N-C hannel Logic Level E nhancement Mode F ield E ffect Transistor
TO-252 and TO-251 P ackage.
AB S OLUTE MAXIMUM R ATING S (Ta=25 C unless otherwise noted)
S amHop Microelectronics C orp.
Apr 03
,
2006
1
P R ODUC T S UMMAR Y
V
DS S
I
D
R
DS (ON) ( m
)
30V
50 A
9
@ V
G S
= 10V
12
@ V
G S
= 4.5V
F E AT UR E S
S uper high dense cell design for low R
DS (ON
).
R ugged and reliable.
S
G
D
S TU S E R IE S
TO-252AA(D-P AK )
S TD S E R IE S
TO-251(l-P AK )
G
G
S
S
D
D
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, J unction-to-C ase
Thermal R esistance, J unction-to-Ambient
R
J C
3
50
R
J A
/W
C
/W
C
30
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
V
DS
V
G ate-S ource Voltage
20
V
G S
V
-P ulsed
I
D
A
I
DM
A
Drain-S ource Diode F orward C urrent
20
I
S
A
Maximum P ower Dissipation
P
D
W
Operating and S torage Temperature R ange
T
J
, T
S TG
-55 to 175
C
@ Tc=25 C
50
Drain C urrent-C ontinuous
@ T
C
=25 C
a
Max
S T U/D302S
50
180
Parameter
S ymbol
Condition
Min Typ Max Unit
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
BV
DS S
=
V
GS
0V, I
D
250uA
=
30
V
Zero Gate Voltage Drain Current
I
DS S
V
DS
24V, V
GS
0V
=
=
1
Gate-Body Leakage
I
GS S
V
GS
20V, V
DS
0V
=
=
100 nA
ON CHAR ACTE R IS TICS
a
Gate Threshold Voltage
V
GS (th)
V
DS
V
GS
, I
D
= 250uA
=
1
3
V
Drain-S ource On-S tate R esistance
R
DS (ON)
V
GS
10V, I
D
20A
V
GS
4.5V, I
D
10A
On-S tate Drain Current
I
D(ON)
V
DS
= 10V, V
GS
= 10V
A
S
Forward Transconductance
FS
g
V
DS
10V, I
D
10A
DYNAMIC CHAR ACTE R IS TICS
b
Input Capacitance
C
IS S
C
R S S
C
OS S
Output Capacitance
R everse Transfer Capacitance
V
DS
=15V, V
GS
= 0V
f =1.0MH
Z
P
F
P
F
P
F
S WITCHING CHAR ACTE R IS TICS
b
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= 15V
I
D
= 1 A
V
GS
= 10V
R
GE N
= 6 ohm
ns
ns
ns
ns
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=15V, I
D
= 20A
V
GS
=10V
nC
nC
nC
C
Fall Time
=
=
=
=
=
=
2
5
uA
m ohm
m ohm
V
DS
=15V, I
D
=20A,V
GS
=10V
nC
V
DS
=15V, I
D
=20A,V
GS
=4.5V
50
225
325
1020
26
28
37
33
18
8.2
2.3
13
22
ohm
R g
Gate resistance
V
GS
=0V, V
DS
= 0V, f=1.0MH
Z
0.25
E LE C TR IC AL C HAR AC TE R IS TIC S (T
C
=25 C unless otherwise noted)
9
12
S T U/D302S
7
10
1.7
P arameter
S ymbol
C ondition
Min Typ Max Unit
E LE C TR IC AL C HAR AC TE R IS TIC S (T
C
=25 C unless otherwise noted)
DR AIN-S OUR C E DIODE C HAR AC TE R IS TIC S
Diode Forward Voltage
V
S D
V
G S
= 0V, Is = 10A
1.3
V
a
Notes
b.Guaranteed by design, not subject to production testing.
