2SB1698
Transistors
1/2
Low frequency amplifier
2SB1698
Application
Low frequency amplifier
Driver
Features
1) A collector current is large.
2) V
CE(sat)
-370mV
at I
C
=-1A / I
B
=-50mA
External dimensions
(Units : mm)
Abbreviated symbol: FL
Each lead has same dimensions
ROHM : MPT3
JEITA : SC-62
JEDEC: SOT-89
1.5
0.4
1.5
0.4
1.6
0.5
3.0
0.4
1.5
(3)
4.5
(1)
(2)
0.5
4.0
2.5
1.0
(1)Base
(2)Collector
(3)Emitter
Absolute maximum ratings
(Ta=25
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
-
30
-
30
-
6
-
1.5
500
150
-
55~
+
150
-
3
1
Unit
V
V
V
A
A
mW
C
C
2
W
2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
1 Single pulse, P
W
=
1ms
2 Mounted on a 40
+
40
+
0.7(mm)CERAMIC SUBSTRATE
Packaging specifications
2SB1698
T100
1000
Type
Package
Code
Basic ordering unit (pieces)
Taping
Electrical characteristics
(Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
V
CB
=-
10V, I
E
=
0A, f
=
1MHz
f
T
-
280
-
MHz
V
CE
=-
2V, I
E
=
100mA, f
=
100MHz
BV
CBO
-
30
-
-
V
I
C
=-
10
A
BV
CEO
-
30
-
-
V
I
C
=-
1mA
BV
EBO
-
6
-
-
V
I
E
=-
10
A
I
CBO
-
-
-
100
nA
V
CB
=-
30V
I
EBO
-
-
-
100
nA
V
EB
=-
6V
V
CE(sat)
-
-
200
-
370
mV
I
C
=-
1A, I
B
=-
50mA
h
FE
270
-
680
-
V
CE
=-
2V, I
C
=-
100mA
Cob
-
13
-
pF
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Pulsed
2SB1698
Transistors
2/2
Electrical characteristic curves
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
10
DC CURRENT GAIN : h
FE
1000
100
Ta
=
100
C
Ta
=-
40
C
Ta
=
25
C
V
CE
=-
2V
Pulsed
Fig.1 DC current gain
vs. collector current
0.1
0.01
1
0.001
0.01
0.1
10
1
COLLECTOR CURRENT : I
C
(A)
BASE SATURATION VOLTAGE : V
BE (sat)
(V)
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
Ta
=
25
C
Ta
=
25
C
Ta
=-
40
C
Ta
=-
40
C
Ta
=
100
C
Ta
=
100
C
V
BE(sat)
V
CE(sat)
I
C
/I
B
=
20/1
Pulsed
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
0.001
0.01
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
0.1
1
10
Ta
=
25
C
Pulsed
I
C
/I
B
=
10/1
I
C
/I
B
=
20/1
I
C
/I
B
=
50/1
Fig.3 Collector-emitter saturation voltage
vs. collector current
0
0.5
1
1.5
BASE TO EMITTER CURRENT : V
BE
(V)
0.001
COLLECTOR CURRENT : I
C
(A)
0.01
1
0.1
V
CE
=-
2V
Pulsed
Ta
=
100
C
Ta
=
25
C
Ta
=-
40
C
Fig.4 Grounded emitter propagation
characteristics
0.01
0.1
1
10
EMITTER CURRENT : I
E
(A)
10
TRANSITION FREQUENCY : f
T
(MHz)
1000
100
Ta
=
25
C
V
CE
=-
2V
f
=
100MHz
Fig.5 Gain bandwidth product
vs. emitter current
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
1
10
1000
100
Ta
=
25
C
V
CE
=-
5V
I
C
/I
B
=
20/1
tstg
tdon
tr
tf
Fig.6 Switching time
SWITCHING TIME : (ns)
1
10
100
0.1
1
10
100
1000
f
=
1MHz
I
C
=
0A
Ta
=
25
C
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
Cib
Cob
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
PDF 
ZIP