0.10
7.5
0
tr
Switching
Time
Rise Time
Turn-on Delay Time
Fall Time
Turn-off Delay Time
Ic
75A
V
GE
15V/
5V
Vcc
300V
R
G
8
s
0.20
0.20
td on
0.10
0.40
tf
Emitter-Collector Voltage
0.40
0.20
td off
1.80
0.80
V
ECS
Ic
75A
V
GE
0V
V
0.1
0
2.80
trr
Reverse Recovery Time
Ic
75A
V
GE
10V
d i / dt
150A/ s
s
0.15
1.80
V
FM
Forward Voltage Drop
IF
75A, Clamp Diode
2.80
0.1
0
trr
Reverse Recovery Time
IF
75A d i F/ dt
150A/ s, Clamp Diode
0.15
Rth j-c
Thermal Impedance
Clamp Diode
0.55
Rth j-c
Thermal Resistance
IGBT-Case
/W
V
s
/W
0.40
Diode-Case
0.55
UL;E76102 M
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