Direct RDRAM

K4R571669D/K4R881869D

Page 1

Version 1.4 July 2002

Overview

The RDRAM

device is a general purpose high-perfor-

mance memory device suitable for use in a broad range of

applications including computer memory, graphics, video,

and any other application where high bandwidth and low

latency are required.

The 256/288-Mbit RDRAM devices are extremely high-

speed CMOS DRAMs organized as 16M words by 16 or 18

bits. The use of Rambus Signaling Level (RSL) technology

permits up to 1066 MHz transfer rates while using conven-

tional system and board design technologies. RDRAM

devices are capable of sustained data transfers up to 0.938ns

per two bytes (7.5ns per sixteen bytes).

The architecture of RDRAM devices allows the highest

sustained bandwidth for multiple, simultaneous randomly

addressed memory transactions. The separate control and

data buses with independent row and column control yield

over 95% bus efficiency. The RDRAM device's 32 banks

support up to four simultaneous transactions.

System oriented features for mobile, graphics and large

memory systems include power management, byte masking,

and x18 organization. The two data bits in the x18 organiza-

tion are general and can be used for additional storage and

bandwidth or for error correction.

Features

Highest sustained bandwidth per DRAM device

- 2.1GB/s sustained data transfer rate

- Separate control and data buses for maximized

efficiency

- Separate row and column control buses for

easy scheduling and highest performance

- 32 banks: four transactions can take place simul-

taneously at full bandwidth data rates

Low latency features

- Write buffer to reduce read latency

- 3 precharge mechanisms for controller flexibility

- Interleaved transactions

Advanced power management:

- Multiple low power states allows flexibility in power

consumption versus time to transition to active state

- Power-down self-refresh

Organization: 2kbyte pages and 32 banks, x 16/18

- x18 organization allows ECC configurations or

increased storage/bandwidth

- x16 organization for low cost applications

Uses Rambus Signaling Level (RSL) for up to 1066MHz

operation

The 256/288-Mbit RDRAM devices are offered in a CSP
horizontal package suitable for desktop as well as low-
profile add-in card and mobile applications.

Key Timing Parameters/Part Numbers

32s

- 32 banks which use a

split

bank architecture.

- WBGA package.

- RDRAM core uses normal power self refresh.

Figure 1: Direct RDRAM CSP Package

Organization

Speed

Part Number

Bin

I/O

Freq.

MHz

RAC

(Row

Access

Time) ns

512Kx16x32s

-CT9

1066

32P

K4R571669D-F

-CN9

1066

K4R571669D-FCN9

-CM9

1066

K4R571669D-FCM9

-CM8

800

K4R571669D-FCM8

-CK8

800

K4R571669D-FCK8

512Kx18x32s

-CT9

1066

32P

K4R881869D-FCT9

-CN9

1066

K4R881869D-FCN9

-CM9

1066

K4R881869D-FCM9

-CM8

800

K4R881869D-FCM8

-CK8

800

K4R881869D-FCK8

K4RXXXX69D-

xxx

SAMSUNG 230

Direct RDRAM

K4R571669D/K4R881869D

Page 2

Version 1.4 July 2002

COL

ROW

Pinouts and Definitions

Center-Bonded Devices

These tables shows the pin assignments of the center-bonded
RDRAM package. The mechanical dimensions of this

package are shown in a later section. Refer to Section

Center-Bonded WBGA Package

on page 18. Note - pin #1

is at the A1 position.

Table 1: Center-Bonded Device (top view)

GND

CMD

GND

GNDa

GND

CMOS

GND

DQA8

DQA7

DQA5

DQA3

DQA1

CTMN

CTM

RQ7

RQ5

RQ3

RQ1

DQB1

DQB3

DQB5

DQB7

DQB8

GND

DQA6

DQA4

DQA2

DQA0

CFM

CFMN

RQ6

RQ4

RQ2

RQ0

DQB0

DQB2

DQB4

DQB6

GND

SCK

CMOS

GND

DDa

REF

GND

SIO0

SIO1

GND

Chip

Top View

The pin #1(ROW 1, COL A) is located at the
A1 position on the top side and the A1 position
is marked by the marker

K4RXXXX69D-

xxx

SAMSUNG 230

Direct RDRAM

K4R571669D/K4R881869D

Page 3

Version 1.4 July 2002

Table 2: Pin Description

Signal

I/O

Type

# Pins
center

Description

SIO1,SIO0

I/O

CMOS

Serial input/output. Pins for reading from and writing to the control regis-
ters using a serial access protocol. Also used for power management.

CMD

CMOS

Command input. Pins used in conjunction with SIO0 and SIO1 for reading
from and writing to the control registers. Also used for power manage-
ment.

SCK

CMOS

Serial clock input. Clock source used for reading from and writing to the
control registers

Supply voltage for the RDRAM core and interface logic.

DDa

Supply voltage for the RDRAM analog circuitry.

CMOS

Supply voltage for CMOS input/output pins.

GND

Ground reference for RDRAM core and interface.

GNDa

Ground reference for RDRAM analog circuitry.

DQA8..DQA0

I/O

RSL

Data byte A. Nine pins which carry a byte of read or write data between
the Channel and the RDRAM device. DQA8 is not used (no connection)
by RDRAM device with a x16 organization.

CFM

RSL

Clock from master. Interface clock used for receiving RSL signals from
the Channel. Positive polarity.

