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N-Channel E nhancement Mode Field E ffect Trans is tor
AP R .25 2006
S T S 4300
G
D
S
S OT-23
S
G
D
1
S amHop Microelectronics C orp.
P R ODUC T S UMMAR Y
V
DS S
I
D
R
DS (ON) ( m
W
) Max
40V
3.5A
62 @ V
G S
= 10V
80 @ V
G S
=4.5V
F E AT UR E S
S uper high dense cell design for low R
DS (ON
).
R ugged and reliable.
S OT-23 package.
ABS OLUTE MAXIMUM R ATINGS (T
A
=25 C unless otherwise noted)
Parameter
S ymbol
Unit
Drain-S ource Voltage
V
DS
V
Gate-S ource Voltage
V
GS
V
Drain Current-Continuous @ Ta
-Pulsed
I
D
1.25
A
A
A
W
I
DM
Drain-S ource Diode Forward Current
I
S
Maximum Power Dissipation
P
D
Operating Junction and S torage
Temperature R ange
T
J
, T
S TG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient
100
/W
C
a
a
40
1.25
20
R
JA
3.5
15
25 C
70 C
Ta= 25 C
Ta=70 C
0.76
2.7
A
Limit
S T S 4300
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
25 C unless otherwise noted)
=
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHAR ACTER ISTICS
Drain-Source Breakdown Voltage
BV
DSS
=
V
GS
0V, I
D
250uA
=
40
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
32V, V
GS
0V
=
=
1
uA
Gate-Body Leakage
I
GSS
V
GS
20V, V
DS
0V
=
=
100 nA
ON CHAR ACTER ISTICS
b
Gate Threshold Voltage
V
GS(th)
V
DS
V
GS
, I
D
= 250uA
=
1
3.0
V
Drain-Source On-State R esistance
R
DS(ON)
V
GS
10V, I
D
3.5A
62
V
GS
4.5V, I
D
2.8A
80
On-State Drain Current
I
D(ON)
V
DS
= 5V, V
GS
= 4.5V
A
S
Forward Transconductance
FS
g
V
DS
5V, I
D
DYNAMIC CHAR ACTER ISTICS
c
Input Capacitance
C
ISS
C
R SS
C
OSS
Output Capacitance
R everse Transfer Capacitance
V
DS
=15V, V
GS
= 0V
f =1.0MH
Z
P
F
P
F
P
F
SWITCHING CHAR ACTER ISTICS
c
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= 15V,
I
D
= 1A,
V
GS
= 10V,
R
L
= 15
ohm
R
GEN
= 6
ohm
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=15V, I
D
= 3.5A,
V
GS
=10V
nC
nC
nC
C
Fall Time
=
=
=
=
=
2
m-ohm
m-ohm
10
=3.5A
9
320
55
32
6.6
3.9
15.7
3.3
6
0.8
1.5
68
54
1.6
Parameter
S ymbol
Condition
Min Typ Max Unit
E LE CTR ICAL CHAR ACTE R IS TICS (T
C
=25 C unless otherwise noted)
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
Diode Forward Voltage
V
S D
V
GS
= 0V, Is = 1.25A
1.3
V
a
Notes
b.Guaranteed by design, not subject to production testing.
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
F igure 2. Transfer C haracteristics
F igure 4. On-R esistance Variation with
Drain C urrent and Temperature
I
D
, Drain C urrent (A)
V
G S
, G ate-to-S ource Voltage (V )
R
D
S
(
o
n
)
(
m
W
)
O
n
-
R
e
s
i
s
t
a
n
c
e
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
3
R
D
S
(
O
N
)
,
N
o
r
m
a
l
i
z
e
d
90
75
60
45
30
15
0
-55 C
25 C
8
6
4
2
0
0
0.7
1.4
2.1
2.8
3.5
4.2
T j=125 C
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
25
50
75
175
0.82
T j( C )
150
100
125
V
G S
=10V
I
D
=3.5A
T j, J unction T emperature ( C )
F igure 1. Output C haracteristics
V
DS
, Drain-to-S ource Voltage (V )
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
10
8
6
4
2
0
0
0.5
1
1.5
2
2.5
3
V
G S
=4.5V
V
G S
=3V
V
G S
=3.5V
V
G S
=4V
F igure 3. On-R esistance vs. Drain C urrent
and G ate V oltage
2
4
6
8
10
0
V
G S
=10V
V
G S
=4.5V
V
G S
=4.5V
I
D
=2.8A
V
G S
=10V
S T S 4300
10
F igure 6. B reakdown V oltage V ariation
with T emperature
V
t
h
,
N
o
r
m
a
l
i
z
e
d
G
a
t
e
-
S
o
u
r
c
e
T
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
B
V
D
S
S
,
N
o
r
m
a
l
i
z
e
d
D
r
a
i
n
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
I
s
,
S
o
u
r
c
e
-
d
r
a
i
n
c
u
r
r
e
n
t
(
A
)
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
V
S D
, B ody Diode F orward V oltage (V )
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
4
6
20.0
10.0
1.0
0.6
0.8
1.0
1.2
1.4
1.6
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75 100 125 150
V
DS
=V
G S
I
D
=250uA
-50 -25
0
25 50
75 100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
=250uA
V
G S
, G ate- S ource Voltage (V )
R
D
S
(
o
n
)
(
m
W
)
180
150
120
90
60
30
0
F igure 7. On-R esistance vs.
G ate-S ource V oltage
2
4
6
8
10
0
F igure 5. G ate T hres hold V ariation
with T emperature
25 C
25 C
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