BU426, BU426A
NPN SILICON POWER TRANSISTORS
P R O D U C T I N F O R M A T I O N
1
AUGUST 1978 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
q
Rugged Triple-Diffused Planar Construction
q
900 Volt Blocking Capability
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAA
B
C
E
1
2
3
absolute maximum ratings
at 25C case temperature (unless otherwise noted)
NOTE
1: This value applies for t
p
2 ms, duty cycle
2%.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
BU426
BU426A
V
CBO
800
900
V
Collector-emitter voltage (V
BE
= 0)
BU426
BU426A
V
CES
800
900
V
Collector-emitter voltage (I
B
= 0)
BU426
BU426A
V
CEO
375
400
V
Continuous collector current
I
C
6
A
Peak collector current (see Note 1)
I
CM
10
A
Continuous base current
I
B
+2, -0.1
A
Peak base current (see Note 1)
I
BM
3
A
Continuous device dissipation at (or below) 50C case temperature
P
tot
70
W
Operating junction temperature range
T
j
-65 to +150
C
Storage temperature range
T
stg
-65 to +150
C
BU426, BU426A
NPN SILICON POWER TRANSISTORS
2
AUGUST 1978 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, t
p
= 300 s, duty cycle
2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
CEO(sus)
Collector-emitter
sustaining voltage
I
C
= 100 mA
L = 25 mH
(see Note 2)
BU426
BU426A
375
400
V
I
CES
Collector-emitter
cut-off current
V
CE
= 800 V
V
CE
= 900 V
V
CE
= 800 V
V
CE
= 900 V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
T
C
= 125C
T
C
= 125C
BU426
BU426A
BU426
BU426A
1
1
2
2
mA
I
EBO
Emitter cut-off
current
V
EB
= 10 V
I
C
= 0
10
mA
h
FE
Forward current
transfer ratio
V
CE
= 5 V
I
C
= 0.6 A
(see Notes 3 and 4)
30
60
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= 0.5 A
I
B
= 1.25 A
I
C
= 2.5 A
I
C
= 4 A
(see Notes 3 and 4)
1.5
3
V
V
BE(sat)
Base-emitter
saturation voltage
I
B
= 0.5 A
I
B
= 1.25 A
I
C
= 2.5 A
I
C
= 4 A
(see Notes 3 and 4)
1.4
1.6
V
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
JC
Junction to case thermal resistance
1.1
C/W
resistive-load-switching characteristics at 25C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t
on
Turn on time
I
C
= 2.5 A
V
CC
= 250 V
I
B(on)
= 0.5 A
(see Figures 1 and 2)
I
B(off)
= -1 A
0.3
0.6
s
t
s
Storage time
2
3.5
s
t
f
Fall time
0.15
s
t
f
Fall time
I
C
= 2.5 A
V
CC
= 250 V
I
B(on)
= 0.5 A
T
C
= 95C
I
B(off)
= -1 A
0.2
0.75
s
3
AUGUST 1978 - REVISED MARCH 1997
BU426, BU426A
NPN SILICON POWER TRANSISTORS
P R O D U C T I N F O R M A T I O N
PARAMETER MEASUREMENT INFORMATION
Figure 1. Resistive-Load Switching Test Circuit
Figure 2. Resistive-Load Switching Waveforms
tp
F
100
V
1
680
F
V1
V cc = 250 V
+25 V
BD135
47
100
120
15
82
100
BD136
680
F
TUT
T
t
p
= 20
s
Duty cycle = 1%
V
1
= 15 V, Source Impedance = 50
0%
C
B
90%
10%
A
10%
90%
10%
90%
E
F
D
I B
IC
I
B(on)
I B(off)
0%
dI
B
dt
2 A/
s
A - B = t
d
B - C = t
r
E - F = t
f
D - E = t
s
A - C = t
on
D - F = t
off
BU426, BU426A
NPN SILICON POWER TRANSISTORS
4
AUGUST 1978 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
Figure 3.
Figure 4.
Figure 5.
Figure 6.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
01
10
10
h
FE
- Typical DC Current Gain
10
10
100
TCP741AF
V
CE
= 1.5 V
V
CE
= 5 V
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
I
B
- Base Current - A
0
05
10
15
20
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
0
1
2
3
4
5
6
7
TCP741AG
I
C
= 4 A
I
C
= 3 A
I
C
= 2 A
I
C
= 1 A
T
C
= 25C
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
I
B
- Base Current - A
0
05
10
15
20
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
0
1
2
3
4
5
6
7
TCP741AH
I
C
= 4 A
I
C
= 3 A
I
C
= 2 A
I
C
= 1 A
T
C
= 100C
BASE-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
I
B
- Base Current - A
0
02
04
06
08
10
12
14
16
V
BE(sat)
- Base-Emitter Saturation Voltage - V
06
07
08
09
10
11
12
TCP741AI
T
C
= 25C
I
C
= 4 A
I
C
= 3 A
I
C
= 2 A
I
C
= 1 A
5
AUGUST 1978 - REVISED MARCH 1997
BU426, BU426A
NPN SILICON POWER TRANSISTORS
P R O D U C T I N F O R M A T I O N
MAXIMUM SAFE OPERATING REGIONS
Figure 7.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
V
CE
- Collector-Emitter Voltage - V
10
10
100
1000
I
C
- Collector Current - A
001
0.1
10
10
100
SAP741AA
BU426
BU426A
t
p
= 0.2
s
t
p
= 0.5
s
t
p
= 1
s
t
p
= 2
s
t
p
= 6
s
t
p
= 20
s
DC Operation
PDF 
ZIP