EMF17 / UMF17N
Transistors
1/4
Power management (dual transistors)
EMF17 / UMF17N
2SA1774 and DTC123EE are housed independently in a EMT or UMT package.
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Application
Power management circuit
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Features
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
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Structure
Silicon epitaxial planar transistor
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Equivalent circuits
R
1
R
2
DTr2
Tr1
(1)
(2)
(3)
(4)
(5)
(6)
R
1
=2.2k
R
2
=2.2k
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External dimensions (Units : mm)
ROHM : EMT6
EMF17
ROHM : UMT6
EIAJ : SC-88
UMF17N
Abbreviated symbol :F17
Abbreviated symbol : F17
0.22
1.2
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0.13
0.5
0.5
0.5
1.0
1.6
Each lead has same dimensions
0to0.1
( 6
)
2.0
1.3
0.9
0.15
0.7
0.1Min.
2.1
0.65
0.2
1.25
( 1
)
0.65
( 4
)
( 3
)
( 2
)
( 5
)
Each lead has same dimensions
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Package, marking, and packaging specifications
Type
UMF17N
UMT6
F17
TR
3000
Package
Marking
Code
Basic ordering unit(pieces)
EMF17
EMT6
F17
T2R
8000
EMF17 / UMF17N
Transistors
2/4
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Absolute maximum ratings (Ta=25
C)
Tr1
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Tj
Tstg
P
C
Limits
-
60
-
50
-
6
-
150
150
-
55~+150
150 (TOTAL)
Unit
V
V
V
mA
C
C
mW
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector power dissipation
120mW per element must not be exceeded.
DTr2
Parameter
1 Characteristics of built-in transistor.
2 Each terminal mounted on a recommended land.
Symbol
V
CC
V
IN
I
C
I
O
P
C
Tj
Tstg
Limits
50
-
10~
+
20
100
100
150(TOTAL)
150
-
55~
+
150
1
2
Unit
V
V
mA
mA
mW
C
C
Supply voltage
Input voltage
Collector current
Output current
Power dissipation
Junction temperature
Range of storage temperature
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Electrical characteristics (Ta=25
C)
Tr1
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
-
60
-
50
-
6
-
-
120
-
-
-
-
-
-
-
-
-
-
140
4
-
-
-
-
0.1
-
0.1
560
-
0.5
-
5
V
I
C
=
-
50
A
I
C
=
-
1mA
I
E
=
-
50
A
V
CB
=
-
60V
V
EB
=
-
6V
V
CE
=
-
6V, I
C
=
-
1mA
V
CE
=
-
12V, I
E
= 2mA, f = 100MHz
I
C
/I
B
=
-
50mA/
-
5mA
V
CB
=
-
12V, I
E
= 0A, f = 1MHz
V
V
A
A
-
V
MHz
pF
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
DTr2
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Transition frequency
f
T
-
250
-
1.54
2.86
MHz
V
CE
=
10V, I
E
=-
5mA, f
=
100MHz
Characteristics of built-in transistor.
V
I(off)
-
-
0.5
V
V
CC
=
5V, I
O
=
100
A
Input voltage
V
I(on)
3.0
-
-
V
V
O
=
0.3V, I
O
=
20mA
V
O(on)
-
100
300
mV
V
O
=
10mA, I
I
=
0.5mA
Output voltage
I
I
-
-
3.8
mA
V
I
=
5V
Input current
I
O(off)
-
-
0.5
A
V
CC
=
50V, V
I
=
0V
Output current
R
1
2.2
k
-
Input resistance
G
I
20
-
-
-
V
O
=
5V, I
O
=
20mA
DC current gain
-
R
2
/R
1
0.8
1.0
1.2
-
Resistance ratio
EMF17 / UMF17N
Transistors
3/4
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Electrical characteristic curves
Tr1
-0.2
COLLECTOR CURRENT : Ic
(mA)
-50
-20
-10
-5
-2
-1
-0.5
-0.2
-0.1
-0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
V
CE
=
-
6V
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Grounded emitter propagation
characteristics
Ta = 100
C
25
C
-
40
C
-0.4
-4
-8
-1.2
0
-2
-6
-10
-0.8
-1.6
-2.0
-3.5
A
-7.0
-10.5
-14.0
-17.5
-21.0
-24.5
-28.0
-31.5
I
B
= 0
Ta = 25
C
-35.0
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.2 Grounded emitter output
characteristics (
)
-40
-80
-5
-3
-4
-2
-1
-20
-60
-100
0
I
B
= 0
Ta = 25
C
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.3 Grounded emitter output
characteristics (
)
-50
A
-100
-150
-200
-250
-500
-450
-400
-350
-300
500
200
100
50
-0.2
-0.5
-1
-2
-5
-10
-20
-50 -100
DC CURRENT GAIN : h
FE
Ta = 25
C
V
CE
= -5V
-3V
-1V
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs. collector
current (
)
500
200
100
50
-0.2
-0.5
-1
-2
-5
-10
-20
-50 -100
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.5 DC current gain vs. collector
current (
)
V
CE
= -6V
Ta = 100
C
-40
C
25
C
-0.1
-0.2
-0.5
-1
-2
-5
-10
-20
-50 -100
-1
-0.5
-0.2
-0.05
Ta = 25
C
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current (
)
I
C
/I
B
= 50
20
10
-0.1
-0.2
-0.5
-1
-2
-5
-10
-20
-50 -100
-1
-0.5
-0.2
-0.05
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current (
)
l
C
/l
B
= 10
Ta = 100
C
25
C
-40
C
50
100
0.5
20
50
100
200
500
1000
1
2
5
10
EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
Fig.8 Gain bandwidth product vs.
emitter current
Ta = 25
C
V
CE
= -12V
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR OUTPUT CAPACITANCE : Cob (
pF)
EMITTER INPUT CAPACITANCE : Cib (
pF)
Collector output capacitance vs.
Emitter input capacitance vs.
collector-base voltage
emitter-base voltage
Fig.9
-0.5
-20
2
5
10
-1
-2
-5
-10
20
Cib
Cob
Ta = 25
C
f
= 1MHz
I
E
= 0A
I
C
= 0A
EMF17 / UMF17N
Transistors
4/4
DTr2
100
200
500
1m
2m
5m 10m 20m
50m 100m
100
50
20
10
5
2
1
500m
200m
100m
INPUT VOLTAGE : V
I(on)
(V)
OUTPUT CURRENT : I
O
(A)
Fig.9 Input voltage vs. output current
(ON characteristics)
V
O
=0.3V
Ta=
-
40
C
25
C
100
C
INPUT VOLTAGE : V
I(off)
(V)
OUTPUT CURRENT : Io
(A)
0
3.0
10m
1
2m
5m
1m
200
500
100
20
50
10
2
5
0.5
1.0
1.5
2.0
2.5
V
CC
=5V
Ta=100
C
25
C
-
40
C
Fig.10 Output current vs. input voltage
(OFF characteristics)
OUTPUT CURRENT : I
O
(A)
DC CURRENT GAIN : G
I
Fig.11 DC current gain vs. output
current
V
O
=5V
100
200
500
1m
2m
5m 10m 20m
50m 100m
1k
500
200
100
50
20
10
5
2
1
Ta=100
C
25
C
-
40
C
100
200
500
1m
2m
5m 10m 20m
50m 100m
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
l
O
/l
I
=20
OUTPUT CURRENT : I
O
(A)
OUTPUT VOLTAGE : V
O (on)
(V)
Ta=100
C
25
C
-
40
C
Fig.12 Output voltage vs. output
current
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