BDV65, BDV65A, BDV65B, BDV65C
NPN SILICON POWER DARLINGTONS
P R O D U C T I N F O R M A T I O N
1
JUNE 1993 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
q
Designed for Complementary Use with
BDV64, BDV64A, BDV64B and BDV64C
q
125 W at 25C Case Temperature
q
12 A Continuous Collector Current
q
Minimum h
FE
of 1000 at 4 V, 5 A
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAA
B
C
E
1
2
3
absolute maximum ratings
at 25C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
p
0.1 ms, duty cycle
10%
2. Derate linearly to 150C case temperature at the rate of 0.56 W/C.
3. Derate linearly to 150C free air temperature at the rate of 28 mW/C.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
BDV65
BDV65A
BDV65B
BDV65C
V
CBO
60
80
100
120
V
Collector-emitter voltage (I
B
= 0)
BDV65
BDV65A
BDV65B
BDV65C
V
CEO
60
80
100
120
V
Emitter-base voltage
V
EBO
5
V
Continuous collector current
I
C
12
A
Peak collector current (see Note 1)
I
CM
15
A
Continuous base current
I
B
0.5
A
Continuous device dissipation at (or below) 25C case temperature (see Note 2)
P
tot
125
W
Continuous device dissipation at (or below) 25C free air temperature (see Note 3)
P
tot
3.5
W
Operating junction temperature range
T
j
-65 to +150
C
Storage temperature range
T
stg
-65 to +150
C
Lead temperature 3.2 mm from case for 10 seconds
T
L
260
C
BDV65, BDV65A, BDV65B, BDV65C
NPN SILICON POWER DARLINGTONS
2
JUNE 1993 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
NOTES: 4. These parameters must be measured using pulse techniques, t
p
= 300 s, duty cycle
2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
electrical characteristics at 25C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= 30 mA
I
B
= 0
(see Note 4)
BDV65
BDV65A
BDV65B
BDV65C
60
80
100
120
V
I
CEO
Collector-emitter
cut-off current
V
CB
= 30 V
V
CB
= 40 V
V
CB
= 50 V
V
CB
= 60 V
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
BDV65
BDV65A
BDV65B
BDV65C
2
2
2
2
mA
I
CBO
Collector cut-off
current
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
V
CB
= 120 V
V
CB
= 30 V
V
CB
= 40 V
V
CB
= 50 V
V
CB
= 60 V
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
T
C
= 150C
T
C
= 150C
T
C
= 150C
T
C
= 150C
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
0.4
0.4
0.4
0.4
2
2
2
2
mA
I
EBO
Emitter cut-off
current
V
EB
= 5 V
I
C
= 0
5
mA
h
FE
Forward current
transfer ratio
V
CE
= 4 V
I
C
= 5 A
(see Notes 4 and 5)
1000
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= 20 mA
I
C
= 5 A
(see Notes 4 and 5)
2
V
V
BE
Base-emitter
voltage
V
CE
= 4 V
I
C
= 5 A
(see Notes 4 and 5)
2.5
V
V
EC
Parallel diode
forward voltage
I
E
= 10 A
I
B
= 0
(see Notes 4 and 5)
3.5
V
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
JC
Junction to case thermal resistance
1
C/W
R
JA
Junction to free air thermal resistance
35.7
C/W
3
JUNE 1993 - REVISED MARCH 1997
BDV65, BDV65A, BDV65B, BDV65C
NPN SILICON POWER DARLINGTONS
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
Figure 1.
Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
05
20
10
10
h
FE
- Typical DC Current Gain
70000
100
1000
10000
TCS140AD
V
CE
= 4 V
t
p
= 300 s, duty cycle < 2%
T
C
= -40C
T
C
= 25C
T
C
= 100C
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
05
20
10
10
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
0
05
10
15
20
TCS140AE
t
p
= 300 s, duty cycle < 2%
I
B
= I
C
/ 100
T
C
= -40C
T
C
= 25C
T
C
= 100C
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
05
20
10
10
V
BE(sat)
- Base-Emitter Saturation Voltage - V
0
05
10
15
20
25
30
TCS140AF
T
C
= -40C
T
C
= 25C
T
C
= 100C
I
B
= I
C
/ 100
t
p
= 300 s, duty cycle < 2%
BDV65, BDV65A, BDV65B, BDV65C
NPN SILICON POWER DARLINGTONS
4
JUNE 1993 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
THERMAL INFORMATION
Figure 4.
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
T
C
- Case Temperature - C
0
25
50
75
100
125
150
P
tot
- Maximum Power Dissipation - W
0
20
40
60
80
100
120
140
TIS140AA
5
JUNE 1993 - REVISED MARCH 1997
BDV65, BDV65A, BDV65B, BDV65C
NPN SILICON POWER DARLINGTONS
P R O D U C T I N F O R M A T I O N
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
SOT-93
ALL LINEAR DIMENSIONS IN MILLIMETERS
4,90
4,70
1,37
1,17
0,78
0,50
2,50 TYP.
15,2
14,7
12,2 MAX.
16,2 MAX.
18,0 TYP.
31,0 TYP.
1,30
1,10
11,1
10,8
4,1
4,0
3,95
4,15
1
2
3
NOTE A: The centre pin is in electrical contact with the mounting tab.
MDXXAW
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