Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised April 7, 2000
Page 1
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Description
K
Positive supply voltage of 3.5 V, nominal
K
Efficiency of 36%, typical, for CDMA average power out of 29 dBm
K
Small outline quad package
Features
The RMPA1902-58 is a monolithic high efficiency power amplifier for PCS CDMA personal communication system
applications. The MMIC requires off-chip matching. The amplifier circuit design is a single ended configuration that
utilizes harmonic tuning for increased power added efficiency and linearity. The device uses Raytheon's
Pseudomorphic High Electron Mobility Transistor (pHEMT) process.
Electrical
Characteristics
1
Parameter
Min
Typ
Max
Unit
Frequency Range
1850
1910
MHz
Gain (Small Signal)
30
dB
Gain Variation vs Temp
-0.02
dB/C
Noise Power
(1930-1990 MHz)
(All Power Levels)
-137dBm/Hz
Input VSWR (50
)
2.0:1
---
Stability (All spurious)
2
-7 0
dBc
Harmonics
(Po
29 dBm)
2fo, 3fo, 4fo
-40
dBc
Notes:
1. Specifications are valid for Vdd = 3.5V, load = 50
,
and Tc = 25C as measured in Raytheon's test fixture unless otherwise stated.
2. Source/Load VSWR
3
:1 (All Angles, -50 dBm<Po<29 dBm) or Load VSWR
20:1 (Out of Band, All Angles, Tc=-30 to +90C).
3. Po
29.0 dBm at Vdd=3.5V; CDMA Waveform measured using the ratio of the average power within the 1.23 MHz channel and within a 30
kHz bandwidth at a 1.25 MHz offset.
4. Vgg adjusted for quiescent current. I
dq1
,
2
=50+/-1 mA, I
dq3
=85+/-2 mA
Absolute
Maximum
Ratings
4
Parameter
Symbol
Value
Unit
Positive DC Voltage
Vd1,Vd2, Vd3
+ 9
Volts
Negative DC Voltage
Vg1,Vg2, Vg3
- 6
Volts
Simultaneous (Vd-Vg)
Vdg
+12
Volts
RF Input Power (from 50-Ohm source)
P
IN
+10
dBm
Operating Case Temperature
T
C
-30 to +90
C
Storage Temperature Range
T
Stg
-35 to +110
C
Thermal Resistance (Channel to case)
R
jc
+18
C/W
Parameter
Min
Typ
Max
Unit
Power Out
29
dBm
Efficiency at
Pout = 29 dBm
36
%
ACPR
(Offset
1.25 MHz)
3
49
dBc
Noise Figure (over temp.)
5.5
dB
Quiescent Current
135
mA
Vdd
3.5
Volts
Vgg (<4 mA)
4
-2.0
-0.3
Volts
Case Operating Temp
-40
+85
C
RMPA1902A-58
PCS GaAs MMIC Power Amplifier
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised April 7, 2000
Page 2
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
The following describes a procedure for evaluating the RMPA1902-58, a monolithic high efficiency power amplifier,
in a surface mount package, designed for use in Personal Communication Systems (PCS) utilizing Code Division
Multiple Access (CDMA). Figure 1 shows the package outline and the pin designations. Figure 2 shows the
functional block diagram of the packaged product. It should be noted that RMPA1902-58 requires external passive
components for DC bias and RF output matching circuits. A recommended schematic circuit is shown in Figure 3.
The gate biases for the three stages of the amplifier may be set by simple resistive voltage dividers. Figure 4 shows
a typical layout of an evaluation board, corresponding to the schematic circuits of Figure 3. The following
designations should be noted:
(4) Vd1 and Vd2 are the Drain Voltages (positive)
applied at the pins of the package
(5) Vdd1 and Vdd2 are the positive supply voltages at
the evaluation board terminals
Note: The 2 terminals of Vdd1 and Vdd2 may be
tied together.
The base of the package must be soldered on to a heat
sink for proper operation.
Figure 1
Package Outline and
Pin Designations
RF Out/Vd3
RF Out/Vd3
RF Out/Vd3
VD1
GND
VG1
RF Input
GND
VG2
VD2
GND
VG3
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
Description
Pin #
Dimensions in inches
10
11
1
2
3
4 5 6
7
8
9
12
BOTTOM VIEW
TOP VIEW
10
11
0.030
A
0.015
1
2
3
4
5
6
7
8
9
12
0.200 SQ.
RAY
RMPA
1902A
0.041
13
PLASTIC LID
SIDE SECTION
0.069 MAX.
0.010
0.230
0.246
0.282
Application
Information
(1) Pin designations are as shown in Figure 2.
(2) Vg1 and Vg2 are the Gate Voltages (negative)
applied at the pins of the package
(3) Vgg1 and Vgg2 are the negative supply voltages at
the evaluation board terminals
Note: The 3 terminals of Vgg1, Vgg2 and Vgg3 may
be tied together.
Figure 2
Functional Block
Diagram of
Packaged Product
RF IN
Pin# 7
Vg1
Pin# 6
Vg2
Pin# 9
Vd1
Pin# 4
Vd2
Pin# 10
GND
Pins# 5, 8, 11, 13
Vg3
Pin#12
RF OUT & Vd3
Pins# 1, 2, 3
RMPA1902A-58
PCS GaAs MMIC Power Amplifier
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised April 7, 2000
Page 3
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Figure 3
Schematic of
Application Circuit
showing external
components
Figure 4
Layout of Test
Evaluation Board
(RMPA1902-58-TB)
RMPA1902A-58
PCS GaAs MMIC Power Amplifier
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised April 7, 2000
Page 4
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
CAUTION: LOSS OF GATE VOLTAGES (VG1, VG2, VG3) WHILE CORRESPONDING DRAIN VOLTAGES
(VD1,VD2,VD3) ARE PRESENT MAY DAMAGE THE AMPLIFIER.
The following sequence must be followed to properly test the amplifier:
Test Procedure
for the
evaluation board
(RMPA1902-58-TB)
Step 1: Turn off RF input power.
Step 2: Use GND terminal of the evaluation board
for the ground of the DC supplies.
Slowly apply gate supply voltages of typical
-2.0 V to the board terminals
Vgg=Vgg1=Vgg2=Vgg3
Step 3: Slowly apply drain supply voltages of +3.5 V to
the board terminals Vdd=Vdd1=Vdd2=Vdd.
Adjust Vgg to set the total quiescent current
(with no RF applied) Idq to nominal 135 mA.
[Gate supply voltages (Vgg i.e. Vgg1, Vgg2,
Vgg3) may be adjusted, only if quiescent
current (Idq1 to Idq3) values desired are
different from those noted on the data
summary supplied with product samples]
Step 4: After the bias condition is established, RF input
signal may now be applied at the appropriate
frequency band and appropriate power level.
Step 5: Follow turn-off sequence of:
(i) Turn off RF Input Power
(ii) Turn down and off drain voltages
Vdd=Vdd1=Vdd2=Vdd3
(iii) Turn down and off gate voltages
Vgg=Vgg1=Vgg2=Vgg3
RMPA1902A-58
PCS GaAs MMIC Power Amplifier
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised April 7, 2000
Page 5
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
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