Rev.1.00, Aug.20.2004, page 1 of 5
CT60AM-18C
Insulated Gate Bipolar Transistor
REJ03G0287-0100
Rev.1.00
Aug.20.2004
Features
V
CES
: 900 V
I
C
: 60 A
Integrated fast-recovery diode
For voltage-resonance
Appearance Figure
3
1
1
2
3
4
2, 4
1 : Gate
2 : Collector
3 : Emitter
4 : Collector
TO-3PL
Applications
Voltage-resonance type home appliances (Microwave ovens, IH cooking devices, IH rice-cookers)
Maximum Ratings
(Tc = 25C)
Parameter
Symbol
Ratings
Unit
Conditions
Collector-emitter voltage
V
CES
900
V
V
GE
= 0 V
Gate-emitter voltage
V
GES
20
V
V
CE
= 0 V
Peak gate-emitter voltage
V
GEM
30
V
V
CE
= 0 V
Collector current
I
C
60
A
Collector current (Pulse)
I
CM
120
A
Emitter current
I
E
40
A
Maximum power dissipation
P
C
200
W
Tc = 25
C
Junction temperature
Tj
40 to +150
C
Storage temperature
Tstg
40 to +150
C
CT60AM-18C
Rev.1.00, Aug.20.2004, page 2 of 5
Electrical Characteristics
(Unless otherwise specified, Tj = 25C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test conditions
Collector-emitter breakdown voltage
V
(BR)CES
1000
not
e1
--
--
V
I
C
= 1 mA, V
GE
= 0 V
Collector-emitter leakage current
I
CES
--
--
1
mA
V
CE
= 900 V, V
GE
= 0 V
Gate-emitter leakage current
I
GES
--
--
0.5
A
V
GE
=
20 V, V
CE
= 0 V
Gate-emitter threshold voltage
V
GE(th)
2.0
4.0
6.0
V
I
C
= 6 mA, V
CE
= 10 V
Collector-emitter saturation voltage
V
CE(sat)
--
2.0
2.7
V
I
C
= 60 A, V
CE
= 15 V
Input capacitance
Ciss
--
5000
--
pF
Output capacitance
Coss
--
125
--
pF
Reverse transfer capacitance
Crss
--
85
--
pF
V
CE
= 25 V, V
GE
= 0 V,
f = 1MHz
Turn-on delay time
t
d(on)
--
0.05
--
s
Rise time
t
r
--
0.12
--
s
Turn-off delay time
t
d(off)
--
0.30
--
s
Fall time
t
f
--
0.25
--
s
I
C
= 60 A, Resistive loads,
V
CC
= 300 V, V
GE
= 15 V,
R
G
= 10
Tail loss
Etail
--
0.6
1.0
mJ/pls
Tail current
I
tail
--
6
12
A
I
CP
= 60 A, Tj = 125
C,
dv/dt = 200 V/
s,
Single-device voltage
resonance circuit
Emitter-collector voltage
V
EC
--
--
3
V
I
E
= 60 A, V
GE
= 0 V
Diode reverse recovery time
t
rr
--
0.5
2
s
I
E
= 60 A, di/dt = 20 A/
s
Thermal resistance (IGBT)
Rth(j-c)
--
--
0.625
C/W
Junction to case
Thermal resistance (Diode)
Rth(j-c)
--
--
4.0
C/W
Junction to case
Notes: 1 Selected value
CT60AM-18C
Rev.1.00, Aug.20.2004, page 3 of 5
Performance Curves
Collector Current vs.
Collector-Emitter Voltage (Typical)
Collector-Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
Collector-Emitter Saturation Voltage vs.
Gate-Emitter Voltage (Typical)
Gate-Emitter Voltage V
GE
(V)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
0
1
2
3
4
5
0
4
8
12
16
20
I
C
= 120A
60A
15A
30A
0
40
80
120
160
200
0
1
2
3
4
5
V
GE
= 20V
P
C
= 200W
15V
10V
8V
9V
7V
Tc = 25C
Pulse Test
Tc = 25C
Pulse Test
Collector Current vs.
Gate-Emitter Voltage (Typical)
Gate-Emitter Voltage V
GE
(V)
Collector Current I
C
(A)
Switching Time vs.
Gate Resistance (Typical)
Gate Resistance R
G
(
)
Switching Time (ns)
Switching Characteristics (Typical)
Collector Current I
C
(A)
Switching Time (ns)
Capacitance vs.
