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Электронный компонент: QS5U21

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QS5U21
Transistor
1/4
Small switching (20V, 1.5A)
QS5U21
Features
1) The QS5U21 conbines Pch MOSFET with a
Schottky barrier diode in a single TSMT5 package.
2) Pch MOSFET have a low on-state resistance
with a fast switching.
3) Pch MOSFET is reacted a low voltage drive(2.5V)
4) The Independently connected Schottky barrier diode
have a low forward voltate.
Applications
Load switch, DC/DC conversion
External dimensions (Units : mm)
1.6
2.8
(4)
(2)
(5)
(3)
(1)
0.16
0.95 0.95
1.9
2.9
0.4
Abbreviated symbole : U21
-
0.05
+
0.1
0.2 0.1
0.2
+
-
+
0.2
-
0.1
Each lead has same dimensions
0.3 to
0.6
1.0MAX
0.85
+
0.1
0.7
+
-
0.1
0 to 0.1
+ -
+ -
-
+
0.1
-
0.06
Structure
Silicon P-channel MOSFET
Schottky Barrier DIODE
Packaging specifications
Taping
QS5U21
Type
TR
3000
Package
Basic ordering unit
(
pieces
)
Code
Equivalent circuit
(1)
(2)
(3)
(4)
(5)
1
(
1
)
ANODE
(
2
)
SOURCE
(
3
)
GATE
(
4
)
DRAIN
(
5
)
CATHODE
2
1 ESD PROTECTION DIODE
2 BODY DIODE
Absolute maximum ratings (Ta=25
C)
VDSS
VGSS
IS
Tch
ID
ISP
IDP
Tstg
-
20
12
-
0.75
-
0.3
150
DRAIN
-
SOURCE VOLTAGE
GATE
-
SOURCE VOLTAGE
DRAIN CURRENT
SOURCE CURRENT
TOTAL POWER DISSIPATION
CHANNEL TEMPERATURE
RANGE OF STRAGE TEMPERATURE
CONTINUOUS
PULSED
CONTINUOUS
PULSED
1.5
6.0
< Di >
VRM
25
REVERSE VOLTAGE
VR
20
FORWARD CURRENT
IF
1.0
FORWARD CURRENT SURGE PEAK
JUNCTION TEMPERATURE
IFSM
3.0
Tj
< MOSFET AND Di >
125
PD
1.0
-
40
125
< MOSFET >
(
BODY DIODE
)
60HZ / 1CYC.
REPETITIVE PEAK REVERSE VOLTAGE
Parameter
Symbol
V
V
A
V
V
A
A
W/TOTAL/MOUNTED ON
A CERAMIC BOARD
Limits
Unit
PW 10
s DUTY CYCLE 1%
<
=
<
=
A
A
A
PW 10
s DUTY CYCLE 1%
<
=
<
=
C
C
C
QS5U21
Transistor
2/4
Electrical characteristics (Ta=25
C)
Parameter
Symbol
I
GSS
V
(BR)DSS
I
DSS
V
GS(th)
R
DS(on)
C
iss
Y
fs
C
oss
C
rss
Min.
-
-
20
-
-
0.7
-
-
1.0
-
-
-
-
-
-
160
325
-
60
40
10
-
-
1
-
2.0
200
-
260
340
-
-
-
-
A
V
GS
=
12V
/
V
DS
=0V
I
D
=
-
1mA
/
V
GS
=0V
V
DS
=
-
20V
/
V
GS
=0V
V
DS
=
-
10V, I
D
=
-
0.75A
V
DS
=
-
10V
/
I
D
=
-
1mA
I
D
=
-
1.5A, V
GS
=
-
4.5V
I
D
=
-
0.75A, V
GS
=
-
2.5V
V
DS
=
-
10V
V
GS
=0V
f
=1MHz
V
A
V
m
m
pF
S
pF
pF
t
d(on)
-
10
-
I
D
=
-
0.75A
ns
t
r
-
4.2
-
nC
t
d(off)
-
1.0
-
nC
t
f
-
1.1
-
nC
Typ.
Max.