CFMN

RSL

Clock from master. Interface clock used for receiving RSL signals from
the Channel. Negative polarity

REF

Logic threshold reference voltage for RSL signals

CTMN

RSL

Clock to master. Interface clock used for transmitting RSL signals to the
Channel. Negative polarity.

CTM

RSL

Clock to master. Interface clock used for transmitting RSL signals to the
Channel. Positive polarity.

RQ7..RQ5 or
ROW2..ROW0

RSL

Row access control. Three pins containing control and address informa-
tion for row accesses.

RQ4..RQ0 or
COL4..COL0

RSL

Column access control. Five pins containing control and address informa-
tion for column accesses.

DQB8..
DQB0

I/O

RSL

Data byte B. Nine pins which carry a byte of read or write data between
the Channel and the RDRAM device. DQB8 is not used (no connection)
by RDRAM device with a x16 organization.

Total pin count per package

a. All CMOS signals are high-true; a high voltage is a logic one and a low voltage is logic zero.
b. All RSL signals are low-true; a low voltage is a logic one and a high voltage is logic zero.

Direct RDRAM

K4R571669D/K4R881869D

Page 4

Version 1.4 July 2002

Figure 2: 256/288-Mbit (512Kx16/18x32s) RDRAM Device Block Diagram

Bank 31

DQA8..DQA0

1:8 De

mux

1 M

r
i
t
e
B

ffer

1:8
D

mux

r
ite Buffer

Bank 30

Bank 29

Bank 18

Bank 17

Bank 16

Bank 15

Bank 14

Bank 13

Bank 1

Bank 0

SAmp

1/2

DQB8..DQB0

1:8 Demux

Packet Decode

ROW2..ROW0

COL4..COL0

CTM CTMN

CFM CFMN

SCK,CMD

RCLK

TCLK

Control Registers

COP

XOP

ROP

Write

Buffer

Match

Mux

Match

DEVID

512x128x144

Internal DQB Data Path

Column Decode & Mask

REFR

Row Decode

Mux

ACT

RD, WR

Power Modes

DRAM Core

Mux

XOP Decode

PREX

PREC

PRER

COLX

COLC

COLM

SIO0,SIO1

Sense Amp

Internal DQA Data Path

Packet Decode

ROWA

ROWR

RCLK

RC
LK

TC
LK

RQ7..RQ5 or

RQ4..RQ0 or

SAmp

0/1

SAmp

SA
mp

14/15

SAmp

13/14

SAmp

16/17

SAmp

17/18

SAmp

29/30

SAmp

30/31

SAmp

64x72

SAmp

1/2

SAmp

0/1

SAmp

SAm

14/15

SAmp

/
1
4

16/17

SAmp

17/18

SAmp

29/30

SAmp

30/31

SAmp

64x72

Bank 2

��

��

�

��

�

Direct RDRAM

K4R571669D/K4R881869D

Page 5

Version 1.4 July 2002

General Description

Figure 2 is a block diagram of the 256/288-Mbit RDRAM
device. It consists of two major blocks: a

core

block built

from banks and sense amps similar to those found in other
types of DRAM, and a Direct Rambus

interface block

which permits an external controller to access this core at up
to 2.1GB/s.

Control Registers:

The CMD, SCK, SIO0, and SIO1

pins appear in the upper center of Figure 2. They are used to
write and read a block of control registers. These registers
supply the RDRAM configuration information to a
controller and they select the operating modes of the device.
The REFR value is used for tracking the last refreshed row.
Most importantly, the five bit DEVID specifies the device
address of the RDRAM device on the Channel.

Clocking:

The CTM and CTMN pins (Clock-To-Master)

generate TCLK (Transmit Clock), the internal clock used to
transmit read data. The CFM and CFMN pins (Clock-From-
Master) generate RCLK (Receive Clock), the internal clock
signal used to receive write data and to receive the ROW and
COL pins.

DQA,DQB Pins:

These 16/18 pins carry read (Q) and

write (D) data across the Channel. They are multiplexed/de-
multiplexed from/to two 64/72-bit data paths (running at
one-eighth the data frequency) inside the RDRAM.

Banks:

The 32Mbyte core of the RDRAM device is

divided into thirty two 1Mbyte banks, each organized as 512
rows, with each row containing 128 dualocts, and each
dualoct containing 16/18 bytes. A dualoct is the smallest unit
of data that can be addressed.

Sense Amps:

The RDRAM device contains 34 sense

amps. Each sense amp consists of 1kbyte of fast storage (512
bytes for DQA and 512 bytes for DQB) and can hold one-
half of one row of one bank of the RDRAM device. The
sense amp may hold any of the 1024 half-rows of an associ-
ated bank. However, each sense amp is shared between two
adjacent banks of the RDRAM device (except for sense
amps 0, 15, 16, and 31). This introduces the restriction that
adjacent banks may not be simultaneously accessed.

RQ Pins:

These pins carry control and address informa-

tion. They are broken into two groups. RQ7..RQ5 are also
called ROW2..ROW0, and are used primarily for controlling
row accesses. RQ4..RQ0 are also called COL4..COL0, and
are used primarily for controlling column accesses.

ROW Pins:

The principle use of these three pins is to

manage the transfer of data between the banks and the sense

amps of the RDRAM device. These pins are de-multiplexed
into a 24-bit ROWA (row-activate) or ROWR (row-opera-
tion) packet.

COL Pins:

The principle use of these five pins is to

manage the transfer of data between the DQA/DQB pins and
the sense amps of the RDRAM device. These pins are de-
multiplexed into a 23-bit COLC (column-operation) packet
and either a 17-bit COLM (mask) packet or a 17-bit COLX
(extended-operation) packet.

