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Электронный компонент: DKR200AB60

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.
-
-M
depth mm
MAX
-
MARKING AREA
Tc point depth 2mm
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
DKR200AB60
DIODE MODULE
NON-ISOLATED TYPE
DKR200AB60 is a high speed (fast recovery) dual diode module designed for high
power switching application. DKR200AB60 is suitable for high frequency application
requiring low loss and high speed control.
High Speed Diode t
rr
200ns
IF
(AV)
=100A
each device
High Surge Capability
Applications
Switching Power Supply, Inverter Welding Power Supply
Power Supply for Telecommunication
Maximum Ratings
Tj25 unless otherwise specified
Symbol
Item
Ratings
DKR200AB60
Unit
V
RRM
V
R
DC
Repetitive peak reverse Voltage
D.C. Reverse Voltage
600
480
V
V
Unit
K
A
A
Electrical Characteristics
Symbol
Item
Forward
Current
Condition
Ratings
Unit
A
I
F
D.C. T
C
133
200
100
I
FSM
Surge Forward Current
1
2
cycle, 60H
Z
, Peak value. non-repetitive
3600
1
2
cycle, 50H
Z
, Peak value. non-repetitive
3200
A
I
2
t
I
2
t (for fusing)
Value for one cycle surge current
54000
A
2
S
Tj
Operating Junction Temperature
-40 to 150
Tstg
Storage Temperature
-40 to 125
Mounting
Torque
Mounting
M6
Per leg
Per module
Mass
Recommended Value 25-40
Recommended Value 2.5-3.9
48
4.7
Mounting
M4
Recommended Value 10-14
15
Terminal
M6
Recommended Value 1.0-1.4
Recommended Value 25-40
Recommended Value 2.5-3.9
1.5
fB
Nm
fB
Nm
fB
Nm
g
Typical Value
48
4.7
80
Symbol
I
RRM
Item
Repetitive Peak Reverse Current
Condition
Tj
125, V
D
=V
RRM
Unit
mA
V
FM
Forward Voltage Drop
I
F
200A, Inst.measurement
V
Rthj-c Thermal Impedance
Junction to case,
1
2
module
/W
trr
Reverse Recovery Time
I
F
200Adi/dt200A/s
ns
Ratings
Min.
Typ.
100
Max.
200
1.4
200
0.063
SanRex
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
DKR200AB60
Forward Characteristics
Forward Voltage Drop V
F
V
Forward Current I
F
A
Max
=
Reverse Recovery Characteristics
Forward Current I
F
A
Reverse Recovery Time trr
n
s
Reverse Recovery Charge Qrr
C
Reverse Recovery Current



-di/dt=200[A/s]
Trr
Trr
Irr
Irr
Qrr
Qrr
=
=
4
3
3
2
Time
t
sec.
Transient Thermal Impedance
Transient Thermal Impedance
/
W
Max.
Junction to Case
1.0E
1.0E
1.0E
1.0E
1.0E
1.0E
1.0E
1.0E
1.0E
1.0E
1.0E
1.0E
1.0E
1.0E
Reverse Recovery Characteristics
Critical rate of rise of on-state current di/dtA/s
I
F
=00[A]
Trr
Trr
Irr
Irr
Qrr
Qrr
=
=
Reverse Recovery Time trr
n
s
Reverse Recovery Charge Qrr
C
Reverse Recovery Current