Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised August 5, 2002
Page 1
www.raytheonrf.com
Characteristic performance data and specifications are subject to change
without notice.
PRODUCT INFORMATION
RMPA2451-58
2.4-2.5 GHz GaAs MMIC
Power Amplifier
# 425430398
Description
38% Power Added Efficiency
29 dBm Typical Output Power
Small package outline: 0.28"x 0.28"x 0.07"
Low Power Mode: 0 dBm
Features
Raytheon RF Components' RMPA2451-58 is a partially matched monolithic power amplifier in a
surface mount package for use in wireless applications in the 2.4 to 2.5 GHz ISM frequency band. The
amplifier may be biased for linear, class AB or class F for high efficiency applications. External
matching components are required to optimize the RF performance. The MMIC chip design utilizes
Raytheon RF Components' 0.25m power Pseudomorphic High Electron Mobility (PHEMT) process.
Electrical
Characteristics
1
Parameter
Min
Typ
Max
Unit
Frequency Range
2400
2500
MHz
Gain
1
28.5
33
dB
Output Power, P1dB
1
27
29
dBm
Power Added
Efficiency 38
%
Parameter
Min
Typ
Max Unit
3rd order Intermod.
Product
2
-35
-27
dBc
Drain Current (Id1 + Id2)
430
mA
Gate Current (Ig1 + Ig2)
5
mA
Input Return Loss (50W)
2:1
dB
Low Power Mode, Pout
3
0
dBm
Notes:
1. Production Testing includes Gain, Output Power at 1-dB gain compression (P1dB) and Input Return Loss at Vd1 = Vd2 =
+5.0V; Vg1,Vg2 = -0.5V (nominal), adjust Vg1 and Vg2 to get Idq1 = 60 mA, Idq2 = 340 mA and at F = 2.45 GHz, at 25
0
C.
2. Two tone 3rd order Output Intermodulation products (IM3) are measured with total output power level of 25dBm (tone
spacing is 1MHz).
3. Vg1, Vg2 tied together. Vd = 5V until Idq total = 45 mA, Pin = -10 dBm.
Other Parameters are guaranteed by Design Validation Testing (DVT).
Parameter
Symbol
Min
Max
Units
Positive Drain DC Voltage
Vd1,Vd2
0
+8
Volts
Negative Gate DC Voltage
Vg1,Vg2
-5
0
Volts
Simultaneous Drain to Gate Voltage
Vd-Vg
+10
Volts
RF Input Power (from 50
source)
Pin
+10
dBm
Drain Current, First Stage
Id1
75
mA
Drain Current, Second Stage
Id2
525
mA
Gate Current
Ig
5
mA
Channel Temperature
Tc
175
C
Operating Case Temperature
Tcase
-40
85
C
Storage Temperature Range
Tstg
-40
125
C
Thermal Resistance (Channel to Case)
Rjc
33
C/Watt
Absolute
Ratings
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised August 5, 2002
Page 2
www.raytheonrf.com
Characteristic performance data and specifications are subject to change
without notice.
PRODUCT INFORMATION
RMPA2451-58
2.4-2.5 GHz GaAs MMIC
Power Amplifier
# 425430398
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
The following describes the procedure for evaluating the RMPA2451-58, a partially-matched PHEMT
monolithic power amplifier which has been designed for wireless applications in the 2.4 - 2.5 GHz ISM
band, in a surface mount package. The package outline, along with the pin designations, is provided as
Figure 1. The functional block diagram of the packaged product is provided as Figure 2.
It should be noted that the RMPA2451-58 requires the use of external passive components to form the
DC bias and RF output matching circuits. The schematic for a recommended DC bias / RF matching
circuit is shown in Figure 3, along with a list of the appropriate components. Figure 4 illustrates the
layout of an evaluation board based on this schematic (RMPA2451-58-TB).
Figures 5 and 6 illustrate typical device performance. This data for various operating parameters was
obtained across the design bandwidth over a range of temperatures.
Figure 5 shows the variation in Gain and P1dB with temperature and operating frequency.
Figure 6 shows the 3rd-order intermodulation product measured at different total output power levels.
Application
Information
Figure 2
Functional Block
Diagram
Figure 1
Package
Information
BOTTOM VIEW
0.041
Vd2 + RFOut
Vd2 + RFOut
Vd2 + RFOut
GND
Vd1
GND
GND
RF In
GND
Vg1
Vg2
GND
GND
1
2
3
4
5
6
7
8
9
10
11
12
BASE
Description
Pin #
SIDE SECTION
0.070 MAX.
PLASTIC
LID
0.010
0.230
0.246
0.282
10 11
TOP VIEW
0.015
1
2
3
4
5
6
7
8
9
12
0.200 SQ.
Raytheon
RMPA2451-58
PPYYWWX
Pins #4, #6, #7, #9, #12
Ground
Pin #5
V
d1
Pins #1, #2, #3
RF OUTPUT & Vd2
Pin #10
V
g1
Pin #11
V
g2
Package Underside
GROUND
Pin #8
RF INPUT
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised August 5, 2002
Page 3
www.raytheonrf.com
Characteristic performance data and specifications are subject to change
without notice.
PRODUCT INFORMATION
RMPA2451-58
2.4-2.5 GHz GaAs MMIC
Power Amplifier
# 425430398
Step 1: Turn the RF power OFF.