ACT Command:

An ACT (activate) command from an

ROWA packet causes one of the 512 rows of the selected
bank to be loaded to its associated sense amps (two 512
bytes sense amps for DQA and two for DQB).

PRER Command:

A PRER (precharge) command from

an ROWR packet causes the selected bank to release its two
associated sense amps, permitting a different row in that
bank to be activated, or permitting adjacent banks to be acti-
vated.

RD Command:

The RD (read) command causes one of

the 128 dualocts of one of the sense amps to be transmitted
on the DQA/DQB pins of the Channel.

WR Command:

The WR (write) command causes a

dualoct received from the DQA/DQB data pins of the
Channel to be loaded into the write buffer. There is also
space in the write buffer for the BC bank address and C
column address information. The data in the write buffer is
automatically retired (written with optional bytemask) to one
of the 128 dualocts of one of the sense amps during a subse-
quent COP command. A retire can take place during a RD,
WR, or NOCOP to another device, or during a WR or
NOCOP to the same device. The write buffer will not retire
during a RD to the same device. The write buffer reduces the
delay needed for the internal DQA/DQB data path turn-
around.

PREC Precharge:

The PREC, RDA and WRA

commands are similar to NOCOP, RD and WR, except that a
precharge operation is performed at the end of the column
operation. These commands provide a second mechanism
for performing precharge.

PREX Precharge:

After a RD command, or after a WR

command with no byte masking (M=0), a COLX packet may
be used to specify an extended operation (XOP). The most
important XOP command is PREX. This command provides
a third mechanism for performing precharge.

Direct RDRAM

K4R571669D/K4R881869D

Page 6

Version 1.4 July 2002

Packet Format

Figure 3 shows the formats of the ROWA and ROWR
packets on the ROW pins. Table 3 describes the fields which
comprise these packets. DR4T and DR4F bits are encoded to
contain both the DR4 device address bit and a framing bit
which allows the ROWA or ROWR packet to be recognized
by the RDRAM device.

The AV (ROWA/ROWR packet selection) bit distinguishes
between the two packet types. Both the ROWA and ROWR
packet provide a five bit device address and a five bit bank
address. An ROWA packet uses the remaining bits to specify
a nine bit row address, and the ROWR packet uses the
remaining bits for an eleven bit opcode field. Note the use of
the

RsvX

notation to reserve bits for future address field

extension.

Figure 3 also shows the formats of the COLC, COLM, and
COLX packets on the COL pins. Table 4 describes the fields
which comprise these packets.

The COLC packet uses the S (Start) bit for framing. A
COLM or COLX packet is aligned with this COLC packet,
and is also framed by the S bit.

The 23 bit COLC packet has a five bit device address, a five
bit bank address, a seven bit column address, and a four bit
opcode. The COLC packet specifies a read or write
command, as well as some power management commands.

The remaining 17 bits are interpreted as a COLM (M=1) or
COLX (M=0) packet. A COLM packet is used for a COLC
write command which needs bytemask control. The COLM
packet is associated with the COLC packet from at least t

RTR

earlier. A COLX packet may be used to specify an indepen-
dent precharge command. It contains a five bit device
address, a five bit bank address, and a five bit opcode. The
COLX packet may also be used to specify some house-
keeping and power management commands. The COLX
packet is framed within a COLC packet but is not otherwise
associated with any other packet.

Table 3: Field Description for ROWA Packet and ROWR Packet

Field

Description

DR4T,DR4F

Bits for framing (recognizing) a ROWA or ROWR packet. Also encodes highest device address bit.

DR3..DR0

Device address for ROWA or ROWR packet.

BR4..BR0

Bank address for ROWA or ROWR packet. RsvB denotes bits ignored by the

RDRAM device

Selects between ROWA packet (AV=1) and ROWR packet (AV=0).

R8..R0

Row address for ROWA packet. RsvR denotes bits ignored by the

RDRAM device

ROP10..ROP0

Opcode field for ROWR packet. Specifies precharge, refresh, and power management functions.

Table 4: Field Description for COLC Packet, COLM Packet, and COLX Packet

Field

Description

Bit for framing (recognizing) a COLC packet, and indirectly for framing COLM and COLX packets.

DC4..DC0

Device address for COLC packet.

BC4..BC0

Bank address for COLC packet. RsvB denotes bits reserved for future extension (controller drives 0 ' s).

C6..C0

Column address for COLC packet. RsvC denotes bits ignored by the

RDRAM device

COP3..COP0

Opcode field for COLC packet. Specifies read, write, precharge, and power management functions.

Selects between COLM packet (M=1) and COLX packet (M=0).

MA7..MA0

Bytemask write control bits. 1=write, 0=no-write. MA0 controls the earliest byte on DQA8..0.

MB7..MB0

Bytemask write control bits. 1=write, 0=no-write. MB0 controls the earliest byte on DQB8..0.

DX4..DX0

Device address for COLX packet.

BX4..BX0

Bank address for COLX packet. RsvB denotes bits reserved for future extension (controller drives 0' s).

XOP4..XOP0

Opcode field for COLX packet. Specifies precharge, I

control, and power management functions.

