Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised January 25, 2002
Page 1
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
www.raytheonrf.com
The Raytheon RMPA39200 is a high efficiency power amplifier designed for use in point to point radio, point to
multi-point communications, LMDS and other millimeter wave applications. The RMPA39200 is a 3-stage GaAs
MMIC amplifier utilizing Raytheon's advanced 0.15
m gate length Power PHEMT process and can be used in
conjunction with other driver or power amplifiers to achieve the required total power output.
Description
Absolute
Maximum
Ratings
Electrical
Characteristics
(At 25C) 50
system,
Vd=+5 V, Quiescent
current (Idq) = 1600 mA
19 dB small signal gain (typ.)
32 dBm power out (typ.)
Circuit contains individual source vias
Chip Size 4.28 mm x 3.19 mm
Features
RMPA39200
37-40 GHz 1.6 Watt Power Amplifier MMIC
Parameter
Symbol
Value
Unit
Positive DC Voltage (+5 V Typical)
Vd
+ 6
Volts
Negative DC Voltage
Vg
- 2
Volts
Simultaneous (Vd - Vg)
Vdg
+ 8
Volts
Positive DC Current
Id
2352
mA
RF Input Power (from 50
source)
Pin
20
dBm
Operating Base plate Temperature
Tc
-30 to +85
C
Storage Temperature Range
Tstg
-55 to +125
C
Thermal Resistance
Rjc
8
C/W
(Channel to Backside)
Parameter
Min
Typ
Max
Unit
Frequency Range
37
40
GHz
Gate Supply Voltage (Vg)
1
-0.2
V
Gain Small Signal
(f=37-38.5 GHz)
17
19
dB
(f=38.5-40 GHz)
16
17
dB
(Pin=0 dBm)
Gain Variation vs.
Frequency
+/-1.5
dB
Power Output
at 1 dB Compression
(f=37-38.5 GHz)
31
dBm
(f=38.5-40 GHz)
30
dBm
Power Output Saturated:
(f=37-38.5 GHz)
31
32
dBm
(f=38.5-40 GHz)
30
31
dBm
(Pin=+16 dBm)
Parameter
Min
Typ
Max
Unit
Drain Current
at Pin=0 dBm
1600
mA
Drain Current
at P1 dB Compression
1700
mA
Power Added Efficiency
(PAE) at P1dB
17
%
OIP3 (17 dBm/Tone)
(10 MHz Tone Sep.)
37
dBm
Input Return Loss
(Pin=0 dBm)
10
dB
Output Return Loss
(Pin=0 dBm)
10
dB
Note:
1. Typical range of the negative gate voltages is -0.5 to 0.0V to set typical Idq of 1600 mA.
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised January 25, 2002
Page 2
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
www.raytheonrf.com
1.367
1.827
1.597
3.010
0.0
0.205
0.889
2.426
2.954
3.500
0.184
3.194
0.0
1.954
4.282
Ground
(Back of Chip)
Figure 1
Functional Block
Diagram
CAUTION: THIS IS AN ESD SENSITIVE DEVICE
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325C for 15 minutes.
Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen
environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC
Ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist-grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to
prevent static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long
corresponding to a typical 2 mil gap between the chip and the substrate material.
Application
Information
RF IN
RF OUT
Drain Supply
(VDA & VDB)
Gate Supply
(VGA & VGB)
MMIC Chip
Figure 2
Chip Layout and Bond
Pad Locations
(Chip Size=4.282 mm
x 3.194 mm x 50 um.
Back of Chip is RF
and DC Ground)
Dimensions in mm
RMPA39200
37-40 GHz 1.6 Watt Power Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised January 25, 2002
Page 3
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
www.raytheonrf.com
Figure 3
Recommended
Application Schematic
Circuit Diagram
Drain Supply (Vd= +5V)
(Connect to both VDA & VDB)
Gate Supply (Vg)
(VGA and/or VGB)
100 pF
10,000 pF
L
L
Bond Wire L's
Bond Wire L's
RF IN
RF OUT
Ground
(Back of Chip)
MMIC Chip
100 pF
10,000 pF
L
L
Vd
(Positive)
100 pF
100 pF
100 pF
100 pF
10,000 pF
10,000 pF
10,000 pF
10,000 pF
Vg
(Negative)
Vg
(Negative)
Vd
(Positive)
RF
Input
RF
Output
5mil Thick
Alumina
50-Ohm
5 mil Thick
Alumina
50-Ohm
2 mil Gap
L< 0.015"
(4 Plcs)
Die-Attach
80Au/20Sn
Figure 4
Recommended
Assembly and
Bonding Diagram
Note:
Use 0.003" x 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief. Vd should be
biased from 1 supply on both sides as shown.Vg can be biased from either or both sides from 1 supply.
RMPA39200
37-40 GHz 1.6 Watt Power Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised January 25, 2002
Page 4
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
www.raytheonrf.com
CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to properly test the amplifier:
Recommended
Procedure
for Biasing and
Operation
Step 1: Turn off RF input power.
Step 2: Connect the DC supply grounds to the ground
of the chip carrier. Slowly apply negative gate
bias supply voltage of -1.5 V to Vg.
Step 3: Slowly apply positive drain bias supply voltage
of +5 V to Vd.
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq=1600 mA.
Note:
An example auto bias sequencing circuit to apply negative gate voltage and positive drain voltage for the above procedure is shown below.
Step 5: After the bias condition is established, the RF
input signal may now be applied at the
appropriate frequency band.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power.
(ii) Turn down and off drain voltage (Vd).
(iii) Turn down and off gate bias voltage (Vg).
RMPA39200
37-40 GHz 1.6 Watt Power Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised January 25, 2002
Page 5
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
www.raytheonrf.com
-5
0
5
10
15
20
25
34
35
36
37
38
39
40
41
42
Frequency (GHz)
Ga
in
(
d
B
)
-30
-20
-10
0
10
20
30
Re
t
u
r
n
L
o
s
s
(
d
B
)
Performance
Data
10
15
20
25
30
35
36
37
38
39
40
Frequency (GHz)
Output P
ow
e
r
(
dB
m
)
Large Signal Gain
P1dB
RMPA39200 S-Parameters Vs. Frequency
Bias Vd=5 V, Id=1600 mA, T=25C
RMPA39200 Power and LS Gain @ P1dB Vs. Frequency
Bias Vd=5 V, Id=1600 mA, T=25C
RMPA39200
37-40 GHz 1.6 Watt Power Amplifier MMIC
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