Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised February 6, 2003
Page 1
www.raytheonrf.com
Specifications are based on most current or latest revision.
ADVANCED INFORMATION
RMPA2059-108
3V WCDMA Power Amplifier Module
RF Components
RMPA2059 US PCS CDMA Power Amplifier Module
Functional Block Diagram
INTERSTAGE
MATCH
INPUT
STAGE
OUTPUT
STAGE
INPUT
MATCHING
NETW ORK
OUTPUT STAGE
BIAS
COLLECTOR
BIAS
INPUT STAGE
BIAS
Bias
Control
MMIC
PA MODULE
RF OUT
(8)
VCC1, VCC2
(1, 10)
RF IN
(2)
VREF
(5)
GND
(3,6, 7, 9, 11)
VCC=3.4V (nom)
VREF=3.0V (nom)
1920-1980 MHz
50 Ohms I/O
OUTPUT
MATCHING
NETW ORK
Description
Features
The RMPA2059-108 power amplifier module (PAM) is designed for WCDMA applications. The 2 stage
PAM is internally matched to 50 ohms to minimize the use of external components and features a low-
power mode to reduce standby current and DC power consumption during peak phone usage. High
power-added efficiency and excellent linearity are achieved using Raytheon RF Components' InGaP
Heterojunction Bipolar Transistor (HBT) process.
Absolute
Ratings
1
Parameter
Symbol
Min
Max
Units
Supply Voltages
Vcc1, Vcc2
0
5.0
V
Reference Voltage
Vref
2.7
5.0
V
Power Control Voltage
Vmode
0
3.0
V
RF Input Power
Pin
+5
dBm
Storage Temperature
Tstg
-55
+150
C
!
Single positive-supply operation and low power and shutdown modes
!
40% CDMA efficiency at +27 dBm average output power
!
Compact LCC package- 4.0 x 4.0 x 1.5 mm with industry standard pinout
!
Internally matched to 50 ohms and DC blocked RF input/output.
!
Meets WCDMA performance requirements
Note:
1. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
Module Block
Diagram
Vmode (4)
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised February 6, 2003
Page 2
www.raytheonrf.com
Specifications are based on most current or latest revision.
ADVANCED INFORMATION
RMPA2059-108
3V WCDMA Power Amplifier Module
RF Components
Electrical
Characteristics
1
Notes:
1. All parameters met at Tc =+25C, Vcc =+3.4V, f=1950 MHz and load VSWR
1.2:1.
2. All phase angles.
3. No applied RF signal.
4. Guaranteed by design
Parameter
Symbol
Condition
Min
Typical
Max
Operating Frequency
1920
1980 MHz
CDMA MODE
Gain
G
Po=0 dBm
26
dB
Gp
Po=+27 dBm
27
dB
Max Linear Power Out
Po
27
dBm
Power-Added Efficiency
PAEd
Po=+27 dBm
40
%
Adjacent Channel
ACPR
Po=+27 dBm
Power Rejection
+/-5.0 MHz Offset
ACLR1
3GPP 3.2 03-00
-38
dBc
+/-10.0 MHz Offset
ACLR2
DPCCH+1DPDCH
-48
dBc
General Characteristics
Input VSWR
VSWR
2.0:1
Noise Figure
NF
3
dB
Rx Band Noise Power
No
-139
dBm/Hz
Harmonic Suppression
4
2fo, 3fo, 4fo
-30
dBc
Spurious Output
4
5:1 Load VSWR
2
-60
dBc
Case Operating Temp.
Tc
-30
85
C
DC Characteristics
Quiescent Current
Iccq
High Power Mode
80
mA
Low Power Mode
40
mA
Vref Current
Iref
Vref=3.0V
5
mA
Power Shutdown Current
3
Vref=0V
<1
10
uA
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised February 6, 2003
Page 5
www.raytheonrf.com
Specifications are based on most current or latest revision.
ADVANCED INFORMATION
RMPA2059-108
3V WCDMA Power Amplifier Module
RF Components
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
"
Precautions to Avoid Permanent Device Damage:
Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs.
Devices should remain in their original packaging until component placement to ensure no
contamination or damage to RF, DC & ground contact areas.
Device Cleaning: Standard board cleaning techniques should not present device problems
provided that the boards are properly dried to remove solvents or water residues.
Static Sensitivity: Follow ESD precautions to protect against ESD damage:
A properly grounded static-dissipative surface on which to place devices.
Static-dissipative floor or mat.
A properly grounded conductive wrist strap for each person to wear while handling
devices.
General Handling: Handle the package on the top with a vacuum collet or along the edges
with a sharp pair of bent tweezers. Avoiding damaging the RF, DC, & ground contacts on the
package bottom. Do not apply excessive pressure to the top of the lid.
Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition,
devices are protected and require no special storage conditions. Once the sealed bag has
been opened, devices should be stored in a dry nitrogen environment.
"
Device Usage: Raytheon recommends the following procedures prior to assembly.
Dry-bake devices at 125
C for 24 hours minimum. Note: The shipping trays cannot withstand
125
C baking temperature.
Assemble the dry-baked devices within 7 days of removal from the oven.
During the 7-day period, the devices must be stored in an environment of less than 60%
relative humidity and a maximum temperature of 30
C
If the 7-day period or the environmental conditions have been exceeded, then the dry-bake
procedure must be repeated.
"
Solder Materials & Temperature Profile: Reflow soldering is the preferred method of SMT
attachment. Hand soldering is not recommended.
Reflow Profile
Ramp-up: During this stage the solvents are evaporated from the solder paste. Care
should be taken to prevent rapid oxidation (or paste slump) and solder bursts caused by
violent solvent out-gassing. A typical heating rate is 1- 2C/sec.
Pre-heat/soak: The soak temperature stage serves two purposes; the flux is activated and
the board and devices achieve a uniform temperature. The recommended soak condition
is: 120-150 seconds at 150C.
Reflow Zone: If the temperature is too high, then devices may be damaged by mechanical
stress due to thermal mismatch or there may be problems due to excessive solder
oxidation. Excessive time at temperature can enhance the formation of inter-metallic
compounds at the lead/board interface and may lead to early mechanical failure of the
joint. Reflow must occur prior to the flux being completely driven off. The duration of peak
reflow temperature should not exceed 10 seconds. Maximum soldering temperatures
should be in the range 215-220C, with a maximum limit of 225C.
Cooling Zone: Steep thermal gradients may give rise to excessive thermal shock.
However, rapid cooling promotes a finer grain structure and a more crack-resistant solder
joint. The illustration below indicates the recommended soldering profile.
Application
Information
PDF 
ZIP