Direct RDRAM

K4R571669D/K4R881869D

Page 7

Version 1.4 July 2002

Figure 3: Packet Formats

CTM/CFM

COL4

COL3

COL2

COL1

COL0

S=1

MA7 MA5 MA3 MA1

M=1 MA6 MA4 MA2 MA0

MB7 MB4 MB1

MB6 MB3 MB0

MB5 MB2

CTM/CFM

ROW2

DR4T DR2 BR0 BR3 RsvR R8

ROW1

DR4F DR1 BR1 BR4 RsvR R7

ROW0

DR3 DR0 BR2 RsvB AV=1 R6

ACT a0

PREX d0

MSK (b1)

PRER c0

WR b1

CTM/CFM

COL4

DC4 S=1

COL3

DC3

COL2

DC2 COP1

RsvB BC2

DC1 COP0

BC4 BC1

DC0 COP2

COP3 BC3 BC0

COL1

COL0

CTM/CFM

ROW2

ROW1

ROW0

CTM/CFM

COL4

COL3

COL2

COL1

COL0

ROP2

DR4T DR2 BR0 BR3

ROP10

ROP8 ROP5

DR4F DR1 BR1 BR4 ROP9 ROP7 ROP4 ROP1

DR3 DR0 BR2 RsvB AV=0 ROP6 ROP3 ROP0

S=1

DX4 XOP4 RsvB BX1

M=0 DX3 XOP3 BX4 BX0

DX2 XOP2 BX3

DX1 XOP1 BX2

DX0 XOP0

ROWA Packet

COLM Packet

COLC Packet

COLX Packet

ROWR Packet

CTM/CFM

DQA8..0

DQB8..0

COL4

..COL0

ROW2

..ROW0

PACKET

The COLM is associated with a

previous COLC, and is aligned
with the present COLC, indicated
by the Start bit (S=1) position.

The COLX is aligned

with the present COLC,
indicated by the Start
bit (S=1) position.

Direct RDRAM

K4R571669D/K4R881869D

Page 8

Version 1.4 July 2002

Field Encoding Summary

Table 5 shows how the six device address bits are decoded
for the ROWA and ROWR packets. The DR4T and DR4F
encoding merges a fifth device bit with a framing bit. When
neither bit is asserted, the device is not selected. Note that a

broadcast operation is indicated when both bits are set.
Broadcast operation would typically be used for refresh and
power management commands. If the device is selected, the
DM (DeviceMatch) signal is asserted and an ACT or ROP
command is performed.

Table 6 shows the encodings of the remaining fields of the
ROWA and ROWR packets. An ROWA packet is specified
by asserting the AV bit. This causes the specified row of the
specified bank of this device to be loaded into the associated
sense amps.

An ROWR packet is specified when AV is not asserted. An
11 bit opcode field encodes a command for one of the banks
of this device. The PRER command causes a bank and its
two associated sense amps to precharge, so another row or
an adjacent bank may be activated. The REFA (refresh-acti-
vate) command is similar to the ACT command, except the

row address comes from an internal register REFR, and
REFR is incremented at the largest bank address. The REFP
(refresh-precharge) command is identical to a PRER
command.

The NAPR, NAPRC, PDNR, ATTN, and RLXR commands
are used for managing the power dissipation of the RDRAM
device and are described in more detail in

Power State

Management

on page 50. The TCEN and TCAL commands

are used to adjust the output driver slew rate and they are
described in more detail in

Current and Temperature

Control

on page 56.

Table 5: Device Field Encodings for ROWA Packet and ROWR Packet

DR4T

DR4F

Device Selection

Device Match signal (DM)

All devices (broadcast)

DM is set to 1

One device selected

DM is set to 1 if {DEVID4..DEVID0} == {0,DR3..DR0} else DM is set to 0

One device selected

DM is set to 1 if {DEVID4..DEVID0} == {1,DR3..DR0} else DM is set to 0

No packet present

DM is set to 0

Table 6: ROWA Packet and ROWR Packet Field Encodings

ROP10..ROP0 Field

Name

Command Description

2:0

---

No operation.

Row address

ACT

Activate row R8..R0 of bank BR4..BR0 of device and move device to ATTN

000

PRER

Precharge bank BR4..BR0 of this device.

000

REFA

Refresh (activate) row REFR8..REFR0 of bank BR4..BR0 of device.
Increment REFR if BR4..BR0 = 11111 (see Figure 52).

000

REFP

Precharge bank BR4..BR0 of this device after REFA (see Figure 52).

000

PDNR

Move this device into the powerdown (PDN) power state (see Figure 49).

000

NAPR

Move this device into the nap (NAP) power state (see Figure 49).

000

NAPRC

Move this device into the nap (NAP) power state conditionally

000

ATTN

Move this device into the attention (ATTN) power state (see Figure 47).

000

RLXR

Move this device into the standby (STBY) power state (see Figure 48).

001

TCAL

Temperature calibrate this device (see Figure 55).

010

TCEN

Temperature calibrate/enable this device (see Figure 55).

000

NOROP

No operation.

a. The DM (Device Match signal) value is determined by the DR4T,DR4F, DR3..DR0 field of the ROWA and ROWR packets. See Table 5.
b. The ATTN command does not cause a RLX-to-ATTN transition for a broadcast operation (DR4T/DR4F=1/1).
c. An

entry indicates which commands may be combined. For instance, the three commands PRER/NAPRC/RLXR may be specified in one ROP value (011000111000).

Direct RDRAM

K4R571669D/K4R881869D

Page 9

Version 1.4 July 2002

Table 7 shows the COP field encoding. The device must be
in the ATTN power state in order to receive COLC packets.
The COLC packet is used primarily to specify RD (read) and
WR (write) commands. Retire operations (moving data from
the write buffer to a sense amp) happen automatically. See
Figure 18 for a more detailed description.

