QID0660009
Powerex, Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272
Dual IGBT Module
600 Amperes / 600 Volts
Preliminary Page
1
6/9/2003
Welding Power Supplies
Description:
Powerex Dual IGBT Module is
designed specially for customer
applications.
Features:
Low Drive Requirement
Low V
CE(sat)
Super Fast Diode
(4) H Series 150A 600V
Chips per IGBT Switch
(6) H Series 100A 600V
Chips per Diode
Copper Base Plate
Low Thermal Resistance
Aluminum Nitride DBC Ceramic
Dim Inches
Millimeters
A 4.19 106.4
B 2.42
61.4
C 1.30
33.0
D 0.26
6.6
E 3.66
93.0
F 0.26
6.7
G 1.89
48.0
H 0.05
1.20
J 0.74
18.7
K 1.10
27.9
L 0.41
10.5
M 0.24
6.0
N 0.59
15.0
P 0.54
13.6
Dim Inches
Millimeters
Q 0.63
16.0
R 3.11
79.0
S 1.34
34.0
T 0.94
24.0
U 0.25
6.4
V 0.11
2.8
W 1.29
32.7
X 0.31
7.8
Y 1.00
25.5
Z 1.26
32.0
AA 0.20
0.5
BB
0.256 Dia.
6.5 Dia.
CC
6 Hex Nut
6 Hex Nut
QID0660009
Powerex, Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272
Dual IGBT Module
600 Amperes / 600 Volts
Preliminary Page
2
6/9/2003
Maximum Ratings, Tj=25
C unless otherwise specified
Ratings Symbol
QID0660009
Units
Collector Emitter Voltage
V
CES
600 Volts
Gate Emitter Voltage
V
GES
20
Volts
Collector Current
I
C
600
Amperes
Peak Collector Current
I
CM
1200*
Amperes
Diode Forward Current
I
F
600
Amperes
Diode Forward Surge Current
I
FM
1200*
Amperes
Power Dissipation
P
d
1670 Watts
Junction Temperature
T
j
-55 to 150
C
Storage Temperature
T
stg
-55 to 125
C
Mounting Torque, M6 Terminal Screws
-
26
In-lb
Mounting Torque, M6 Mounting Screws
-
26
In-lb
Module Weight (Typical)
-
460
Grams
V Isolation
V
RMS
1800 Volts
*
Pulse width and repetition rate should be such that device junction temperature does not exceed device rating.
Static Electrical Characteristics, Tj=25
C unless otherwise specified
Characteristic Symbol
Test
Conditions
Min.
Typ.
Max.
Units
Collector Cutoff Current
I
CES
V
CE
=V
CES
V
GE
=0V
-
-
1.0
mA
Gate Leakage Current
I
GES
V
GE
=V
GES
V
CE
=0V - - 0.5
A
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
=60mA, V
CE
=10V 4.5 6.0 7.5
Volts
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=600A, V
GE
=15V - 2.1 2.8* Volts
I
C
=600A, V
GE
=15V,
T
j
=150
C
- 2.15 - Volts
Total Gate Charge
Q
G
V
CC
=600V,
I
C
=600A, V
GS
=15V
- 1800 -
nC
Diode Forward Voltage
V
FM
I
E
=600A, V
GS
=0V - - 2.8 Volts
*
Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj=25
C unless otherwise specified
Characteristic Symbol
Test
Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
-
-
60
nF
Output Capacitance
C
oes
-
-
21
nF
Reverse Transfer Capacitance
C
res
V
GE
=0V
V
CE
=10V
f=1MHz
- - 12 ns
Turn on Delay time
t
d(on)
-
-
350
ns
Rise Time
t
r
-
-
700
ns
Turn- off Delay Time
t
d(off)
-
-
350
ns
Fall Time
t
f
V
CC
=300V
I
C
=600A
V
GE1
=V
GE2
=15V
R
G
=1.0
- - 300 ns
Diode Reverse Recovery Time
t
rr
-
-
110
ns
Diode Reverse Recovery Charge
Q
rr
I
F
=600A
di
F
/dt=-1200A/
S
- 1.62 -
C
Thermal and Mechanical Characteristics, Tj=25
C unless otherwise specified
Characteristic Symbol
Test
Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
JC
Per IGBT
-
-
0.06
C/W
Thermal Resistance, Junction to Case
R
JC
Per Diode
-
-
0.12
C/W
Contact Thermal Resistance
(Thermal Grease Applied)
R
CF
Per Module
-
-
0.04
C/W
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