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Электронный компонент: PTZ6.8B

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PTZ7.5B
Diodes
Rev.B 1/4
Zener diode
PTZ7.5B

Applications
External dimensions
(Unit : mm)
Land size figure
(Unit : mm)
Voltage regulation
PMDS
2.0
4.
2
2.
0
0.10.02
0.1
2.60.2
2.00.2
5.
0
0.
3
1.
2
0.
3
4
.
5
0.
03
2
0.
05
1.03
0.25
0.5
0.20.01
4
.
5
0.
03
2.60.03
1.
0
3
0.
25
0
.
5
0.
2
1.50.2
ROHM : PMDS
JEDEC : SOD-106
Manufacture Date
4
5

Features
1) Small power mold type. (PMDS)
2) High ESD tolerance


Construction
Silicon epitaxial planar
Structure


Taping dimensions
(Unit : mm)
8.00.1
2.90.1
4.00.1
2.00.05
1.550.1
0
5.
5
0.
0
5
1.
75
0
.
0
5
1
2
.0
0
.3
2.40.1
1.550.05
9.
5
0
.
1
0.30.1
8.00.1
5.
3
0.
1










Sym bol
Unit
P
m
Tj
Ts tg
Param eter
Absolute maximum ratings
(Ta=25
C)
W
unction tem perature
torage tem perature
ower diss ipation
Lim its
150
-55 to +150
1000
J
S
P






PTZ7.5B
Diodes
Rev.B 2/4
Electrical characteristics
(Ta=25
C)


























Marking
(TYPE NO.)
TYP.
TYPENO.
TYP.
TYPENO.
PTZ3.6B
3.6B
PTZ8.2B
8.2B
PTZ3.9B
3.9B
PTZ9.1B
9.1B
PTZ4.3B
4.3B
PTZ10B
10B
PTZ4.7B
4.7B
PTZ11B
11B
PTZ5.1B
5.1B
PTZ12B
12B
PTZ5.6B
5.6B
PTZ13B
13B
PTZ6.2B
6.2B
PTZ15B
15B
PTZ6.8B
6.8B
PTZ16B
16B
PTZ7.5B
7.5B
MIN.
TYP.
MAX.
Iz(mA)
Max.
Iz(mA)
MAX.
VR(V)
TYP.
Iz(mA)
MIN.
Test Condition
PTZ 3.6B
3.600
3.813
4.000
40
15
40
60
1.0
-2.8
40
PTZ 3.9B
3.900
4.136
4.400
40
15
40
40
1.0
-2.4
40
PTZ 4.3B
4.300
4.572
4.800
40
15
40
20
1.0
-2.1
40
PTZ 4.7B
4.700
4.924
5.200
40
10
40
20
1.0
-1.7
40
PTZ 5.1B
5.100
5.368
5.700
40
8
40
20
1.5
-0.6
40
PTZ 5.6B
5.600
5.856
6.300
40
8
40
20
2.5
1.4
40
PTZ 6.2B
6.200
6.509
7.000
40
6
40
20
3.0
2.5
40
PTZ 6.8B
6.800
7.280
7.700
40
6
40
20
3.5
3.2
40
PTZ 7.5B
7.500
7.889
8.400
40
4
40
20
4.0
4.2
40
PTZ 8.2B
8.200
8.655
9.300
40
4
40
20
5.0
5.0
40
PTZ 9.1B
9.100
9.747
10.200
40
6
40
20
6.0
5.9
40
PTZ 10B
10.000
10.310
11.200
40
6
40
10
7.0
6.9
40
PTZ 11B
11.000
11.510
12.300
20
8
20
10
8.0
7.9
20
PTZ 12B
12.000
12.500
13.500
20
8
20
10
9.0
8.7
20
PTZ 13B
13.300
13.820
15.000
20
10
20
10
10.0
10.1
20
PTZ 15B
14.700
15.350
16.500
20
10
20
10
11.0
11.8
20
PTZ 16B
16.200
16.860
18.300
20
12
20
10
12.0
13.3
20
PTZ 18B
18.000
19.000
20.300
20
12
20
10
13.0
15.0
20
PTZ 20B
20.000
20.820
22.400
20
14
20
10
15.0
17.4
20
PTZ 22B
22.000
23.850
24.500
10
14
10
10
17.0
19.4
10
PTZ 24B
24.000
25.310
27.600
10
16
10
10
19.0
21.6
10
PTZ 27B
27.000
28.700
30.800
10
16
10
10
21.0
24.6
10
PTZ 30B
30.000
31.570
34.000
10
18
10
10
23.0
27.5
10
PTZ 33B
33.000
34.950
37.000
10
18
10
10
25.0
30.8
10
PTZ 36B
36.000
39.240
40.000
10
20
10
10
27.0
37.0
10
1.The Zener voltage(Vz) is measured 40ms after power is supplied.
2.The operating resistances(ZzZzk) are measured by superimposing a minute alternating current on the regulated current(Iz).
30kV
C=150pF
R=330
forward
and
reverse :
10 times
ESD Break down voltage : ESD(kV)
Operating resistance : Zz()
Reverse current : IR(A)
Temperature coefficiency : *z(mV/)
Zener voltage : Vz(V)
Symbol
TYP.
PTZ7.5B
Diodes
Rev.B 3/4
Electrical characteristic curves
(Ta=25
C)
PO
WE
R