The COLC packet can also specify a PREC command,
which precharges a bank and its associated sense amps. The
RDA/WRA commands are equivalent to combining RD/WR
with a PREC. RLXC (relax) performs a power mode transi-
tion. See

Power State Management

on page 50.

Table 8 shows the COLM and COLX field encodings. The
M bit is asserted to specify a COLM packet with two 8 bit
bytemask fields MA and MB. If the M bit is not asserted, an
COLX is specified. It has device and bank address fields,
and an opcode field. The primary use of the COLX packet is
to permit an independent PREX (precharge) command to be

specified without consuming control bandwidth on the ROW
pins. It is also used for the CAL(calibrate) and SAM (sam-
ple) current control commands (see

Current and Tempera-

ture Control

on page 56), and for the RLXX power mode

command (see

Power State Management

on page 50).

Table 7: COLC Packet Field Encodings

DC4.. DC0

(select device)

COP3..0

Name

Command Description

----

-----

No operation.

/= (DEVID4 ..0)

-----

Retire write buffer of this device.

== (DEVID4 ..0)

x000

NOCOP

Retire write buffer of this device.

== (DEVID4 ..0)

x001

Retire write buffer of this device, then write column C6..C0 of bank BC4..BC0 to write buffer.

== (DEVID4 ..0)

x010

RSRV

Reserved, no operation.

== (DEVID4 ..0)

x011

Read column C6..C0 of bank BC4..BC0 of this device.

== (DEVID4 ..0)

x100

PREC

Retire write buffer of this device, then precharge bank BC4..BC0 (see Figure 15).

== (DEVID4 ..0)

x101

WRA

Same as WR, but precharge bank BC4..BC0 after write buffer (with new data) is retired.

== (DEVID4 ..0)

x110

RSRV

Reserved, no operation.

== (DEVID4 ..0)

x111

RDA

Same as RD, but precharge bank BC4..BC0 afterward.

== (DEVID4 ..0)

1xxx

RLXC

Move this device into the standby (STBY) power state (see Figure 48).

means not equal,

means equal.

b. An

entry indicates which commands may be combined. For instance, the two commands WR/RLXC may be specified in one COP value (1001).

Table 8: COLM Packet and COLX Packet Field Encodings

DX4 .. DX0

(selects device)

XOP4..0

Name

Command Description

----

MSK

MB/MA bytemasks used by WR/WRA.

/= (DEVID4 ..0)

No operation.

== (DEVID4 ..0)

00000

NOXOP

No operation.

== (DEVID4 ..0)

1xxx0

PREX

Precharge bank BX3..BX0 of this device (see Figure 15).

== (DEVID4 ..0)

x10x0

CAL

Calibrate (drive) I

current for this device (see Figure 54).

== (DEVID4 ..0)

x11x0

CAL/SAM

Calibrate (drive) and Sample ( update) I

current for this device (see Figure 54).

== (DEVID4 ..0)

xxx10

RLXX

Move this device into the standby (STBY) power state (see Figure 48).

== (DEVID4 ..0)

xxxx1

RSRV

Reserved, no operation.

a. An

entry indicates which commands may be combined. For instance, the two commands PREX/RLXX may be specified in one XOP value (10010).

Direct RDRAM

K4R571669D/K4R881869D

Page 10

Version 1.4 July 2002

Electrical Conditions

Table 9: Electrical Conditions

Symbol

Parameter and Conditions

Min

Max

Unit

Junction temperature under bias

100

�C

DD,

DDA

Supply voltage

2.50 - 0.13

2.50 + 0.13

DD,N,

DDA,N

Supply voltage droop (DC) during NAP interval (t

NLIMIT

)

2.0

DD,N,

DDA,N

Supply voltage ripple (AC) during NAP interval (t

NLIMIT

)

-2.0

2.0

CMOS

Supply voltage for CMOS pins (2.5V controllers)
Supply voltage for CMOS pins (1.8V controllers)

1.80 - 0.1

1.80 + 0.2

V
V

REF

Reference voltage

1.40 - 0.2

1.40 + 0.2

DIL

RSL data input - low voltage @ t

CYCLE

=1.875ns

REF

- 0.5

REF

- 0.15

RSL data input - low voltage @ t

CYCLE

=2.50ns

REF

- 0.5

REF

- 0.2

DIH

RSL data input - high voltage

@ t

CYCLE

=1.875ns

REF

+ 0.15

REF

+ 0.5

RSL data input - high voltage

@ t

CYCLE

=2.50ns

REF

+ 0.2

REF

+ 0.5

RSL data asymmetry : R

= (V

DIH

- V

REF

) / (V

REF

- V

DIL

)

0.67

1.00

RSL clock input - common mode V

= (V

CIH

CIL)

1.3

1.8

CIS,CTM

RSL clock input swing: V

CIS

= V

CIH

- V

CIL

(CTM,CTMN pins).

0.35

1.00

CIS,CFM

RSL clock input swing: V

CIS

= V

CIH

- V

CIL

(CFM,CFMN pins).

