2SC3359S
Transistors
Rev.A
1/2
Power Transistor (80V, 0.3A)
2SC3359S
Features
1) High breakdown voltage, BV
CEO
=80V
2) Low saturation voltage, typically V
CE(sat)
= 0.2V at I
B
=0.3A / 0.03A
Electrical characteristics (Ta=25
C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
80
80
5
0.3
0.3
150
-
55 to +150
Unit
V
V
V
A
W
C
C
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Absolute maximum ratings (Ta=25
C)
Symbol
Min.
Typ.
Max.
Unit
Conditions
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
h
FE
f
T
Cob
80
80
5
-
-
-
50
-
-
-
-
-
-
0.2
150
5
-
-
-
0.5
0.5
0.5
-
8
V
V
V
V
MHz
pF
I
C
=
50
A
V
CB
=
80V
V
EB
=
4V
V
C
/I
CB
=
0.3V/0.03A
V
CE
=
5V , I
E
=
-
0.01A , f
=
100MHz
V
CB
=
10V , I
E
=
0A , f
=
1MHz
I
C
=
1mA
I
E
=
50
A
A
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector outoff current
Emitter outoff current
DC current transfer ratio
Transition frequency
Output capacitance
Collector-emitter saturation voltage
V
CE(sat)
120
-
390
-
V
CE
=
3V, I
C
=
0.1A
A
Packaging specification and h
FE
Type
Package
h
FE
Code
Basic orderin unit (pieces)
2SC3359S
SPT
QR
TP
5000
2SC3359S
Transistors
Rev.A
2/2
Electrical characteristic curves
5.0
60
40
20
0
1.0
0
2.0
4.0
3.0
80
100
I
C
-COLLECTOE CURRENT (mA)
450 A
400 A
350 A
300 A
250 A
200 A
150 A
100 A
50 A
I
B
=0 A
Ta=25 C
500 A
V
CE
-COLLECTOR-EMITTER VOLTAGE (V)
Fig.1 Typical output characteristics
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
500
I
C
-COLLECTOR CURRENT (mA)
Fig.2 DC current gain vs. collector current
500
200
100
50
20
10
1000
h
FE
-DC CURRENT GAIN
Ta=25 C
V
CE
=10V
5V
3V
1V
0.1 0.2 0.5 1.0 2.0 5.0 10 20
50 100 200
1000
500
I
C
-COLLECTOR CURRENT (mA)
Fig.3 DC current gain vs. collector current
50
20
10
Ta=25 C
500
200
100
1000
h
FE
-DC CURRENT GAIN
V
CE
=5V
Ta=125 C
25 C
-40 C
1000
20
50 100 200 500
0.3
0.2
0.1
0
1
2
5
10
I
C
-COLLECTOR CURRENT (mA)
Fig.4 Collector emitter saturation voltage
vs. collector current
V
CE
(sat) COLLECTOR EMITTER
SATURATION VOLTAGE (V)
I
C
/ I
B
=10
Ta=25 C
Ta=125 C
25 C
-40 C
1.6
1.8
1.0
1.2
1.4
0.2
0.4
0.6
0.8
0
1
2
5
10 20
50 100 200 500 1000
I
C
-COLLECTOR CURRENT (mA)
Fig.5 Base emitter saturation voltage
vs. collector current
V
BE
(sat) BASE EMITTER SATURATION
VOLTAGE (V)
I
C
/ I
B
=10
Ta=25 C
Ta=-40 C
25 C
125 C
1.6
1.8
1.0
1.2
1.4
0.2
0.4
0.6
0.8
0
1
2
5
10 20
50 100 200 500 1000
I
C
-COLLECTOR CURRENT (mA)
Fig.6 Base emitter 'ON' voltage
vs. collector ccurrent
V
BE(ON)
BASE EMITTER SATURATION
VOLTAGE (V)
V
CE
=5V
Ta=25 C
Ta=-40 C
25 C
125 C
Cib
Cob
50
100
10
20
2
5
1
0.5
1
2
5
10
20
50
REVERSE BIAS VOLTAGE (V)
Fig.7 Capacitance vs. reverse bias voltage
CAPACITANCE (pF)
f=1M
Z
Ta=25 C
50
20
10
500
200
100
1000
CURRENT GAIN-BANDWIDTH
PROFUCT (MHz)
1
2
5
10 20
50 100 200 500 1000
I
C
-COLLECTOR CURRENT (mA)
Fig.8 Current gain-bandwidth product
vs. collector current
V
CE
=5V
Ta=25 C
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
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