D
I
S
S
I
PA
T
I
O
N
:
P
d
(
W
)
TIME:t(ms)
PRSM-TIME CHARACTERISTICS
T
E
M
P
.
C
O
E
F
F
I
CI
E
N
CE
:
z
(
/
)
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TR
A
N
S
I
E
N
T
T
H
AE
RM
A
L

I
MPE
D
A
N
C
E
:
R
t
h

(
/
W)
RE
V
E
R
S
E



S
U
RG
E

M
A
X
I
M
U
M
PO
WE
R:
P
R
S
M
(
W
)
0.1
1
10
100
1000
0.001
0.1
10
1000
Rth(j-a)
Rth(j-c)
1ms
IM=10mA
IF=0.5A
300us
time
Mounted on epoxy board
0
200
400
600
800
1000
1200
0
25
50
75
100
125
150
1
10
100
1000
10000
0.001
0.01
0.1
1
10
100
t
PRSM
0.001
0.01
0.1
1
10
100
0
5
10
15
20
25
30
35
40
45
3.6
24
20
18
16
15
13
12
11
10
9.1
8.2
7.5
5.6
6.8
6.2
5.1
4.7
4.3
3.9
36
30
27
33
22
ZEN
ER

C
U
R
R
E
N
T
:I
z
(
m
A
)
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS
-0.08
-0.06
-0.04
-0.02
0
0.02
0.04
0.06
0.08
0.1
0.12
0
10
20
30
40
-5
0
5
10
15
20
25
30
35
40
AMBIENT TEMPERATURE:Ta()
Pd-TaCHARACTERISTICS
T
E
M
P
.
C
O
E
F
F
I
CI
E
N
CE
:
z
(
m
V
/
)
PTZ7.5B
Diodes
Rev.B 4/4
100
1000
10000
0
1
2
3
4
ZENER VOLTAGEVz(V)
Vz-Iz CHARACTERISTICS
ZE
N
E
R

C
U
R
R
EN
T
:
I
z
(
m
A
)
RE
V
E
RS
E

C
U
R
R
E
N
T
:
I
R
(
n
A
)
REVERSE VOLTAGEVR(V)
VR-IR CHARACTERISTICS
CA
P
A
CI
T
A
N
C
E

B
E
T
W
E
E
N
TE
R
M
I
N
A
L
S
:
C
t
(
p
F
)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
Vz DISPERSION MAP
ZEN
ER

V
O
L
T
A
G
E
:
V
z(
V
)
RE
V
E
RS
E

C
U
RRE
N
T
:
I
R
(
n
A
)
IR DISPERSION MAP
CA
P
A
CI
T
A
N
C
E

B
E
T
W
E
E
N
TE
R
M
IN
A
L
S:
C
t
(
p
F
)
Ct DISPERSION MAP
ZENER CURRENT:Iz(mA)
Zz-Iz CHARACTERISTICS
DY
N
A
M
I
C

I
M
P
E
DA
N
C
E
:
Z
z
(
)
f=1MH
0.0001
0.001
0.01
0.1
1
10
100
1000
0
1
2
3
4
Ta=125
Ta=75
Ta=25
Ta=-25
Ta=150
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Ta=25
VR=4.0V
n=30pcs
AVE:0.150nA
20
21
22
23
24
25
26
27
28
29
30
AVE:26.29pF
Ta=25
f=1MHz
VR=0V
n=10pcs
0.001
0.01
0.1
1
10
100
6
7
8
9
10
Ta=-25
Ta=75
Ta=125
Ta=25
Ta=150
0.1
1
10
100
0.1
1
10
7.7
7.8
7.9
8
8.1
8.2
AVE:7.889V
Ta=25
IZ=40mA
n=30pcs
EL
EC
T
R
O
S
T
A
T
I
C
D
D
I
SC
H
A
R
G
E

T
E
ST

E
SD
(
K
V
)
ESD DISPERSION MAP
0
5
10
15
20
25
30
C=200pF
R=0
C=100pF
R=1.5k
C=150pF
R=330
No break at 30kV
<PTZ7.5B>

Appendix
Appendix1-Rev1.1


The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
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exploit any intellectual property rights or other proprietary rights owned or controlled by
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Products listed in this document are no antiradiation design.
About Export Control Order in Japan
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Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
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