0.225

1.00

IL,CMOS

CMOS input low voltage

- 0.3

CMOS

/2 - 0.25

IH,CMOS

CMOS input high voltage

CMOS

/2 + 0.25

CMOS

+0.3

a. V

CMOS

must remain on as long as V

is applied and cannot be turned off.

b. V

DIH

is typically equal to V

TERM

(1.8V

�

0.1V) under DC conditions in a system.

c. Voltage undershoot is limited to -0.7V for a duration of less than 5ns.
d. Voltage overshoot is limited toV

CMOS

+0.7V for a duration of less than 5ns

Direct RDRAM

K4R571669D/K4R881869D

Page 11

Version 1.4 July 2002

Electrical Characteristics

Table 10: Electrical Characteristics

Symbol

Parameter and Conditions

Min

Max

Unit

Junction-to-Case thermal resistance

0.5

�C/Watt

REF

current @ V

REF,MAX

-10

�A

RSL output high current @ (0

OUT

)

-10

�A

ALL

RSL I

current @ t

CYCLE

= 1.875ns V

= 0.9V, V

DD,MIN

, T

J,MAX

32.0

90.0

RSL I

current @ t

CYCLE

= 2.50ns V

= 0.9V, V

DD,MIN

, T

J,MAX

a. This measurement is made in manual current control mode; i.e. with all output device legs sinking current.

30.0

90.0

RSL

current resolution step

1.5

OUT

Dynamic output impedance @ V

= 0.9V

150

OL,NOM

RSL I

current @ V

= 1.0V

b,c

@ t

CYCLE

=1.875ns

b. This measurement is made in automatic current control mode after at least 64 current control calibration operations to a device and after CCA and

CCB are initialized to a value of 64. This value applies to all DQA and DQB pins.

c. This measurement is made in automatic current control mode in a 25

test system with V

TERM

= 1.714V and V

REF

= 1.357V and with the ASYMA

and ASYMB register fields set to 0.

27.1

30.1

RSL I

current @ V

= 1.0V

b,c

@ t

CYCLE

=2.50ns

26.6

30.6

I,CMOS

CMOS input leakage current @ (0

I,CMOS

CMOS

)

-10.0

10.0

�A

OL,CMOS

CMOS output voltage @ I

OL,CMOS

= 1.0mA

0.3

OH,CMOS

CMOS output high voltage @ I

OH,CMOS

= -0.25mA

CMOS

-0.3

Direct RDRAM

K4R571669D/K4R881869D

Page 12

Version 1.4 July 2002

Timing Conditions

Table 11: Timing Conditions

Symbol

Parameter

Min

Max

Unit

Figure(s)

CYCLE

CTM and CFM cycle times (-1066)

1.875

2.5

Figure 56

CTM and CFM cycle times (-800)

2.50

3.33

, t

CTM and CFM input rise and fall times. Use the minimum value of
these parameters during testing.

0.2

0.5

Figure 56

, t

CTM and CFM high and low times

40%

60%

CYCLE

Figure 56

CTM-CFM differential (MSE/MS=0/0)
CTM-CFM differential (MSE/MS=1/1)

CTM-CFM differential only for 1.875ns (MSE/MS=1/0)

0.0
0.9

-0.1

1.0
1.0

0.1

CYCLE

Figure 43
Figure 56

DCW

Domain crossing window

-0.1

0.1

CYCLE

Figure 62

, t

DQA/DQB/ROW/COL input rise/fall times (20% to 80%). Use the
minimum value of these parameters during testing.

0.2

0.45

Figure 57

, t

DQA/DQB/ROW/COL-to-CFM set/hold @ t

CYCLE

=1.875ns

0.160

Figure 57

DQA/DQB/ROW/COL-to-CFM set/hold @ t

CYCLE

=2.50ns

0.200

b.c

DR1,

DF1

SIO0, SIO1 input rise and fall times

5.0

Figure 59

DR2,

DF2

CMD, SCK input rise and fall times

2.0

Figure 59

CYCLE1

SCK cycle time - Serial control register transactions

1000

Figure 59

SCK cycle time - Power transitions @ t

CYCLE

=1.875ns

7.5

SCK cycle time - Power transitions @ t

CYCLE

=2.50ns

CH1

, t

CL1

SCK high and low times @ t

CYCLE

=1.875ns

3.5

Figure 59

SCK high and low times @ t

CYCLE

=2.50ns

4.25

CMD setup time to SCK rising or falling edge

@ t

CYCLE

=1.875ns

1.0

Figure 59

CMD setup time to SCK rising or falling edge

@ t

CYCLE

=2.50ns

1.25

CMD hold time to SCK rising or falling edge

Figure 59

SIO0 setup time to SCK falling edge

Figure 59

SIO0 hold time to SCK falling edge

Figure 59

PDEV setup time on DQA5..0 to SCK rising edge.

Figure 50

PDEV hold time on DQA5..0 to SCK rising edge.

5.5

Figure 60

ROW2..0, COL4..0 setup time for quiet window

-1

CYCLE

Figure 50

ROW2..0, COL4..0 hold time for quiet window

CYCLE

Figure 50

NPQ

Quiet on ROW/COL bits during NAP/PDN entry

CYCLE

Figure

READTOCC

Offset between read data and CC packets (same device)

CYCLE

Figure 54

CCSAMTOREAD

Offset between CC packet and read data (same device)

CYCLE

Figure 54

CTM/CFM stable before NAP/PDN exit

CYCLE

Figure 50

Direct RDRAM

K4R571669D/K4R881869D

Page 13

Version 1.4 July 2002

CTM/CFM stable after NAP/PDN entry

100

CYCLE

Figure 49

FRM

ROW packet to COL packet ATTN framing delay

CYCLE

Figure 48

NLIMIT

Maximum time in NAP mode

10.0

�s

Figure 47

REF

Refresh interval

Figure 52

BURST

Interval after PDN or NAP (with self-refresh) exit in which all
banks of the RDRAM device must be refreshed at least once.

