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Электронный компонент: UML11N

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EML11 / UML11N
Transistors
Rev.B
1/4
General purpose transistor
(isolated transistor and diode)
EML11 / UML11N


2SA1774 and a RB521S-30 are housed independently in a EMT5 or UMT5 package.

Applications
DC / DC converter
Motor driver

Features
1) Tr2: Small Signal Transistor
Di1: Low V
F
2) Small package

Structure
Silicon epitaxial planar transistor
Schottky barrier diode


The following characteristics apply to both Di1 and Tr2.

Equivalent circuit (EML11 / UML11N)
Tr2
Di1
(1)
(2)
(3)
(4)
(5)

Packaging specifications
Type
EML11
EMT5
L11
T2R
8000
UML11N
UMT5
L11
TR
3000
Package
Marking
Code
Basic ordering unit(pieces)



External dimensions (Unit : mm)
Each lead has same dimensions
Abbreviated symbol : L11
Each lead has same dimensions
Abbreviated symbol : L11
ROHM : EMT5
UMT5
EMT5
ROHM : UMT5
EIAJ : SC-88A
0.9
0.15
0.1Min.
0.7
2.1
1.3
0.65
2.0
0.2
1.25
0.65
(4)
(1)
(5)
(2) (3)
1pin mark
0.22
1.2
1.6
(1) (2) (3)
(5) (4)
0.13
0.5
0.5
0.5
1.0
1.6
1pin mark










EML11 / UML11N
Transistors
Rev.B
2/4
Absolute maximum ratings (Ta=25
C)
Di1
Parameter
Symbol
I
O
I
FSM
V
R
Tj
Limits
200
1
30
125
Unit
mA
A
V
C
Average rectified forward current
Forward current surge peak (60H
Z
,
1
)
Reverse voltage (DC)
Junction temperature

Tr2
Parameter
Each terminal mounted on a recommended.
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
Tj
Limits
-
50
-
6
-
150
120
150
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
-
60
Unit
V
V
V
mA
mW
C

Di1 / DTr2
Parameter
Each terminal mounted on a recommended.
Symbol
P
d
Tstg
Limits
150
-
55 to +125
Power dissipation
Storage temperature
Unit
mW
C

Electrical characteristics (Ta=25
C)
Di1
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
-
0.50
V
F
0.40
V
I
F
=200mA
V
R
=10V
Forward voltage
I
R
-
4.0
30
A
Reverse current

Tr2
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
-
60
-
50
-
6
-
-
180
-
-
-
-
-
-
-
-
-
-
140
4.0
-
-
-
-
100
-
100
390
-
500
-
5.0
V
I
C
=-
50
A
I
C
=-
1mA
I
E
=-
50
A
V
CB
=-
60V
V
EB
=-
6V
V
CE
=-
6V, I
C
=-
1mA
V
CE
=-
12V, I
E
=
2mA, f
=
100MHz
I
C
/I
B
=-
50mA/
-
5mA
V
CB
=-
12V, I
E
=
0A, f
=
1MHz
V
V
nA
nA
-
mV
MHz
pF
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance









EML11 / UML11N
Transistors
Rev.B
Electrical characteristic curves
Di1
FORWARD VOLTAGEVF(mV)
VF-IF CHARACTERISTICS
FO
RW
AR
D
C
U
RR
EN
T
:
I
F
(
m
A
)
1000
0.01
0.1
1
10
100
1000
10000
100000
0
10
20
30
CA
PACITAN
C
E B
E
TWEE
N
TERMINALS:Ct(
p
F)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
1
10
100
0
5
10
15
20
f=1MHz
Ta=125
Ta=75
Ta=25
Ta=-25
R
E
VE
RS
E

C
U
RRE
NT:
I
R(u
A
)
REVERSE VOLTAGEVR(V)
VR-IR CHARACTERISTICS
0.001
0.1
1
10
100
0
100
200
300
400
500
Ta=125
Ta=75
Ta=25
Ta=-25






0.01






Tr2
-0.2
COLLECTOR CURRENT : Ic
(mA)
-50
-20
-10
-5
-2
-1
-0.5
-0.2
-0.1
-0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
V
CE
=
-
6V
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Grounded emitter propagation
characteristics
Ta = 100
C
25
C
-
40
C
-0.4
-4
-8
-1.2
0
-2
-6
-10
-0.8
-1.6
-2.0
-3.5
A
-7.0
-10.5
-14.0
-17.5
-21.0
-24.5
-28.0
-31.5
I
B
= 0
Ta = 25
C
-35.0
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.2 Grounded emitter output
characteristics (
)
-40
-80
-5
-3
-4
-2
-1
-20
-60
-100
0
I
B
= 0
Ta = 25
C
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.3 Grounded emitter output
characteristics (
)
-50
A
-100
-150
-200
-250
-500
-450
-400
-350
-300

500
200
100
50
-0.2
-0.5
-1
-2
-5
-10
-20
-50 -100
DC CURRENT GAIN : h
FE
Ta = 25
C
V
CE
= -5V
-3V
-1V
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs. collector
current (
)
500
200
100
50
-0.2
-0.5
-1
-2
-5
-10
-20
-50 -100
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.5 DC current gain vs. collector
current (
)
V
CE
= -6V
Ta = 100
C
-40
C
25
C
-0.1
-0.2
-0.5
-1
-2
-5
-10
-20
-50 -100
-1
-0.5
-0.2
-0.05
Ta = 25
C
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V
)
COLLECTOR CURRENT : I
C
(mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current (
)
I
C
/I
B
= 50
20
10




3/4
EML11 / UML11N
Transistors
Rev.B

-0.1
-0.2
-0.5
-1
-2
-5
-10
-20
-50 -100
-1
-0.5
-0.2
-0.05
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V
)
COLLECTOR CURRENT : I
C
(mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current (
)
l
C
/l
B
= 10
Ta = 100
C
25
C
-40
C
50
100
0.5
20
50
100
200
500
1000
1
2
5
10
EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
Fig.8 Gain bandwidth product vs.
emitter current
Ta = 25
C
V
CE
= -12V
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR OUTPUT CAPACITANCE : Cob (
pF
)
EMITTER INPUT CAPACITANCE : Cib (
pF
)
Collector output capacitance vs.
Emitter input capacitance vs.
collector-base voltage
emitter-base voltage
Fig.9
-0.5
-20
2
5
10
-1
-2
-5
-10
20
Cib
Cob
Ta = 25
C
f
= 1MHz
I
E
= 0A
I
C
= 0A
4/4
Appendix
Appendix1-Rev1.1


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The contents described herein are subject to change without notice. The specifications for the
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