FML9
Transistors
1/4
General purpose transistor
(isolated transistor and diode)
FML9
A 2SB1689 and a RB461F are housed independently in a UMT package.
!
!
!
!
Applications
DC / DC converter
Motor driver
!
!
!
!
Features
1) Tr : Low V
CE
(sat)
Di : Low V
F
2) Small package
!
!
!
!
Structure
Silicon epitaxial planar transistor
Schottky barrier diode
!
!
!
!
Equivalent circuit
Tr1
Di2
(5)
(4)
(3)
(2)
(1)
!
!
!
!
Packaging specifications
Type
FML9
SMT5
L9
TR
3000
Package
Marking
Code
Basic ordering unit(pieces)
!
!
!
!
External dimensions (Units : mm)
FML9
ROHM : SMT5
EIAJ : SC-74A
0~0.1
1.1
0.8
0.3Min.
0.15
1.6
2.8
2.9
0.95
1.9
( 4
)
( 5
)
( 1
)
0.3
( 3
)
0.95
( 2
)
Each lead has same dimensions
FML9
Transistors
2/4
!
!
!
!
Absolute maximum ratings (Ta=25
C)
Tr1
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pc
Tj
Tstg
Limits
-
15
-
12
-
6
-
1.5
200
150
-
40~
+
125
-
3
2
1
Unit
V
V
V
A
A
mW
C
C
1
Single pulse, Pw=1ms.
2
Each terminal mounted on a recommended land.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Di2
Parameter
Symbol
I
F
I
FSM
V
R
Tj
Tstg
Limits
700
3
20
125
-
40~
+
125
Unit
mA
A
V
C
C
Average rectified forward current
Forward current surge peak (60H
Z
,
1
)
Reverse voltage (DC)
Junction temperature
Range of storage temperature
!
!
!
!
Electrical characteristics (Ta=25
C)
Tr1
Transition frequency
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Collector output capacitance
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
V
CB
=-
10V, I
E
=
0mA, f
=
1MHz
f
T
-
400
-
MHz
V
CE
=-
2V, I
E
=
200mA, f
=
100MHz
BV
CEO
-
12
-
-
V
I
C
=-
1mA
BV
CBO
-
15
-
-
V
I
C
=-
10
A
BV
EBO
-
6
-
-
V
I
E
=-
10
A
I
CBO
-
-
-
100
nA
V
CB
=-
15V
I
EBO
-
-
-
100
nA
V
EB
=-
6V
V
CE(sat)
-
-
110
-
200
mV
I
C
=-
500mA, I
B
=-
25mA
h
FE
270
-
680
-
V
CE
=-
2V, I
C
=-
200mA
Cob
-
12
-
pF
Di2
Parameter
Min.
Typ.
Max.
Unit
Conditions
-
490
-
mV
I
F
=700mA
V
R
=20V
Symbol
V
F
I
R
-
-
200
A
Forward voltage
Reverse current
FML9
Transistors
3/4
!
!
!
!
Electrical characteristic curves
Tr1
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
Fig.1
DC current gain vs.
collector current
10
DC CURRENT GAIN : h
FE
1000
100
Ta
=
100
C
Ta
=-
40
C
Ta
=
25
C
V
CE
=-
2V
Pulsed
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
Fig.2
Base-emitter saturation voltage
vs. collector current
0.001
0.01
10
0.1
1
I
C
/I
B
=
20/1
V
CE
=-
2V
Pulsed
Ta
=
100
C
Ta
=
100
C
Ta
=-
40
C
Ta
=-
40
C
V
BE
(sat)
V
CE
(sat)
Ta
=
25
C
Ta
=
25
C
BASE SATUATION VOLTAGE : V
BE(sat)
(V)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
Fig.3
Collector-emitter saturation voltage
vs. collector current
0.001
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
0.01
0.1
1
Ta
=
25
C
Pulsed
I
C
/I
B
=
10/1
I
C
/I
B
=
20/1
I
C
/I
B
=
50/1
0
0.5
1
1.5
BASE TO EMITTER CURRENT : V
BE(on)
(V)
Fig.4
Grounded emitter propagation
characteristics
0.001
COLLECTOR CURRENT : I
C
(A)
0.01
10
0.1
1
V
CE
=-
2V
Pulsed
Ta
=
100
C
Ta
=-
40
C
Ta
=
25
C
0.001
0.01
0.1
1
10
EMITTER CURRENT : I
E
(A)
Fig.5
Gain bandwidth product
vs. emitter current
10
TRANSITION FREQUENCY : f
T
(MHz)
1000
100
Ta
=
25
C
V
CE
=-
2V
f
=
100MHz
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
Fig.6 Switching time
1
10
10000
100
1000
Ta
=
25
C
V
CE
=-
5V
f
=
100MHz
tstg
tdon
tf
tr
SWITCHING TIME : (ns)
1
10
100
0.1
1
10
100
1000
f
=
1MHz
I
E
=
0mA
Ta
=
25C
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
Fig.7
Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Cib
Cob
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
0.01
0.1
1
10
100
Fig.8
Safe operation area
0.01
0.1
1
10
Ta
=
25
C
Single Pulsed
DC Operation
PW=100ms
10ms
1ms
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(A)
FML9
Transistors
4/4
Di2
0.1m
1m
10m
100m
1
10
FOR
W
ARD CURRENT :
I
F
(A)
FORWARD VOLTAGE : V
F
(V)
0
0.1
0.2
0.3
0.4
0.5
0.6
Fig.9 Forward characteristics
Ta
=
125
C
Ta
=-
25
C
Ta
=
25
C
0.1
1
10
100
1m
10m
100m
1000m
REVERSE CURRENT :
I
R
(A)
REVERSE VOLTAGE : V
R
(V)
0
10
20
30
40
50
60
70
Fig.10 Reverse characteristics
Ta
=
25
C
Ta
=-
25
C
Ta
=
125
C
PDF 
ZIP