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Электронный компонент: QS5U23

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QS5U23
Transistor
1/4
Small switching (20V, 1.5A)
QS5U23
Features
1) The QS5U23 conbines Pch MOSFET with a
Schottky barrier diode in a single TSMT5 package.
2) Pch MOSSFET have a low on-state resistance
with a fast switching.
3) Pch MOSFET is reacted a low voltage drive(2.5V)
4) The independently connected Schottky barrier diode
have a low forward voltage.
Applications
External dimensions (Units : mm)
Each lead has same dimensions
Abbreviated symbol : U23
(1)
(2)
(5)
(3)
(4)
0.95
0.95
0.4
+
0.1
-
0.05
1.9
+
-
0.2
2.9
+
-
0.1
1.6
+
0.2
-
0.1
2.8
+
-
0.2
0.16
+
0.1
-
0.06
0
0.1
0.3
0.6
0.7
+
-
0.1
0.85
+
-
0.1
1.0MAX
Load switch , DC/DC conversion
Structure
Silicon P-channel MOSFET
Schottky Barrier DIODE
Packaging specifications
Taping
QS5U23
Type
TR
3000
Package
Basic ordering unit
(pieces)
Code
Equivalent circuit
(1)
1 ESD PROTECTION DIODE
(1)ANODE
(2)SOURCE
(3)GATE
(4)DRAIN
(5)CATHODE
(2)
(3)
(4)
(5)
2 BODY DIODE
1
2
Absolute maximum ratings (Ta=25
C)
Parameter
V
DSS
V
GSS
Tch
I
D
I
SP
I
DP
Symbol
-
20
12
1.5
6.0
-
0.75
-
3.0
150
Limits
Unit
Drain
-
source voltage
Gate
-
source voltage
Drain current
Source current
Channel temperature
Continuous
Pulsed
Continuous
Pulsed
I
S
< MOSFET >
< Di >
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
V
RM
V
R
I
F
I
FSM
Tj
30
20
0.5
2.0
125
Pw
<
=
<
=
10
< MOSFET AND Di >
s, Duty cycle 1%
60Hz / 1CYC
Total power dissipation
Range of strage temperature
P
D
Tstg
1.0
-
40
125
W / TOTAL MOUNTED ON
A CERAMIC BOARD
V
V
A
A
C
A
A
V
V
A
A
C
C
(Body diode)
Pw
<
=
<
=
10
s, Duty cycle 1%
Junction temperature
QS5U23
Transistor
2/4
Electrical characteristics (Ta=25
C)
Parameter
Symbol
I
GSS
V
(BR)DSS
I
DSS
V
GS(th)
R
DS(on)
C
iss
Y
fs
C
oss
C
rss
Min.
-
-
20
-
-
0.7
-
-
1.0
-
-
-
-
-
-
160
325
-
60
40
10
-
-
1
-
2.0
200
-
260
340
-
-
-
-
A
V
GS
=
12V
/
V
DS
=0V
I
D
=
-
1mA
/
V
GS
=0V
V
DS
=
-
20V
/
V
GS
=0V
V
DS
=
-
10V, I
D
=
-
0.75A
V
DS
=
-
10V
/
I
D
=
-
1mA
I
D
=
-
1.5A, V
GS
=
-
4.5V
I
D
=
-
0.75A, V
GS
=
-
2.5V
V
DS
=
-
10V
V
GS
=0V
f
=1MHz
V
A
V
m
m
pF
S
pF
pF
t
d(on)
-
10
-
I
D
=
-
0.75A
ns
t
r
-
4.2
-
nC
t
d(off)
-
1.0
-
nC
t
f
-
1.1
-
nC
Typ.
Max.