Step 2: Use the GND terminals of the evaluation
board for the ground of the DC supplies.
Step 3: Apply a nominal voltage of approximately -
3.0V to both V
gg1
and V
gg2
terminals.
Step 4: Apply a nominal voltage of +5.0V to the
V
dd
terminals. Adjust V
gg2
to provide a
second stage quiescent Drain current, I
dd2
,
of 340 mA.. Adjust V
gg1
to give a first
stage quiescent Drain current, I
d1
of
60mA..
Step 5: Apply an RF signal within the ISM
frequency range (2.4 - 2.5 GHz) at an
initial input power level of -10 dBm.
Step 6: To perform intermodulation product
measurements, a second RF signal
generator
with a frequency difference of 1 MHz is
required, along with an appropriate
power combiner. The test configuration
should allow this additional generator to
provide the same input power level as
the first generator into the device.
Intermodulation readings may then be
made at the required total output power
levels.
Step 7: To operate at lower quiescent Drain
currents, increase the magnitudes of
V
gg1
and V
gg2
as required, alternatively
to operate at higher quiescent Drain
currents, the magnitudes of V
gg1
and
V
gg2
should be decreased accordingly.
Step 8: When turning the amplifier OFF, the
power-up sequence should be reversed.
Figure 3
Schematic of a
recommended DC
bias/ RF matching
circuit
V
gg1
C
2
C
1
Raytheon
RMPA2451
PPYYWWX
V
dd1
V
gg2
C
2
C
1
C
2
C
1
V
dd2
L
1
C
4
RF Output
RF Input
C
3
C
3
C
2
C
1
L
2
It is important that the following points be noted prior to testing; Pin designations are as shown in
Figure 2 and 4.
V
gg1
and V
gg2
are the negative Gate bias voltages applied at the pins of the evaluation test board.
V
dd1
and V
dd2
are the positive Drain bias voltages applied at the pins of the evaluation test board.
V
g1
and V
g2
are the negative Gate bias voltages applied at the pins of the package.
V
d1
and V
d2
are the positive Drain bias voltages applied at the pins of the package.
Test Procedure
for the
evaluation board
(RMPA2451-58-TB)
CAUTION: LOSS OF GATE VOLTAGES (VG1, VG2) WHILE DRAIN VOLTAGES (VD1, VD2) ARE
PRESENT MAY DAMAGE THE AMPLIFIER.
The following sequence of procedures must be followed to properly test the amplifier:
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised August 5, 2002
Page 4
www.raytheonrf.com
Characteristic performance data and specifications are subject to change
without notice.
PRODUCT INFORMATION
RMPA2451-58
2.4-2.5 GHz GaAs MMIC
Power Amplifier
# 425430398
Figure 4
Layout of
Evaluation
Board
(RMPA2451-58-
TB)
R MPA2 451-53
12
11
10
9
8
7
6
5
4
3
2
1
+
+
+
+
L
1
RF Input
RF Output
C
3
L
2
C
1
C
2
C
3
C
4
V
dd1
C
1
C
2
C
2
C
1
C
2
C
1
V
gg1
V
gg2
GND V
dd2
Part
Value
Quantity Supplier
Part
No.
C1
1000 pF
4
MURATA
GRM36X7R102K050
C2
2.2 f
4
SPRAGUE
595D225X0016T2T
C3
1.0 pF
2
MURATA
GRM36COG1R0B050
C4
2.0 pF
1
MURATA
GRM36COG2R0B050
L1
10.0 nH
1
COILCRAFT
0805HT10NTKBC
L2
1.8 nH
1
COILCRAFT
0805HT1N8TKBC
Parts List
for Test
Evaluation
Board
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised August 5, 2002
Page 5
www.raytheonrf.com
Characteristic performance data and specifications are subject to change
without notice.
PRODUCT INFORMATION
RMPA2451-58
2.4-2.5 GHz GaAs MMIC
Power Amplifier
# 425430398
Variation In Gain & P1dB With Frequency Over Temperature
(V
dd
= +5.0 V, I
ddq
= 60 + 340 mA @ 25C)
25.0
27.0
29.0
31.0
33.0
35.0
37.0
-50
-30
-10
10
30
50
70
90
Temperature [C]
2.40 GHz
2.45 GHz
2.50 GHz
2.40 GHz
2.45 GHz
2.50 GHz
Gain [dB]
P1dB [dBm]
NB: Gain measured at P
in
= -10 dBm
Figure 5
Typical Gain and
P1dB performance
across bandwidth
over temperature
Figure 6
Typical third-order
intermodulation
product variation
over temperature
Variation In IM3 With Frequency & Temperature For Different Total Output Power Levels
[Vdd = +5.0 V, Iddq = 60 + 340 mA @ 25C]
-43.0
-41.0
-39.0
-37.0
-35.0
-33.0
-31.0
-29.0
-27.0
-25.0
-50
-30
-10
10
30
50
70
90
Temperature [C]
3r
d O
r
de
r
I
n
t
e
r
m
o
d
.
P
r
od
uc
t
[
d
B
c
]
2.40 GHz
2.45 GHz
2.50 GHz
2.40 GHz
2.45 GHz
2.50 GHz
P
TOT
= 25 dBm
P
TOT
= 23 dBm
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