Unit
Conditions
Gate-source leakage
Gate threshold voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn
-
on delay time
Turn off delay time
Gate
-
drain charge
Fall time
Drain-source breakdown voltage
Static drain
-
source
on
-
state resistance
Zero gate voltage drain current
Pulsed
-
180
240
m
I
D
=
-
1.5A, V
GS
=
-
4V
Pulsed
Pulsed
Rise Time
Pulsed
Pulsed
Pulsed
Total gate charge
10
35
10
ns
ns
ns
V
DD
V
GS
=
-
4.5V
R
L
=20
R
GS
=10
Qg
Qgs
Qgd
Gate
-
source charge
< MOSFET >
< MOSFET >Body diode(source
-
drain)
Forward voltage
VSD
-
-
-
-
-
-
-
-
-
1.2
V
I
S
=
-
0.75A
/
V
GS
=0V
< Di >
Foward voltage drop
Reverse leakage
V
F
I
R
-
-
-
-
0.45
200
V
A
I
F
=1.0A
V
R
=20V
V
GS
=
-
4.5V
I
D
=
-
1.5A
V
DD
-
15V
-
15
QS5U21
Transistor
3/4
Electrical characteristic curves
Fig.1 Typical Transfer Characteristics
0
0.5
1.0
0.001
0.1
1
0.01
10
1.5
Gate
-
Source Voltage
:
V
GS
[
V
]
Drain Current :
-
I
D
(A)
2.0
2.5
3.0
3.5
4.0
Ta
=
125
C
75
C
25
C
-
20
C
V
DS
=
-
10V
Pulsed
Fig.2 Static Drain
-
Source On
-
State
Resistance
0.1
1
10
100
1000
10
Drain Current
:
-
I
D
[
A
]
Static Drain
-
Source On
-
State Resistance
75 C
25 C
-
25 C
Ta=125 C
R
DS
(
on
)[
m
]
vs.Drain Current
V
GS
=
-
4.5V
Pulsed
Fig.3 Static Drain
-
Source On
-
State
Resistance
0.1
1
10
100
1000
10
Drain Current
:
-
I
D
[
A
]
Static Drain
-
Source On
-
State Resistance
R
DS
(
on
)[
m
]
vs.Drain Current
V
GS
=
-
4V
Pulsed
Ta=125 C
75 C
25 C
-
25 C
Fig.4 Static Drain
-
Source On
-
State
0.1
1
10
100
1000
10
Drain Current
: -
I
D
[
A
]
Static Drain
-
Source On
-
State Resistance
Ta=125 C
75 C
25 C
-
25 C
R
DS
(
on
)[
m
]
Resistance vs.Drain
-
Current
V
GS
=
-
2.5V
Pulsed
10
0
12
8
4
2
6
0
Static Drain
-
Source On
-
State Resistance
Gate
-
Source Voltage
: -
V
GS
[
V
]
Fig.5 Static Drain
-
Source On
-
State
50
100
150
200
250
300
350
400
I
D=
-
0
.
75A
-
1
.
5A
R
DS
(
on
)
[m
]
vs.Gate
-
Source Voltage
Resistance
Ta=25 C
Pulsed
Fig.6 Static Drain
-
Source On
-
State
Resistance
0.1
1
10
100
1000
10
Drain Current
: -
I
D
[
A
]
Static Drain-Source On
-
State Resistance
vs.Drain Current
R
DS
(
on
)[
m
]
VGS=
-
2
.
5V
-
4
.
0V
-
4
.
5V
Ta=25 C
Pulsed
0
0.5
1.0
1.5
Source
-
Drain Voltage
: -
V
SD
[
V
]
Fig.7 Reverse Drain Current
0.01
Reverse Drain Current
: -
I
DR
[
A
]
0.1
10
1
2.0
Ta=125 C
75 C
25 C
-
25 C
vs. Source-Drain Current
V
GS
=0V
Pulsed
0.01
0.1
1
10
100
Drain
-
Source Voltage
: -
V
DS
[
V
]
Fig.8 Typical Capactitance
10
100
10000
1000
vs.Drain
-
Source Voltage
Capacitance
:
C
[
pF
]
Ciss
Coss
Crss
Ta=25 C
f=1MHZ
V
GS
=0V
0.01
0.1
1
10
Drain Current
: -
I
D
[
A
]
Fig.9 Switching Characteristics
1
10
1000
100
td
(
off
)
td
(
on
)
tr
tf
Switching Time
:
t
[
ns
]
Ta=25 C
V
DD
=
-
15V
V
GS
=
-
4.5V
R
G
=10
Pulsed
QS5U21
Transistor
4/4
Fig.10 Dynamic Input Characteristics
0
1
0
4
8
6
Total Gate Charge
:
Qg
[
nC
]
Gate-Source Voltage: -V
GS
[
V
]
2
3
4
5
1
2
3
5
6
7
Ta=25 C
V
DD
=
-
15V
I
D
=
-
2.5A
R
G
=10
Pulsed
Forward Voltage
:
V
F
[
V
]
Fig.11 Forward Temperature Characteristics
Forward Current
:
I
F
[
mA
]
0.1
1
10
100
1000
0
0.1
0.2
0.3
0.4
0.5
0.6
Ta=125 C
75 C
25 C
-
25 C
Reverse Voltage
:
V
R
[
V
]
Fig.12 Reverse Temperature Characteristics
Reverse Current
:
I
R
[
A
]
0.0001
0.001
0.01
0.1
100
10
1
0
10
20
30
40
125 C
75 C
25 C
-
25 C
Measurement circuits
Fig.13 Switching Time Measurement Circuit
V
GS
R
G
V
DS
D.U.T.
I
D
R
L
V
DD
90%
10%
90%
10%
10%
V
GS
V
DS
90%
t
f
t
off
t
d(off)
t
r
t
on
t
d(on)
Fig.14 Switching Waveforms
50%
50%
Pulse Width
Fig.15 Gate Charge Measurement Circuit
V
GS
R
G
V
DS
D.U.T.
I
D
R
L
V
DD
I
G
(Const)
Fig.16 Gate Charge Waveforms
V
GS
Qg
Qgs
Qgd
V
G
Charge