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Электронный компонент: QIQ0660001

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QIQ0660001
Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724) 925-7272
IGBT H-Series Chopper
Hermetic Module
600 Amperes/600 Volts
Page 1
PRELIMINARY
06/06/97
Description:
Powerex IGBT Hermetic modules are
designed for use in switching applications.
Each Module consists of two IGBT transistors
in a half bridge configuration with each
transistor having a reverse connected super
fast recovery free wheel diode. All
components are located in a hermetically
sealed chamber and are electrically isolated
from the heat sinking base plate, offering
simplified system assembly and thermal
management.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
(70ns) Free-Wheel Diode
Isolated Base plate for Easy Heat
sinking
Fully Hermetic Package
Package Design Capable of Use at
High Altitudes
Package can be modified to adhere
to customer dimensions.
D1 sized to match RM400HA
Schematic:
Applications:
AC Motor Control
Motion/Servo Control
Air Craft Applications
Ordering Information:
Contact Powerex Custom Modules
D1
D2
QIQ0660001
Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724) 925-7272
IGBT H-Series Chopper
Hermetic Module
600 Amperes/600 Volts
Page 2
PRELIMINARY
06/06/97
Maximum Ratings, Tj=25

C unless otherwise specified
Ratings
Symbol
Units
Collector Emitter Voltage
V
CES
600
Volts
Gate Emitter Voltage
V
GES
20
Volts
Collector Current
I
C
600
Amperes
Peak Collector Current
I
CM
1200*
Amperes
Diode Forward Current (D2)
I
FM
600
Amperes
Diode Forward Current (D1)
I
FM
400
Amperes
V Isolation
V
RMS
2500
Volts
Static Electrical Characteristics, Tj=25

C unless otherwise specified
Characteristic
Symbol
Test
Conditions
Min
Typ
Max
Units
Collector Cutoff Current
I
CES
V
CE
=V
CES
1.0
mA
Gate Leakage Current
I
GES
V
CE
=0V
0.5
A
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
=60mA,
V
CE
=10V
4.5
6.0
7.5
Volts
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=600A,
V
GE
=15V
2.1
2.8
Volts
V
CE(sat)
I
C
=600A,
V
GE
=15V,
T
j
=150
C
2.15
Volts
Total Gate Charge
Q
G
V
CC
=300V,
I
C
=600A,
V
GS
=15V
1800
nC
Diode Forward Voltage (D1)
V
FM
I
E
=400A,
V
GS
=0V
2.0
Volts
Diode Forward Voltage (D2)
V
FM
I
E
=600A,
V
GS
=0V
2.8
Volts
Dynamic Electrical Characteristics, Tj=25

C unless otherwise specified
Characteristic
Symbol
Test
Conditions
Min
Typ
Max
Units
Input Capacitance
C
ies
V
GE
=0V
60
nF
Output Capacitance
C
oes
V
CE
=10V
21
nF
Reverse Transfer Capacitance
C
res
f=1MHz
12
nF
Turn on Delay time
t
d(on)
V
CC
=300V
nS
Rise Time
t
r
I
C
=600A
nS
Turn off delay time
t
d(off)
V
GE1
=V
GE2
=15
V
nS
Fall Time
t
f
R
G
=1
300
nS
Diode Reverse Recovery Time (D1)
trr
I
E
=400A
400
nS
Diode Reverse Recovery Time (D2)
trr
I
E
=600A
110
nS
Diode reverse Recovery Charge (D1)
Qrr
di
E
/dt=
400A/
S
80
C
Diode reverse Recovery Charge (D2)
Qrr
di
E
/dt=
1200A/
S
1.62
C
QIQ0660001
Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724) 925-7272
IGBT H-Series Chopper
Hermetic Module
600 Amperes/600 Volts
Page 3
PRELIMINARY
06/06/97
Thermal and Mechanical Characteristics, Tj=25

C unless otherwise specified
Characteristic
Symbol
Test
Conditions
Min
Typ
Max
Units
Thermal Resistance, Junction to
Case
R
JC
IGBT
0.06
C/W
Thermal Resistance, Junction to
Case
R
JC
Diode (D1)
0.08
C/W
Thermal Resistance, Junction to
Case
R
JC
Diode (D2)
0.12
C/W