1
Arp,20 2005 ver1.1
S amHop Microelectronics C orp.
P R ODUC T S UMMAR Y
V
DS S
I
D
R
DS (ON) ( m
W
) Max
-15A
68 @ V
G S
= -10V
85 @ V
G S
= -4.5V
F E AT UR E S
-55V
TO-252 and TO-251 Package.
S uper high dense cell design for low R
DS (ON
).
R ugged and reliable.
S TU S E R IE S
TO-252AA(D-PAK)
S TD S E R IE S
TO-251(l-PAK)
G
G
S
S
D
D
S
G
D
S T U/D1855P L
P-Channel E nhancement Mode Field E ffect Transistor
Parameter
S ymbol
Unit
Drain-S ource Voltage
V
DS
V
Gate-S ource Voltage
V
GS
V
Drain Current-Continuous @ Ta
-Pulsed
I
D
42
A
A
A
W
I
DM
Drain-S ource Diode Forward Current
I
S
Maximum Power Dissipation
P
D
Operating Junction and S torage
Temperature R ange
T
J
, T
S TG
-55 to 150
C
a
a
a
b
-55
-10
20
-15
-30
25 C
70 C
Ta= 25 C
Ta=70 C
28
-12
A
Limit
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Case
Thermal R esistance, Junction-to-Ambient
R
JC
3
50
R
JA
/W
C
/W
C
AB S OLUTE MAXIMUM R ATINGS (T
A
=25 C unles s otherwis e noted)
1
Drain-S ource Voltage R ating
60
V
Vspike
d
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
25 C unless otherwise noted)
=
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHAR ACTER ISTICS
Drain-Source Breakdown Voltage
BV
DSS
=
V
GS
0V, I
D
-250uA
=
-55
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
-44V, V
GS
0V
=
=
-1
uA
Gate-Body Leakage
I
GSS
V
GS
20V, V
DS
0V
=
=
100
nA
ON CHAR ACTER ISTICS
b
Gate Threshold Voltage
V
GS(th)
V
DS
V
GS
, I
D
= -250uA
=
-1.3
-2.5
V
Drain-Source On-State R esistance
R
DS(ON)
V
GS
-10V, I
D
-10A
V
GS
-4.5V, I
D
-6A
On-State Drain Current
I
D(ON)
V
DS
= -5V, V
GS
= -10V
A
S
Forward Transconductance
FS
g
V
DS
-15V, I
D -
10A
DYNAMIC CHAR ACTER ISTICS
c
Input Capacitance
C
ISS
C
R SS
C
OSS
Output Capacitance
R everse Transfer Capacitance
V
DS
=-30V, V
GS
= 0V
f =1.0MH
Z
P
F
P
F
P
F
SWITCHING CHAR ACTER ISTICS
c
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
D
= -30V,
I
D
= -1A,
V
GEN
= - 10V,
R
GEN
= 6 ohm
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=-30V, I
D
= -5A,
V
GS
=-10V
nC
nC
nC
C
Fall Time
=
=
=
=
=
=
5
2
m-ohm
m-ohm
68
85
nC
V
DS
=-30V,I
D
=-5A,V
GS
=-10V
V
DS
=-30V,I
D
=-5A,V
GS
=-4.5V
S T U/D1855P L
20
12
830
110
65
7.1
22.7
59.3
24.9
16.7
8.1
1.9
4.1
985
125
75
8
26
68
28
19
9.5
2.6
4.7
-1.8
50
65
S T U/D1855P L
Parameter
S ymbol
Condition
Min Typ Max Unit
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
=25 C unless otherwise noted)
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
Diode Forward Voltage
V
S D
V
GS
= 0V, Is =-10A
-0.9
V
b
C
Notes
c.Guaranteed by design, not subject to production testing.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
F igure 1. Output C haracteristics
F igure 2. Transfer C haracteristics
F igure 4. On-R esistance Variation with
Temperature
F igure 3. C apacitance
-V
DS
, Drain-to S ource Voltage (V )
-V
G S
, G ate-to-S ource Voltage (V )
-V
DS
, Drain-to-S ource Voltage (V )
-
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
-
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
a.Surface Mounted on FR 4 Board, t 10sec.
5
20
16
12
8
4
0
0
0.5
1
1.5
2
2.5
3
-V
G S
=10V
-V
G S
=3V
25 C
20
15
10
5
1
0
0
0.8
1.6
2.4
3.2
4.0
4.8
T j=125 C
3
2.2
1.8
1.4
1.0
0.6
0.2
0
-50
0
50
100
125
-25
25
75
V
G S
=-10V
I
D
=-10A
-1.3
-V
G S
=4V
0 5 10 15 20 25 30
1200
1000
800
600
400
200
0
C iss
C oss
C rss
T J , J unction T emperature ( C )
-V
G S
=4.5V
-V
G S
=8V
O
n
-
R
e
s
i
s
t
a
n
c
e
R
D
S
(
O
N
)
,
N
o
r
m
a
l
i
z
e
d
-55 C
d.Guaranteed when external R g=6 ohm and tf < tf max
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
V
t
h
,
N
o
r
m
a
l
i
z
e
d
G
a
t
e
-
S
o
u
r
c
e
T
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
g
F
S
,
T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e
(
S
)
-
V
G
S
,
G
a
t
e
t
o
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
B
V
D
S
S
,
N
o
r
m
a
l
i
z
e
d
D
r
a
i
n
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
-
I
s
,
S
o
u
r
c
e
-
d
r
a
i
n
c
u
r
r
e
n
t
(
A
)
F igure 7. T rans conductance V ariation
with Drain C urrent
-I
DS
, Drain-S ource C urrent (A)
F igure 9. G ate C harge
Qg, T otal G ate C harge (nC )
F igure 10. Maximum S afe
O perating Area
-V
DS
, Drain-S ource V oltage (V )
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
-V
S D
, B ody Diode F orward V oltage (V )
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
-
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
15
12
9
6
18
0
0
5
10
15
20
25
3
V
DS
=-15V
20
10
0
1
0.4
0.6
0.8
1.0
1.2
1.4
8
10
6
4
2
0
0
3
6
9 12
15 18
21 24
V
DS
=-30V
I
D
=-5A
T
J
=25 C
60
10
1
0.1
0.03
0.1
1
10
60
10m
s
100
ms
DC
V
G S
=-10V
S ingle P ulse
Tc=25 C
4
-50 -25
0
25
50
75 100 125
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
=-250uA
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75 100 125
V
DS
=V
G S
I
D
=-250uA
S T U/D1855P L
30
R
DS
(O
N)
Lim
it
1s
F igure 11. S witching T est C ircuit
F igure 12. S witching Waveforms
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
t
d(off)
90%
10%
10%
50%
50%
90%
t
off
t
f
90%
PULS E WIDTH
5
6
S TU/D1855P L
INVE R TE D
V
DD
R
D
V
V
R
S
V
G
G S
IN
G E N
OUT
L
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
N
o
r
m
a
l
i
z
e
d
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
R
e
s
i
s
t
a
n
c
e
Single Pulse
on
P
DM
t
1
t
2
1. R
thJ A
(t)=r (t) * R
J A
2. R
J A
=S ee Datasheet
3. T
J M-
T
A
= P
DM
* R
J A
(t)
4. Duty C ycle, D=t
1
/t
2
th
th
th
0.01
0.02
0.5
0.2
0.1
0.05
5
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