200

�s

Figure 53

CCTRL

Current control interval

34 t

CYCLE

100ms

ms/t

CYCLE

Figure 54

TEMP

Temperature control interval

100

Figure 55

TCEN

TCE command to TCAL command

150

CYCLE

Figure 55

TCAL

TCAL command to quiet window

CYCLE

Figure 55

TCQUIET

Quiet window (no read data)

140

CYCLE

Figure 55

PAUSE

RDRAM device delay (no RSL operations allowed)

200.0

�s

page 38

a. MSE/MS are fields of the SKIP register. For this combination (skip override) the tDCW parameter range is effectively 0.0 to 0.0.
b.

S,MIN

and t

H,MIN

for other t

CYCLE

values can be interpolated between or extrapolated from the timings at the 2 specified t

CYCLE

values.

c. This parameter also applies to a-1066 part when operated with t

CYCLE

= 2.50ns

d. With V

IL,CMOS

=0.5V

CMOS

-0.4V and V

IH,CMOS

=0.5V

CMOS

+0.4V

e. Effective hold becomes t

'=t

+[PDNXA

�

SCYCLE

PDNXB,MAX

]-[PDNX

�

256

�

SCYCLE

]

if [PDNX

�

256

�

SCYCLE

] < [PDNXA

�

SCYCLE

PDNXB,MAX

]. See Figure 50.

Table 11: Timing Conditions

Symbol

Parameter

Min

Max

Unit

Figure(s)

Direct RDRAM

K4R571669D/K4R881869D

Page 14

Version 1.4 July 2002

Timing Characteristics

Table 12: Timing Characteristics

Symbol

Parameter

Min

Max

Unit

Figure(s)

CTM-to-DQA/DQB output time @ t

CYCLE

=1.875ns

-0.195

a. t

Q,MIN

and t

Q,MAX

for other t

CYCLE

values can be interpolated between or extrapolated from the timings at the 3 specified t

CYCLE

values.

b.This parameter also applies to a-1066 part when operated with t

CYCLE

= 2.50ns

+0.195

Figure 58

CTM-to-DQA/DQB output time @ t

CYCLE

=2.5ns

-0.260

a,b

+0.260

a,b

, t

DQA/DQB output rise and fall times @ t

CYCLE

=1.875ns

0.2

0.32

Figure 58

DQA/DQB output rise and fall times @ t

CYCLE

=2.5ns

0.2

0.45

SCK(neg)-to-SIO0 delay @ C

LOAD,MAX

= 20pF (SD read data valid).

Figure 61

SCK(pos)-to-SIO0 delay @ C

LOAD,MAX

= 20pF (SD read data hold).

Figure 61

QR1

, t

QF1

SIO

OUT

rise/fall @ C

LOAD,MAX

= 20pF

Figure 61

PROP1

SIO0-to-SIO1 or SIO1-to-SIO0 delay @ C

LOAD,MAX

= 20pF

Figure 61

NAPXA

NAP exit delay - phase A

Figure 50

NAPXB

NAP exit delay - phase B

Figure 50

PDNXA

PDN exit delay - phase A

�s

Figure 50

PDNXB

PDN exit delay - phase B

9000

CYCLE

Figure 50

ATTN-to-STBY power state delay

CYCLE

Figure 48

STBY-to-ATTN power state delay

CYCLE

Figure 48

ASN

ATTN/STBY-to-NAP power state delay

CYCLE

Figure 49

ASP

ATTN/STBY-to-PDN power state delay

CYCLE

Figure 49

Direct RDRAM

K4R571669D/K4R881869D

Page 15

Version 1.4 July 2002

Timing Parameters

Table 13: Timing Parameter Summary

Parameter

Description

Min

-32P

-1066

Min

-32

-1066

Min

-35

-1066

Min

-40

-800

Min

-45

-800

Max

Units

Figure(s)

Row Cycle time of RDRAM banks -the interval between ROWA pack-
ets with ACT commands to the same bank.

CYCLE

Figure 16
Figure 17

RAS

RAS-asserted time of RDRAM bank - the interval between ROWA
packet with ACT command and next ROWR packet with PRER

com-

mand to the same bank.

�s

CYCLE

Figure 16
Figure 17

Row Precharge time of RDRAM banks - the interval between ROWR
packet with PRER

command and next ROWA packet with ACT com-

mand to the same bank.

CYCLE

Figure 16
Figure 17

Precharge-to-precharge time of RDRAM device - the interval between
successive ROWR packets with PRER

commands to any banks of the

same device.

CYCLE

Figure 13

RAS-to-RAS time of RDRAM device - the interval between successive
ROWA packets with ACT commands to any banks of the same device.

CYCLE

Figure 14

RCD

RAS-to-CAS Delay - the interval from ROWA packet with ACT com-
mand to COLC packet with RD or WR command). Note - the RAS-to-
CAS delay seen by the RDRAM core (t

RCD-C

) is equal to t

RCD-C

= 1 +

RCD

because of differences in the row and column paths through the

RDRAM interface.

CYCLE

Figure 16
Figure 17

CAC

CAS Access delay - the interval from RD command to Q read data. The
equation for t

CAC

is given in the TPARM register in Figure 40.

CYCLE

Figure 5

Figure 40

CWD

CAS Write Delay (interval from WR command to D write data.