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
F igure 2. Trans fer C haracteris tics
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
I
D
, Drain C urrent (A)
V
G S
, G ate-to-S ource Voltage (V )
R
DS
(
o
n
)
(m
)
On
-
R
e
s
i
s
t
a
n
c
e
I
D
,
D
ra
i
n
C
u
rre
n
t
(
A
)
3
R
DS
(
O
N
)
,
N
o
r
m
a
liz
e
d
S T U/D302S
18
15
12
9
6
3
0
-55 C
25 C
20
15
10
5
0
0
0.6
1.2
1.8
2.4
3.0
3.6
T j=125 C
1.5
1.4
1.3
1.2
1.1
1.0
0.0
0
25
50
75
0.83
T j( C )
150
100
125
T j, J unction T empera ture ( C )
F igure 1. Output C haracteris tics
V
DS
, Drain-to-S ource Voltage (V )
I
D
,D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
80
64
48
32
16
0
0
0.5
1
1.5
2
2.5
3
V
G S
=4.5V
V
G S
=3V
V
G S
=3.5V
V
G S
=4V
V
G S
=10V
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
16
32
48
64
80
1
V
G S
=10V
V
G S
=4.5V
V
G S
=4.5V
I
D
=10A
V
G S
=8V
V
G S
=10V
I
D
=20A
F igure 6. B rea kdown V olta ge V a ria tion
with T empera ture
Vt
h
,
N
o
r
m
a
l
i
z
e
d
G
a
t
e
-
S
o
u
rc
e
T
hre
s
ho
l
d
V
o
l
t
a
g
e
BV
DS
S
,
N
o
r
m
a
liz
e
d
D
r
a
i
n
-
S
o
urc
e
B
r
e
a
k
d
ow
n
V
ol
t
a
g
e
Is
,
S
o
u
r
c
e
-
d
r
a
i
n
c
u
r
r
e
n
t
(
A
)
F igure 8. B ody Diode F orwa rd V olta ge
V a ria tion with S ource C urrent
V
S D
, B ody Diode F orward V oltage (V )
T j, J unction T empera ture ( C )
T j, J unction T empera ture ( C )
4
6
20.0
10.0
1.0
0.4
0.6
0.8
1.0
1.2
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100 125 150
V
DS
=V
G S
I
D
=250uA
-50
-25
0
25
50
75
100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
=250uA
V
G S
, G ate- S ource Voltage (V )
R
DS
(
o
n
)
(m
)
30
25
20
15
10
5
0
F igure 7. On-R es is tance vs .
G ate-S ource V oltage
2
4
6
8
10
0
F igure 5. G a te T hres hold V a ria tion
with T empera ture
25 C
125 C
25 C
75 C
125 C
I
D
=20A
75 C
S T U/D302S
6
F igure 12. Maximum S afe
Operating Area
V
DS
, Drain-S ource Voltage (V)
I
D
,D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
100
10
0.5
0.1
1
1
10
30 60
V
G S
=10V
S ingle P ulse
Tc=25 C
R
DS
(O
N)
Lim
it
DC
1s
100
ms
10m
s
1m
s
V
GS
,
G
a
t
et
o
S
o
u
r
c
eV
o
l
t
a
g
e
(
V
)
F igure 10. G ate C harge
Qg, T otal G ate C harge (nC )
10
8
6
4
2
0
0
5
10 15 20 25
30
35 40
V
DS
=15V
I
D
=20A
F igure 9. C apacitance
V
DS
, Drain-to S ource Voltage (V)
C,
Ca
p
a
c
i
t
a
n
c
e
(
p
F
)
0
5
10
15
20
25
30
1200
1000
800
600
400
200
0
C iss
C oss
C rss
F igure 11.s witching characteris tics
R g, G ate R esistance (
)
S
w
it
c
h
in
g
T
im
e
(
n
s
)
100
10
1
1
6 10
60 100
60
600
300
220
T D(on)
T D(off)
T f
V DS =15V ,ID=1A
V G S =10V
5
600
S TU/D302S
T r
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