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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
GND
GND
GND
RF IN
GND
RF OUT
VDD
NC
2
1
4
3
7
8
5
6
RF2304
GENERAL PURPOSE LOW-NOISE AMPLIFIER
Receive or Transmit Low-Noise Amplifiers
FDD and TDD Communication Systems
Commercial and Consumer Systems
Portable Battery Powered Equipment
Wireless LAN
ISM Band Applications
The RF2304 is a low-noise small-signal amplifier. The
device is manufactured on a low-cost Gallium Arsenide
MESFET process, and has been designed for use as a
gain block in high-end communication systems operating
from less than 300MHz to above 2.5 GHz. With +6dBm
output power, it may also be used as a driver in transmit-
ter applications, or in highly linear receivers. The device is
packaged in an 8-lead plastic package and is self-con-
tained, requiring just an inductor and blocking capacitors
to operate. The +6dBm output power, combined with the
1.8dB noise figure at 900MHz allows excellent dynamic
range for a variety of receive and transmit applications.
Single 2.7V to 6.0V Supply
6dBm Output Power
8dB Small Signal Gain at 900MHz
1.8dB Noise Figure at 900MHz
Low DC Current Consumption of 5mA
300MHz to 2500MHz Operation
RF2304
General Purpose Low-Noise Amplifier
RF2304 PCBA
Fully Assembled Evaluation Board
4
Rev A5 010717
0.244
0.229
0.157
0.150
0.018
0.014
0.050
0.068
0.053
NOTES:
1. Shaded lead is Pin 1.
2. All dimensions are excluding
mold flash.
3. Lead coplanarity -
0.005 with respect to datum "A".
Dimensions in mm
0.196
0.189
0.008
0.004
-A-
8 MAX
0 MIN
0.034
0.016
0.009
0.007
Package Style: SOIC-8
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RF2304
Rev A5 010717
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Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage (V
DD
)
-0.5 to +6.5
V
DC
DC Current
40
mA
Input RF Power
+10
dBm
Operating Ambient Temperature
-40 to +85
C
Storage Temperature
-40 to +150
C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Operating Range
Overall Frequency Range
300
2500
MHz
Supply Voltage
2.7
6.0
V
Operating Current (I
CC
)
8.4
mA
V
CC
=3V, Temp=27C
7
11
26
mA
V
CC
=5V, Temp=27C
Operating Ambient Temperature
-40
+85
C
3 V Performance
Gain
11.7
dB
Freq= 300MHz, V
CC
= 3V, Temp= 27C
Gain
8.5
dB
Freq= 900MHz, V
CC
= 3V, Temp= 27C
Noise Figure
1.9
dB
Input IP3
+6.9
dBm
OP1dB
+7.5
dBm
Gain
9.2
dB
Freq= 1950MHz, V
CC
= 3V, Temp= 27C
Noise Figure
1.7
dB
Input IP3
+8.6
dBm
OP1dB
+6.9
dBm
Gain
8.2
dB
Freq= 2450MHz, V
CC
= 3V, Temp= 27C
Noise Figure
1.7
dB
Input IP3
+10.5
dBm
OP1dB
+7.5
dBm
5 V Performance
Gain
12.5
dB
Freq= 300MHz, V
CC
= 5V, Temp= 27C
Gain
10
12
14
dB
Freq= 900MHz, V
CC
= 5V, Temp= 27C
Noise Figure
1.9
dB
Input IP3
+8.4
dBm
OP1dB
+8.7
dBm
Gain
9.8
dB
Freq= 1950MHz, V
CC
= 5V, Temp= 27C
Noise Figure
1.9
dB
Input IP3
+10.0
dBm
OP1dB
+8
dBm
Gain
6
8
11
dB
Freq= 2450MHz, V
CC
= 5V, Temp= 27C
Noise Figure
1.6
dB
Input IP3
+8.0
dBm
OP1dB
+6
dBm
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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RF2304
Rev A5 010717
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Application Schematic
Pin
Function
Description
Interface Schematic
1
GND
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
2
GND
Same as pin 1.
3
RF IN
DC coupled RF input. A broadband impedance match is produced by
internal shunt resistive feedback. The DC level is approximately
200mV. If a DC path exists in the connected circuitry, an external DC-
blocking capacitor is required to properly maintain the DC operating
point.
4
GND
Same as pin 1.
5
GND
Same as pin 1.
6
RF OUT
RF output. A broadband impedance match is produced by internal
shunt resistive feedback. The DC connection to the power supply is
provided through an external chip inductor having greater than 150
reactance at the operating frequency. An external DC-blocking capaci-
tor is required if the following circuitry is not DC-blocked.
7
VDD2
Bias control connection. This pin is normally connected to the power
supply, but can be used to switch the amplifier on and off by switching
between power supply voltage and ground. This pin sinks approxi-
mately 600
A when connected to V
DD
, and sources less than 10
A
when grounded.
8
NC
No connection.
RF IN
RF OUT
V
DD
2
1
4
3
7
8
5
6
100 pF
RF IN
L1
RF Choke
100 pF
1 nF
V
DD
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