FAST RECOVERY DIODE
ARF370
Repetitive voltage up to
4500
V
Mean forward current
485
A
Surge current
4
kA
FINAL SPECIFICATION
feb 97 - ISSUE : 04
Symbol
Characteristic
Conditions
Tj
[C]
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
150
4500
V
V
RSM
Non-repetitive peak reverse voltage
150
4600
V
I
RRM
Repetitive peak reverse current
V=VRRM
150
50
mA
CONDUCTING
I
F (AV)
Mean forward current
180 sin ,50 Hz, Th=55C, double side cooled
485
A
I
F (AV)
Mean forward current
180 square,50 Hz,Th=55C,double side cooled
490
A
I
FSM
Surge forward current
Sine wave, 10 ms
150
4
kA
I t
I t
reapplied reverse voltage up to 50% VRSM
80 x1E3
As
V
FM
Forward voltage
Forward current = 1200 A
25
3.4
V
V
F(TO)
Threshold voltage
150
1.74
V
r
F
Forward slope resistance
150
1.700
mohm
SWITCHING
t rr
Reverse recovery time
I F = 1000 A
5
s
Q rr
Reverse recovery charge
di/dt=
100 A/s
150
700
C
I rr
Peak reverse recovery current
VR =
100 V
280
A
s
Softness (s-factor), min
0.5
V
FR
Peak forward recovery
di/dt=
400 A/s
150
80
V
MOUNTING
R
th(j-h)
Thermal impedance
Junction to heatsink, double side cooled
52
C/kW
T
j
Operating junction temperature
-30 / 150
C
F
Mounting force
8.4 / 9.4
kN
Mass
280
g
ORDERING INFORMATION : ARF370 S 45
standard specification
VRRM/100
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519
Sales Office:
Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
ARF370 FAST RECOVERY DIODE
FINAL SPECIFICATION feb 97 - ISSUE : 04
DISSIPATION CHARACTERISTICS
SQUARE WAVE
SINE WAVE
DC
180
120
90
60
30
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0
100
200
300
400
500
600
700
Mean Forward Current [A]
Power Dissipation [W]
180
120
90
60
30
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0
100
200
300
400
500
600
700
Mean Forward Current [A]
Power Dissipation [W]
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
ARF370 FAST RECOVERY DIODE
FINAL SPECIFICATION feb 97 - ISSUE : 04
SWITCHING CHARACTERISTICS
25% di Irr
REVERSE RECOVERY CHARGE - Tj = 150
0
200
400
600
800
1000
1200
1400
0
100
200
300
400
di/dt [A/s]
Qrr [C]
250 A
500 A
1000 A
REVERSE RECOVERY CURRENT - Tj = 150
0
100
200
300
400
500
600
700
800
0
100
200
300
400
di/dt [A/s]
Irr [A]
250 A
500 A
1000 A
FORWARD RECOVERY VOLTAGE
0
20
40
60
80
100
120
140
160
180
0
200
400
600
800
1000
1200
di/dt [A/s]
VFR [V]
Tj = 25 C
Tj 150 C
I
F
V
FR
V
F
ta
ta = Irr / (di/dt) tb = trr - ta
Softness (s factor) s = tb / ta
Energy dissipation during recovery Er = Vr (Qrr - Irr ta / 2 )
Irr
Vr
tb
I
F
d i/d t
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
ARF370 FAST RECOVERY DIODE
FINAL SPECIFICATION feb 97 - ISSUE : 04
Distributed by
FORWARD CHARACTERISTIC
Tj = 150 C
0
200
400
600
800
1000
1200
1400
1600
1.5
2.5
3.5
4.5
Forward Voltage [V]
Forward Current [A]
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
0.0
10.0
20.0
30.0
40.0
50.0
60.0
0.001
0.01
0.1
1
10
100
t[s]
Zth j-h [C/kW]
SURGE CHARACTERISTIC
Tj = 150 C
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
1
10
100
n cycles
ITSM [kA]
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and
roughness < 2 m.
In the interest of product improvement POSEICO SPA reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
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