Unit
Conditions
Gate-source leakage
Gate threshold voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn
-
on delay time
Turn off delay time
Gate
-
drain charge
Fall time
Drain-source breakdown voltage
Static drain
-
source
on
-
state resistance
Zero gate voltage drain current
Pulsed
-
180
240
m
I
D
=
-
1.5A, V
GS
=
-
4V
Pulsed
Pulsed
Rise Time
Pulsed
Pulsed
Pulsed
Total gate charge
10
35
10
ns
ns
ns
V
DD
V
GS
=
-
4.5V
R
L
=20
R
GS
=10
Qg
Qgs
Qgd
Gate
-
source charge
< MOSFET >
< MOSFET >Body diode(source
-
drain)
Forward voltage
VSD
-
-
-
-
-
-
-
-
-
1.2
V
I
S
=
-
0.75A
/
V
GS
=0V
< Di >
Foward voltage drop
Reverse leakage
V
F
I
R
-
-
-
-
-
-
0.36
0.47
100
V
V
A
I
F
=0.1A
I
F
=0.5A
V
R
=20V
V
GS
=
-
4.5V
I
D
=
-
1.5A
V
DD
-
15V
-
15
QS5U23
Transistor
3/4
Electrical characteristic curves
Fig.1 Typical Transfer Characteristics
0
0.5
1.0
0.001
0.1
1
0.01
10
1.5
Gate
-
Source Voltage
:
V
GS
[
V
]
Drain Current :
-
I
D
(A)
2.0
2.5
3.0
3.5
4.0
Ta
=
125
C
75
C
25
C
-
25
C
V
DS
=-
10V
pulsed
Fig.2 Static Drain
-
Source On
-
State
Resistance
0.1
1
10
100
1000
10
Drain Current
:
-
I
D
[
A
]
Static Drain
-
Source On
-
State Resistance
75 C
25 C
-
25 C
Ta=125 C
R
DS
(
on
)[
m
]
vs. Drain Current
V
GS
=-
4.5V
pulsed
Fig.3 Static Drain
-
Source On
-
State
Resistance
0.1
1
10
100
1000
10
Drain Current
:
-
I
D
[
A
]
Static Drain
-
Source On
-
State Resistance
R
DS
(
on
)[
m
]
vs. Drain Current
Ta=125 C
75 C
25 C
-
25 C
V
GS
=-
4V
pulsed
Fig.4 Static Drain
-
Source On
-
State
0.1
1
10
100
1000
10
Drain Current
: -
I
D
[
A
]
Static Drain
-
Source On
-
State Resistance
Ta=125 C
75 C
25 C
-
25 C
R
DS
(
on
)[
m
]
Resistance vs. Drain
-
Current
V
GS
=-
2.5V
pulsed
10
0
12
8
4
2
6
0
Static Drain
-
Source On
-
State Resistance
Gate
-
Source Voltage
: -
V
GS
[
V
]
50
100
150
200
250
300
350
400
I
D=
-
0
.
75A
-
1
.
5A
R
DS
(
on
)
[m
]
Fig.5 Static Drain
-
Source On
-
State
Resistance vs.Gate
-
Source Voltage
Ta
=
25 C
pulsed
Fig.6 Static Drain
-
Source On
-
State
0.1
1
10
100
1000
10
Drain Current
: -
I
D
[
A
]
Static Drain-Source On
-
State Resistance
Resistance vs. Drain Current
R
DS
(
on
)[
m
]
VGS=
-
2
.
5V
-
4
.
0V
-
4
.
5V
Ta
=
25 C
pulsed
0
0.5
1.0
1.5
Source
-
Drain Voltage
: -
V
SD
[
V
]
Fig.7 Reverse Drain Current
0.01
Reverse Drain Current
: -
I
DR
[
A
]
0.1
10
1
2.0
Ta=125 C
75 C
25 C
-
25 C
VS. Source-Drain Current
V
GS
=
0V
pulsed
0.01
0.1
1
10
100
Drain
-
Source Voltage
: -
V
DS
[
V
]
Fig.8 Typical Capactitance
10
100
10000
1000
vs. Drain
-
Source Voltage
Capacitance
:
C
[
pF
]
Ciss
Coss
Crss
Ta
=
25 C
f
=
1MHz
V
GS
=
0V
0.01
0.1
1
10
Drain Current
: -
I
D
[
A
]
Fig.9 Switching Characteristics
1
10
1000
100
td
(
off
)
td
(
on
)
tr
tf
Switching Time
:
t
[
ns
]
Ta
=
25 C
V
DD
=-
15V
V
GS
=-
4.5V
R
G
=
10
pulsed
QS5U23
Transistor
4/4
Fig.10 Dynamic Input Characteristics
0
1
0
4
8
6
Total Gate Charge
:
Qg
[
nC
]
Gate-Source Voltage: -V
GS
[
V
]
2
3
4
5
1
2
3
5
6
7
Ta
=
25 C
V
DD
=-
15V
I
D
=-
1.5A
R
G
=
10
pulsed
Forward Voltage
:
V
F
[
V
]
Fig.11 Forward Temperature Characteristics
Forward Current
:
I
F
[
mA
]
0.1
1
10
100
1000
0
0.1
0.2
0.3
0.4
0.5
0.6
Ta=125 C
75 C
25 C
-
25 C
Reverse Voltage
:
V
R
[
V
]
Fig.12 Reverse Temperature Characteristics
Reverse Current
:
I
R
[
A
]
0.0001
0.001
0.01
0.1
100
10
1
0
10
20
30
40
125 C
75 C
25 C
-
25 C
Measurement circuits
Fig.13 Switching Time Measurement Circuit
V
GS
R
G
V
DS
D.U.T.
I
D
R
L
V
DD
90%
10%
90%
10%
10%
V
GS
V
DS
90%
t
f
t
off
t
d(off)
t
r
t
on
t
d(on)
Fig.14 Switching Waveforms
50%
50%
Pulse Width
Fig.15 Gate Charge Measurement Circuit
V
GS
R
G
V
DS
D.U.T.
I
D
R
L
V
DD
I
G
(Const)
Fig.16 Gate Charge Waveforms
V
GS
Qg
Qgs
Qgd
V
G
Charge
Appendix
Appendix1-Rev1.0


The products listed in this document are designed to be used with ordinary electronic equipment or devices
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appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
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Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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Products listed in this document use silicon as a basic material.
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