TISP1072F3, TISP1082F3
DUAL ASYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
P R O D U C T I N F O R M A T I O N
1
SEPTEMBER 1993 - REVISED SEPTEMBER 1997
Copyright 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
q
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
q
Planar Passivated Junctions
Low Off-State Current
< 10 A
q
Rated for International Surge Wave Shapes
q
Surface Mount and Through-Hole Options
q
UL Recognized, E132482
description
These dual asymmetrical transient voltage
suppressors are designed for the overvoltage
protection of ICs used for the SLIC (Subscriber
Line Interface Circuit) function. The IC line driver
section is typically powered with 0 V and a
negative supply. The TISP1xxxF3 limits voltages
that exceed these supply rails and is offered in
two voltage variants to match typical negative
supply voltage values.
High voltages can occur on the line as a result of
exposure to lightning strikes and a.c. power
surges. Negative transients are initially limited by
breakdown clamping until the voltage rises to the
DEVICE
V
DRM
V
V
(BO)
V
`1072F3
- 58
- 72
`1082F3
- 66
- 82
WAVE SHAPE
STANDARD
I
TSP
A
2/10 s
FCC Part 68
80
8/20 s
ANSI C62.41
70
10/160 s
FCC Part 68
60
10/560 s
FCC Part 68
45
0.5/700 s
RLM 88
38
10/700 s
FTZ R12
VDE 0433
CCITT IX K17/K20
50
50
50
10/1000 s
REA PE-60
35
PACKAGE
PART # SUFFIX
Small-outline
D
Small-outline taped
and reeled
DR
Plastic DIP
P
Single-in-line
SL
breakover level, which causes the device to
crowbar. The high crowbar holding current
prevents d.c. latchup as the current subsides.
Positive transients are limited by diode forward
conduction. These protectors are guaranteed to
suppress and withstand the listed international
lightning surges on any terminal pair
device symbol
D PACKAGE
(TOP VIEW)
P PACKAGE
(TOP VIEW)
SL PACKAGE
(TOP VIEW)
MDXXAE
1
2
3
4
5
6
7
8
G
G
G
G
NC
T
R
NC
NC - No internal connection
1
2
3
4
5
6
7
8
R
G
T
G
T
G
G
R
Specified T terminal ratings require connection of pins 1 and 8.
Specified R terminal ratings require connection of pins 4 and 5.
MDXXAF
1
2
3
T
G
R
MDXXAG
MD1XAA
G
T
R
SD1XAA
Terminals T, R and G correspond to the
alternative line designators of A, B and C
TISP1072F3, TISP1082F3
DUAL ASYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
2
SEPTEMBER 1993 - REVISED SEPTEMBER 1997
P R O D U C T I N F O R M A T I O N
description (continued)
These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and
matched breakover control and are virtually transparent to the system in normal operation
The small-outline 8-pin assignment has been carefully chosen for these devices to maximise the inter-pin
clearance and creepage distances which are used by standards (e.g. IEC950) to establish voltage withstand
ratings.
absolute maximum ratings
NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.
2. Initially the TISP must be in thermal equilibrium with 0C < T
J
<70C. The surge may be repeated after the TISP returns to its initial
conditions.
3. Above 70C, derate linearly to zero at 150C lead temperature.
NOTE
4: Further details on capacitance are given in the Applications Information section.
RATING
SYMBOL
VALUE
UNIT
Repetitive peak off-state voltage ( 0C < T
J
<70C)
`1072F3
`1082F3
V
DRM
-58
-66
V
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
I
TSP
A
1/2 s (Gas tube differential transient, open-circuit voltage wave shape 1/2 s)
120
2/10 s (FCC Part 68, open-circuit voltage wave shape 2/10 s)
80
8/20 s (ANSI C62.41, open-circuit voltage wave shape 1.2/50 s)
70
10/160 s (FCC Part 68, open-circuit voltage wave shape 10/160 s)
60
5/200 s (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 s)
50
0.2/310 s (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 s)
38
5/310 s (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 s)
50
5/310 s (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 s)
50
10/560 s (FCC Part 68, open-circuit voltage wave shape 10/560 s)
45
10/1000 s (REA PE-60, open-circuit voltage wave shape 10/1000 s)
35
Non-repetitive peak on-state current (see Notes 2 and 3)
D Package
I
TSM
4
A rms
50 Hz,
1 s
P Package
6
SL Package
6
Initial rate of rise of on-state current,
Linear current ramp, Maximum ramp value < 38 A
di
T
/dt
250
A/s
Junction temperature
T
J
-40 to +150
C
Storage temperature range
T
stg
-40 to +150
C
electrical characteristics for the T and R terminals, 25C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TISP1072F3
TISP1082F3
UNIT
MIN
TYP
MAX
MIN
TYP
MAX
I
DRM
Repetitive peak off-
state current
V
D
= V
DRM
, 0C < T
J
<70C
10
10
A
I
D
Off-state current
V
D
= 50 V
10
10
A
C
off
Off-state capacitance
f = 100 kHz,
V
d
= 100 mV
V
D
= 0
(see Note 4)
D Package
0.08
0.5
0.08
0.5
pF
P Package
0.06
0.4
0.06
0.4
pF
SL Package
0.02
0.3
0.02
0.3
pF
3
SEPTEMBER 1993 - REVISED SEPTEMBER 1997
TISP1072F3, TISP1082F3
DUAL ASYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
P R O D U C T I N F O R M A T I O N
NOTE
5: Further details on capacitance are given in the Applications Information section.
