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Электронный компонент: RB521S-40

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RB521S-40
Diodes
1/3
Schottky barrier diode
RB521S-40

Applications
Rectifying small power


Features
1) Ultra small mold type. (EMD2)
2) Low V
F
3) High reliability
Construction
Silicon epitaxial planar

External dimensions (Unit : mm)












Land size figure (Unit : mm)
ROHM : EMD2
JEITA : SC-79
JEDEC :SOD-523
dot (year week factory)
0.120.05
0.60.1
0.30.05
0.80.05
1.
2
0.
05
1.
6
0.
1
EMD2
0.8
1.
7
0.
6







Structure


Taping dimensions (Unit : mm)



0.950.06
0
4.00.1
4.00.1
2.00.05
1.50.05
3.
5
0.
05
1.
75
0
.
1
8.
0
0.
15
0.20.05
0.760.05
1.
26
0.
05

0
0.5
0.
6
2.00.05
1.
3
0.
06
0
2.
45
0.
1
0.2
Empty pocket






Absolute maximum ratings (Ta=25
C)
Symbol
Unit
VRM
V
V
R
V
Io
mA
I
FSM
A
Tj
Tstg





Electrical characteristic (Ta=25
C)

Reverse voltage (repetitive peak)
everse voltage (DC)
rage rectified forward current
nction temperature
rward current surge peak
60Hz
1cyc
-55 to +150
torage temperature
Limits
45
40
200
4
150
Parameter
R
Ave
Ju
Fo
S
Symbol
Min.
Typ.
Max.
Unit
0.16
0.26
0.30
IF=10mA
0.31
0.40
0.45
IF=100mA
0.41
0.50
0.54
IF=200mA
-
2.50
20.00
VR=10V
-
6.00
90.00
VR=40V
C=100
P
F,R=1.5
K
forward and reverse : 1 time
Conditions
Parameter
Forward voltage
ESD
10
-
-
ESD break down voltage
A
K
V
Reverse current
IR
V
F
V
RB521S-40
Diodes
2/3
Electrical characteristic curves

0.01
0.1
1
10
100
1000
10000
100000
0
10
20
30
Ta=125
Ta=75
Ta=25
Ta=-25
Ta=150
FORWARD VOLTAGEVF(mV)
VF-IF CHARACTERISTICS
FOR
W
A
R
D

CU
RR
E
N
T:
I
F
(m
A)
RE
VE
RSE

CU
R
R
E
N
T:
IR(
u
A)
REVERSE VOLTAGEVR(V)
VR-IR CHARACTERISTICS
CA
P
A
C
I
TANC
E
BET
W
EEN
TERM
INALS:
Ct(
p
F)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
F
O
RW
AR
D
VO
LTA
G
E
:
VF(
m
V)
REVERSE
CUR
R
ENT:VR
(
u
A)
IR DISPERSION MAP
C
A
P
A
CITA
NCE
BE
T
W
EEN
TERM
INAL
S:Ct(
p
F
)
Ct DISPERSION MAP
IFSM DISPERSION MAP















































PE
A
K

S
U
R
G
E
FO
RW
ARD

CU
R
R
E
N
T:
I
F
SM
(A
)
PE
A
K

S
U
R
G
E
FO
RW
ARD

CU
R
R
E
N
T:
I
F
SM
(A
)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PE
A
K

S
U
R
G
E
FO
RW
ARD

CU
R
R
E
N
T:
I
F
SM
(A
)
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:(s)
Rth-t CHARACTERISTICS
TR
A
N
S
I
E
N
T
THAER
M
AL

I
MPED
ANCE:R
t
h
(
/
W
)
FOR
W
A
R
D

PO
WE
R
D
I
SSIP
A
TIO
N
:Pf
(
W
)
AVERAGE RECTIFIED
FORWARD CURRENTIo(A)
Io-P CHARACTERISTICS
RE
VE
RSE

P
O
W
E
R
D
I
SSIP
A
TI
ONP
R
(w)
REVERSE VOLTAGEVR(V)
VR-P
R
CHARACTERISTICS
1
10
100
1000
0
100
200
300
400
500
600
Ta=125
Ta=75
Ta=25
Ta=-25
Ta=150
470
480
490
500
510
520
Ta=25
IF=200mA
n=30pcs
AVE:495.2mV
0
10
20
30
40
50
60
70
80
90
100
Ta=25
VR=40V
n=30pcs
AVE:6.86uA
20
21
22
23
24
25
26
27
28
29
30
AVE:27.2pF
0
5
10
15
20
AVE:5.60A
0
5
10
1
10
100
8.3ms
Ifsm
1cyc
8.3ms
0
5
10
1
10
100
t
Ifsm
10
100
1000
0.001
0.1
10
1000
Rth(j-a)
Rth(j-c)
1ms
IM=1mA
IF=20mA
300us
time
Mounted on epoxy board
0
0.05
0.1
0.15
0.2
0.25
0.3
0
0.1
0.2
0.3
0.4
0
1
2
3
4
5
0
10
20
30
40
Sin(180)
D=1/2
DC
1
10
100
0
10
20
30
Ta=25
f=1MHz
VR=0V
n=10pcs
f=1MHz
8.3ms
Ifsm
1cyc
DC
D=1/2
Sin(180)
RB521S-40
Diodes
3/3












AMBIENT TEMPERATURETa()
Derating Curve(Io-Ta)
AV
E
R
AG
E
RECTI
F
IED
F
O
RW
AR
D
C
U
RRE
N
T

I
o
(
A
)
AV
E
R
AG
E
RECTI
F
IED
F
O
RW
AR
D
C
U
RRE
N
T

I
o
(
A
)
CASE TEMPARATURETc()
Derating Curve(Io-Tc)
0
0.1
0.2
0.3
0.4
0.5
0
25
50
75
100
125
150
Sin(180)
D=1/2
DC
0
0.1
0.2
0.3
0.4
0.5
0
25
50
75
100
125
150
Sin(180)
D=1/2
DC
T
Tj=150
D=t/T
t
VR
Io
VR=20V
0A
0V
T
Tj=150
D=t/T
t
VR
Io
VR=20V
0A
0V
Appendix
Appendix1-Rev1.1


The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
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otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.