CYCLE

Figure 5

CAS-to-CAS time of RDRAM bank - the interval between successive
COLC commands).

CYCLE

Figure 16
Figure 17

PACKET

Length of ROWA, ROWR, COLC, COLM or COLX packet.

CYCLE

Figure 3

RTR

Interval from COLC packet with WR command to COLC packet which
causes retire, and to COLM packet with bytemask.

CYCLE

Figure 18

OFFP

The interval (offset) from COLC packet with RDA command, or from
COLC packet with retire command (after WRA automatic precharge),
or from COLC packet with PREC command, or from COLX packet
with PREX command to the equivalent ROWR packet with PRER. The
equation for t

OFFP

is given in the TPARM register in Figure 40.

CYCLE

Figure 15
Figure 40

RDP

Interval from last COLC packet with RD command to ROWR packet
with PRER.

CYCLE

Figure 16

RTP

Interval from last COLC packet with automatic retire command to
ROWR packet with PRER.

CYCLE

Figure 17

a. Or equivalent PREC or PREX command. See Figure 15.
b. This is a constraint imposed by the core, and is therefore in units of

�s rather than t

CYCLE

Direct RDRAM

K4R571669D/K4R881869D

Page 16

Version 1.4 July 2002

Absolute Maximum Ratings

Note*) Component : refer to T

RIMM: refre to T

PLATE, MAX

- Supply Current Profile

Table 14: Absolute Maximum Ratings

Symbol

Parameter

Min

Max

Unit

I,ABS

Voltage applied to any RSL or CMOS pin with respect to Gnd

- 0.3

+0.3

DD,ABS

, V

DDA,ABS

Voltage on VDD and VDDA with respect to Gnd

- 0.5

+1.0

STORE

Storage temperature

- 50

100

�C

MIN

Minimum operation temperature

Note*

�C

Table 15: Supply Current Profile

value

RDRAM Power State and Steady-State Transaction Rates

Min

Max

(1066MHz, -

32P/-32/-35)

Max

(800MHz,

-40/-45)

Unit

DD,PDN

Device in PDN, self-refresh enabled and INIT.LSR=0.

6000

�A

DD,NAP

Device in NAP.

DD,STBY

Device in STBY. This is the average for a device in STBY with (1) no
packets on the Channel, and (2) with packets sent to other devices.

100

DD,REFRESH

Device in STBY and refreshing rows at the t

REF,MAX

period.

100

DD,ATTN

Device in ATTN. This is the average for a device in ATTN with (1) no
packets on the Channel, and (2) with packets sent to other devices.

150

120

DD,ATTN-W

Device in ATTN. ACT command every 8�t

CYCLE

, PRE command every

8�t

CYCLE

, WR command every 4

�

CYCLE

, and data is 1100..1100

790(x18)

730(x16)

620(x18)
575(x16)

DD,ATTN-R

Device in ATTN. ACT command every 8�t

CYCLE

, PRE command every

�

CYCLE

, RD command every 4

�

CYCLE

, and data is 1111..1111

700(x18)
650(x16)

560(x18)
530(x16)

a. CMOS interface consumes power in all power states.
b. x18/x16 RDRAM data width.
c. This does not include the I

sink current. The RDRAM dissipates I

�

in each output driver when a logic one is driven.

Table 16: Supply Current at Initialization

Symbol

Parameter

Allowed Range of t

CYCLE

Min

Max

Unit

DD,PWRUP,D

from power -on to SETR

1.875ns to 2.5ns

DD,MIN

200

DD,SETR,D

from SETR to CLRR

1.875ns to 2.5ns

DD,MIN

332

a. The supply current will be 150mA when t

CYCLE

is in the range 15ns to 1000ns.

Direct RDRAM

K4R571669D/K4R881869D

Page 17

Version 1.4 July 2002

Capacitance and Inductance

Table 17: RSL Pin Parasitics

Symbol

Parameter and Conditions - RSL pins

Min

Max

Unit

Figure

RSL effective input inductance

@ t

CYCLE

=1.875ns

3.5

Figure 63

RSL effective input inductance

@ t

CYCLE

=2.5ns

4.0

Mutual inductance between any DQA or DQB RSL signals.

0.2

Figure 63

Mutual inductance between any ROW or COL RSL signals.

0.6

Difference in L

value between any RSL pins of a single device.

1.8

Figure 63

RSL effective input capacitance

@ t

CYCLE

=1.875ns

2.0

2.3

Figure 63

RSL effective input capacitance

@ t

CYCLE

=2.5ns

2.0

2.4

Mutual capacitance between any RSL signals.

0.1

Figure 63

Difference in C

value between average of {CTM, CTMN,

CFM, CFMN} and any RSL pins of a single device.

0.06

Figure 63

RSL effective input resistance

@ t

CYCLE

=1.875ns

Figure 63

RSL effective input resistance

@ t

CYCLE

=2.5ns

a. This value is a combination of the device IO circuitry and package capacitances

Table 18: CMOS Pin Parasitics

Symbol

Parameter and Conditions - CMOS pins

Min

Max

Unit

Figure

I ,CMOS

CMOS effective input inductance

8.0

Figure 63

I ,CMOS

CMOS effective input capacitance (SCK,CMD)

1.7

2.1

I ,CMOS,SIO

CMOS effective input capacitance (SIO1, SIO0)

7.0

a. This value is a combination of the device IO circuitry and package capacitances.

Электронный компонент: K4R881869D