electrical characteristics for the T and G and R and G terminals, 25C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TISP1072F3
TISP1082F3
UNIT
MIN
TYP
MAX
MIN
TYP
MAX
I
DRM
Repetitive peak off-
state current
V
D
= V
DRM
, 0C < T
J
<70C
-10
-10
A
V
(BO)
Breakover voltage
dv/dt = -250 V/ms,
R
SOURCE
= 300
-72
-82
V
V
(BO)
Impulse breakover volt-
age
dv/dt = -1000 V/s,
R
SOURCE
= 50
,
di/dt < -20 A/s
-78
-92
V
I
(BO)
Breakover current
dv/dt = -250 V/ms,
R
SOURCE
= 300
-0.1
-0.6
-0.1
-0.6
A
V
FRM
Peak forward recovery
voltage
dv/dt = 1000 V/s,
R
SOURCE
= 50
,
di
F
/dt < 20 A/s
3.3
3.3
V
V
F
Forward voltage
I
T
= 5 A,
t
W
= 100 s
3
3
V
V
T
On-state voltage
I
T
= -5 A,
t
W
= 100 s
-3
-3
V
I
H
Holding current
di/dt = +30 mA/ms
-0.15
-0.15
A
dv/dt
Critical rate of rise of
off-state voltage
Linear voltage ramp
Maximum ramp value < 0.85V
DRM
-5
-5
kV/s
I
D
Off-state current
V
D
= -50 V
-10
-10
A
C
off
Off-state capacitance
f = 100 kHz,
V
d
= 100 mV
Third terminal voltage = 0
(see Note 5)
V
D
= 0,
150
240
130
240
pF
V
D
= -5 V
65
104
55
104
pF
V
D
= -50 V
30
48
25
48
pF
thermal characteristics
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
R
JA
Junction to free air thermal resistance
P
tot
= 0.8 W, T
A
= 25C
5 cm
2
, FR4 PCB
D Package
160
C/W
P Package
100
SL Package
105
TISP1072F3, TISP1082F3
DUAL ASYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
4
SEPTEMBER 1993 - REVISED SEPTEMBER 1997
P R O D U C T I N F O R M A T I O N
PARAMETER MEASUREMENT INFORMATION
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR TERMINALS R AND G OR T AND G
Figure 2. VOLTAGE-CURRENT CHARACTERISTIC FOR TERMINALS R AND T
-v
I
(BR)
V
(BR)
V
(BR)M
V
DRM
I
DRM
V
D
I
H
I
T
V
T
I
TSM
I
TSP
V
(BO)
I
(BO)
I
D
Quadrant I
Forward
Conduction
Characteristic
+v
+i
I
F
V
F
I
TSM
I
TSP
-i
Quadrant III
Switching
Characteristic
PMXXAC
-v
I
(BR)
V
(BR)
V
(BR)M
V
DRM
I
DRM
V
D
I
H
I
T
V
T
I
TSM
I
TSP
V
(BO)
I
(BO)
I
D
Quadrant I
Switching
Characteristic
+v
+i
V
(BO)
I
(BO)
I
(BR)
V
(BR)
V
(BR)M
V
DRM
I
DRM
V
D
I
D
I
H
I
T
V
T
I
TSM
I
TSP
-i
Quadrant III
Switching
Characteristic
PMXXAA
5
SEPTEMBER 1993 - REVISED SEPTEMBER 1997
TISP1072F3, TISP1082F3
DUAL ASYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
R and G, or T and G terminals
Figure 3.
Figure 4.
Figure 5.
Figure 6.
OFF-STATE CURRENT
T
J
- Junction Temperature - C
-25
0
25
50
75
100
125
150
I
D
-
O
f
f
-
S
t
a
t
e
C
u
r
r
e
n
t
-
A
0001
001
01
1
10
100
TC1LAF
JUNCTION TEMPERATURE
vs
V
D
= -50 V
BREAKDOWN VOLTAGES
T
J
- Junction Temperature - C
-25
0
25
50
75
100
125
150
N
e
g
a
t
v
e
B
r
e
a
k
d
o
w
n
V
o
t
a
g
e
s
-
V
60.0
70.0
80.0
TC1LAL
JUNCTION TEMPERATURE
vs
V
(BO)
V
(BR)
V
(BR)
V
(BO)
V
(BR)M
V
(BR)M
I
(BR)
= 1 mA
'1072F3
'1082F3
ON-STATE CURRENT
V
T
- On-State Voltage - V
2
3
4
5
6
7 8 9
1
10
I
T
-
O
n
-
S
t
a
t
e
C
u
r
r
e
n
t
-
A
1
10
100
TC1LAC
ON-STATE VOLTAGE
vs
-40C
150C
25C
FORWARD CURRENT
V
F
- Forward Voltage - V
2
3
4
5
6
7 8 9
1
10
I
F
-
F
o
r
w
a
r
d
C
u
r
r
e
n
t
-
A
1
10
100
TC1LAE
FORWARD VOLTAGE
vs
-40C
150C
25C
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