104
Silicon NPN Triple Diffused Planar Transistor
(High Voltage and High Speed Switchihg Transistor)
Application : Switching Regulator, Lighting Inverter, and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4434
500
400
10
15(
Pulse
30)
5
120(Tc=25C)
150
55 to +150
Unit
V
V
V
A
A
W
C
C
s
Absolute maximum ratings
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SC4434
100
max
100
max
400
min
10 to 25
0.7
max
1.3
max
10
typ
135
typ
Unit
A
A
V
V
V
MHz
pF
Conditions
V
CB
=500V
V
EB
=10V
I
C
=25mA
V
CE
=4V, I
C
=8A
I
C
=8A, I
B
=1.6A
I
C
=8A, I
B
=1.6A
V
CE
=12V, I
E
=1.5A
V
CB
=10V, f=1MHz
2SC4434
(Ta=25C)
(Ta=25C)
I
C
V
C E
Characteristics (Typical)
h
F E
I
C
Temperature Characteristics (Typical)
t
o n
t
s t g
t
f
I
C
Characteristics (Typical)
j - a
t
Characteristics
I
C
V
B E
Temperature
Characteristics (Typical)
V
CE
(sat),V
BE
(sat)I
C
Temperature Characteristics (Typical)
P c T a Derating
Reverse Bias Safe Operating Area
Safe Operating Area (Single Pulse)
0
0
2
4
6
8
1 0
2
1
3
4
C o l l e c t o r - E m i t t e r V o l t a g e V
C E
( V )
Collector Current I
C
(A)
1 A
6 0 0 m A
4 0 0 m A
2 0 0 m A
1.2A
I
B
= 1 0 0 m A
0 . 1
0 . 0 5
1
5
1 0
0 . 5
0
1
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
Base-Emitter Saturation Voltage V
BE(sat)
(V)
C o l l e c t o r - E m i t t e r V o l t a g e V
C E
( V )
( I
C
/ I
B
= 5 )
C o l l e c t o r C u r r e n t I
C
( A )
V
B E
( s a t )
150C (Case Temp)
25C (Case Temp)
75C (Case Temp)
75C
25C
V
C E
( s a t )
15
0
C
(C
a
se
T
e
m
p
)
0
1 5
1 4
1 2
1 0
8
6
4
2
0
1 . 0
0 . 5
B a s e - E m i t t o r V o l t a g e V
B E
( V )
Collector Current I
C
(A)
( V
C E
= 4 V )
150C (Case Temp)
75C (Case Temp)
25C (Case Temp)
0 . 0 5
1
0 . 5
0 . 1
1 0 1 5
5
5
1 0
5 0
C o l l e c t o r C u r r e n t I
C
( A )
DC Current Gain h
FE
( V
C E
= 4 V )
1 5 0 C
7 5 C
2 5 C
1
0 . 5
1 0
1 5
5
0.05
0 . 1
0 . 5
5
1
Switching Time
t
on
t
stg
t
f
(
s)
C o l l e c t o r C u r r e n t I
C
( A )
t
s t g
t
o n
t
f
V
C C
2 0 0 V
I
C
: I
B 1
: I
B 2
= 5 : 1 : 2
0 . 1
1
2
0 . 5
1
1 0
1 0 0
1 0 0 0
T i m e t ( m s )
Transient Thermal Resistance
j-a
(C/W)
1 2 0
1 0 0
5 0
3 . 5
0
0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
A m b i e n t T e m p e r a t u r e T a ( C )
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
W i t h o u t H e a t s i n k
1 0
5 0
5
5 0 0
1 0 0
1
0 . 5
0 . 1
1 0
4 0
5
Collector Current I
C
(A)
Without Heatsink
Natural Cooling
L=3mH
I
B2
=1A
Duty:less than 1%
1 0
5 0
5
1 0 0
5 0 0
1
0 . 5
0 . 1
1 0
4 0
5
C o l l e c t o r - E m i t t e r V o l t a g e V
C E
( V )
Collector Current I
C
(A)
100
s
Without Heatsink
Natural Cooling
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
R
L
(
)
25
I
C
(A)
8
V
BB2
(V)
5
I
B2
(A)
3.2
t
on
(
s)
0.5
max
t
stg
(
s)
2.0
max
t
f
(
s)
0.15
max
I
B1
(A)
1.6
V
BB1
(V)
10
External Dimensions MT-100(TO3P)
15.6
0.4
9.6
19.9
0.3
4.0
2.0
5.0
0.2
1.8
3.2
0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
B
E
5.45
0.1
5.45
0.1
C
4.8
0.2
0.65
+0.2
-0.1
1.4
2.0
0.1
a
b
Weight : Approx 6.0g
a. Type No.
b. Lot No.
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