Collector-Emitter Voltage (Typical)
Collector-Emitter Voltage V
CE
(V)
Capacitance C (pF)
10
0
10
1
2
3
5 7
10
2
2
3
5 7
10
1
10
2
2
3
5
7
10
3
2
3
5
7
td(off)
td(on)
tf
tr
10
1
10
2
2
3
5
7
10
3
2
3
5
7
10
4
2
3
5
7
10
0
3 5 7
2
10
1
3 5 7
2
10
2
3 5 7
3
2
10
0
10
1
2
3
5 7
10
2
2
3
5 7
10
2
3
5
7
10
3
2
3
5
7
2
3
td(off)
td(on)
tf
tr
0
40
80
120
160
200
0
4
8
12
16
20
25C
V
CE
= 5V
Pulse Test
Tj = 25C
V
GE
= 0V
f = 1MHz
Cres
Coes
Cies
Tj = 25C
V
CC
= 300V
V
GE
= 15V
R
G
= 10
Tj = 25C
V
CC
= 300V
V
GE
= 15V
I
C
= 60A
CT60AM-18C
Rev.1.00, Aug.20.2004, page 4 of 5
Gate Charge Qg (nC)
Emitter-Collector Voltage V
EC
(V)
Gate-Emitter Voltage vs.
Gate Charge Characteristic (Typical)
Gate-Emitter Voltage V
GE
(V)
Emitter Current vs.
Emitter-Collector Voltage (Typical)
Emitter Current I
E
(A)
0
4
8
12
16
20
0
80
160
240
320
400
400V
600V
0
16
32
48
64
80
0
0.8
1.6
2.4
3.2
4.0
I
C
= 60A
Tj = 25C
V
CE
= 250V
V
GE
= 0V
Pulse Test
Tc = 25C
Pulse Width tw (S)
Pulse Width tw (S)
Junction Temperature Tj (C)
Junction Temperature Tj (C)
IGBT Transient Thermal
Impedance Characteristics
Transient Thermal Impedance Zth( j c ) (C/W)
Diode Transient Thermal
Impedance Characteristics
Transient Thermal Impedance Zth( j c ) (C/W)
Gate-Emitter Threshold Voltage vs.
Junction Temperature (Typical)
Gate-Emitter Threshold Voltage V
GE(th)
(V)
Collector-Emitter Breakdown Voltage V
(BR)CES
(tC)
Collector-Emitter Breakdown Voltage vs.
Junction Temperature (Typical)
Collector-Emitter Breakdown Voltage V
(BR)CES
(25C)
2.0
3.0
4.0
5.0
6.0
7.0
50
0
50
100
150
0.4
0.6
0.8
1.0
1.2
1.4
50
0
50
100
150
10
5
10
2
7
5
3
2
10
1
7
5
3
2
10
0
2 3 5 7
2 3 5 7
10
1
2 3 5 7
10
2
10
3
10
0
2 3 5 7
10
1
10
2
7
5
3
2
10
1
2
2 3 5 7
10
3
2 3 5 7
10
4
5 7
10
5
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
1
2 3 5 7
2 3 5 7
10
1
2 3 5 7
10
2
10
3
10
0
2 3 5 7
10
1
10
2
7
5
3
2
10
1
3
2
5
2 3 5 7
10
3
2 3 5 7
10
4
5 7
V
CE
= 400V
I
C
= 20mA
V
GE
= 0V
I
C
= 1mA
Single pulse
Single pulse
CT60AM-18C
Rev.1.00, Aug.20.2004, page 5 of 5
Package Dimensions
TO-3PL
EIAJ Package Code
JEDEC Code
Mass (g) (reference value)
Lead Material
9.8
Cu alloy
Symbol
Dimension in Millimeters
Min
Typ
Max
A
A
1
A
2
b
D
E
e
x
y
1
y
ZD
ZE
20.5 max
3.2
2
1
0.2
5.45
5.45
6
26
2.5
20.8
0.8
4.0
5
2
0.6
3
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
Order Code
Lead form
Standard packing
Quantity
Standard order code
Standard order
code example
Straight type
Plastic Magazine (Tube)
25 Type name
CT60AM-18C
Lead form
Plastic Magazine (Tube)
25 Type name Lead forming code
CT60AM-18C-AD
Note : Please confirm the specification about the shipping in detail.
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