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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
4
8
7
6
5
VCC
GND
GND
RF IN
RF OUT
GND
GND
GND
RF2311
GENERAL PURPOSE AMPLIFIER
General Purpose High Bandwidth Gain
Blocks
IF or RF Buffer Amplifiers
Broadband Test Equipment
Final PA for Medium Power Applications
Driver Stage for Power Amplifiers
The RF2311 is a general purpose, low cost low power RF
amplifier IC. The device is manufactured on an advanced
Gallium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as an easily cas-
cadable 50
gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 1600MHz.
The gain flatness and high bandwidth make the device
suitable for many other applications as well. The device is
self-contained with 50
input and output impedances,
and no external DC biasing elements are required to
operate as specified.
DC to well over 1600MHz Operation
Internally Matched Input and Output
14dB Small Signal Gain
4.2dB Noise Figure
+9dBm Output Power
Single 2.7V to 6V Positive Power Supply
RF2311
General Purpose Amplifier
RF2311 PCBA
Fully Assembled Evaluation Board
4
Rev C3 010228
.156
.152
.022
.018
5
.056
.052
.195
.191
.240
.232
.050
.008
.004
MIN
.017
1
Package Style: SOP-8
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Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +6
V
DC
Input RF Power
+10
dBm
Operating Ambient Temperature
-40 to +85
C
Storage Temperature
-40 to +150
C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T = 25 C, V
CC
= 5V, Freq= 900MHz
Frequency Range
DC to 1600
MHz
3dB Bandwidth
Gain
12
14
16
dB
V
CC
=5V
13
dB
V
CC
= 3.6V
Noise Figure
4.2
dB
V
CC
=5V
4.0
dB
V
CC
= 3.6V
Input VSWR
< 1.5:1
Output VSWR
<1.3:1
300MHz to 1200MHz
Output IP
3
+14
+16
dBm
900MHz, V
CC
=5V
+8
dBm
900MHz, V
CC
= 3.6V
Saturated Output Power
+8
+9
dBm
900MHz, V
CC
=5V
+1
dBm
900MHz, V
CC
= 3.6V
Reverse Isolation
20
dB
Power Supply
Operating Voltage
2.7 to 6
V
Operating Current Range
12
17
21
mA
V
CC
=5V
8
11
mA
V
CC
= 3.6V
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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Pin
Function
Description
Interface Schematic
1
VCC
Power supply pin. An external bypass capacitor is recommended. The
total supply current is shared between this pin and pin 8 (through the
inductor).
See pin 8.
2
GND
Ground connection. Keep traces physically short and connect immedi-
ately to ground plane for best performance.
3
GND
Same as pin 2.
4
RF IN
RF input pin. This pin is NOT internally DC blocked. A DC blocking
capacitor, suitable for the frequency of operation, should be used in
most applications. DC coupling of the input is not allowed, because this
will override the internal feedback loop and cause temperature instabil-
ity.
See pin 8.
5
GND
Same as pin 2.
6
GND
Same as pin 2.
7
GND
Same as pin 2.
8
RF OUT
RF output pin. Because DC is present on this pin, a DC blocking capac-
itor, suitable for the frequency of operation, should be used in most
applications. The DC voltage on this pin is typically 2.4V. Alternatively,
power supply may be connected to this pin. A series resistor and induc-
tor should be used, in which case the L should be large enough to
present a high impedance at the lowest operating frequency, and the R
should be (V
CC
- 2.4) / I, where I is the desired device current (between
8mA and 20mA).
RF OUT
RF IN
VCC
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