2EL2, 2EL3, 2EL4
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
P R O D U C T I N F O R M A T I O N
1
AUGUST 1998
Copyright 1998, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
Manufactured by TI using silicon designed and manufactured by Power Innovations, Bedford, UK.
TELECOMMUNICATION SYSTEM PRIMARY PROTECTION
device symbol
T
R
SD4XAA
Terminals T and R correspond to the
alternative line designators of A and B
T(A)
R(B)
CELL PACKAGE
(SIDE VIEW)
MD4XANA
q
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
q
Rated for International Surge Wave Shapes
q
Gas Discharge Tube (GDT) Replacement
DEVICE
V
(BR)
MINIMUM
V
V
(BO)
MINIMUM
V
V
(BO)
MAXIMUM
V
2EL2
245
265
400
2EL3
200
265
2EL4
215
265
DEVICE
ITU-T K28
(10/700)
GR-974-CORE
(10/1000)
I
TSP
A
I
TSP
A
2EL2
125
100
2EL3
125
100
2EL4
125
100
q
Planar Passivated Junctions in a Protected Cell Construction
Low Off-State Current
Extended Service Life
q
Soldered Copper Electrodes
High Current Capability
Cell Construction Short Circuits Under Excessive Current Conditions
description
These devices are primary protector components for semiconductor arrester assemblies intended to meet the
generic requirements of Bellcore GR-974-CORE (November 1994) or ITU-T Recommendation K28 (03/93).
To conform to the specified environmental requirements, the 2ELx must be installed in a housing which
maintains a stable microclimate during these tests (e.g. FIGURE I.1/K28).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially
clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to
crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the
overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup
as the diverted current subsides. This 2ELx range consists of three voltage variants to meet various
maximum system voltage levels. They are guaranteed to voltage limit and withstand the listed international
lightning surges in both polarities.
These monolithic protection devices are constructed using two nickel plated copper electrodes soldered to
each side of the silicon chip. This packaging approach allows heat to be removed from both sides of the
silicon, resulting in the doubling of the devices thermal capacity, enabling a power line cross current capability
of 10 A rms for 1 second. One of the 2ELx's copper electrodes is specially shaped to promote a progressive
shorting action (at 50/60 Hz currents greater than 60 A). The assembly must hold the 2ELx in compression,
so that the cell electrodes can be forced together during overstress testing. Under excessive power line cross
conditions the 2ELx will fail short circuit, providing maximum protection to the equipment.
2EL2, 2EL3, 2EL4
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
2
AUGUST 1998
P R O D U C T I N F O R M A T I O N
absolute maximum ratings, T
A
= 25C (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
I
TSP
A
5/310 s (ITU-T K28, 10/700 s voltage wave shape)
2EL2
2EL3
2EL4
-20C to 65C
-20C to 65C
-20C to 65C
125
125
125
10/1000 s (GR-974-CORE, 10/1000 s voltage wave shape)
2EL2
2EL3
2EL4
-20C to 65C
-20C to 65C
-20C to 65C
100
100
100
Non-repetitive peak on-state current (see Note 1)
I
TSM
10
10
10
A rms
full sine wave, 50/60 Hz, 1 s
2EL2
2EL3
2EL4
-40C to 65C
-20C to 65C
-40C to 65C
Junction temperature
T
J
-40 to +150
C
Storage temperature range
T
stg
-40 to +150
C
NOTES: 1. The surge may be repeated after the device has returned to thermal equilibrium.
2. Most PTT's quote an unloaded voltage waveform. In operation the 2ELx essentially shorts the generator output. The resulting
loaded current waveform is specified.
electrical characteristics for the T and R terminals, T
A
= 25C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
(BR)
Breakdown Voltage
I
(BR)
= 20 mA, (see Note 3)
2EL2
-40C to 65C
245
V
V
(BO)
Breakover voltage
dv/dt = 0.2 V/s,
R
SOURCE
> 200
2EL2
2EL3
2EL4
+15C to 25C
-40C to 65C
+15C to 25C
-20C to 65C
25C
265
200
215
400
265
265
V
V
(BO)
Impulse breakover
voltage
100 V/s
dv/dt
1000 V/s,
di/dt
10 A/s
2EL2
2EL3
2EL4
-20C to 65C
-20C to 65C
-20C to 65C
400
350
350
V
Impulse reset
Sources are 52.5 V O.C., 260 mA S.C. and
135 V O.C., 200 mA S.C.
on-state current 25 A, 10/1000 s impulse
2EL2
2EL3
2EL4
-20C to 65C
-20C to 65C
-20C to 65C
20
20
20
ms
I
D
Off-state current
V
D
= 50 V (see Note 4)
V
D
= 200 V
2EL2
2EL3
2EL4
2EL2
2EL3
2EL4
-40C to 65C
-20C to 65C
-40C to 65C
-40C to 65C
15C to 25C
0C to 65C
0.5
0.5
0.5
10
1
10
A
C
off
Off-state capacitance
f = 1 MHz,
V
d
= 1 Vrms, V
D
= 0, 2EL2
2EL3
2EL4
-40C to 65C
-20C to 65C
-40C to 65C
150
150
150
pF
NOTES: 3. Meets Bellcore GR-974-CORE Issue 1, November 1994 - Rated Voltage Test (4.7)
4. This device is sensitive to light. Suggest that this parameter be measured in a dark environment
3
AUGUST 1998
2EL2, 2EL3, 2EL4
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
P R O D U C T I N F O R M A T I O N
PARAMETER MEASUREMENT INFORMATION
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS
ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINAL
-v
I
(BR)
V
(BR)
V
D
I
TSM
I
TSP
V
(BO)
I
D
Quadrant I
Switching
Characteristic
+v
+i
V
(BO)
I
(BR)
V
(BR)
V
D
I
D
I
TSM
I
TSP
-i
Quadrant III
Switching
Characteristic
PMXXAG
2EL2, 2EL3, 2EL4
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
4
AUGUST 1998
P R O D U C T I N F O R M A T I O N
MECHANICAL DATA
cell package
BUTTON CELL 2ELx
ALL LINEAR DIMENSIONS IN MILLIMETERS AND PARENTHETICALLY IN INCHES
2x
Top Electrode
Sleeve
Bidirectional
Bottom Electrode
Silicon Chip
MDXXAK
2,31 (0.091)
2,11 (0.083)
0,178 (0.007)
MAX
0,508 (0.020)
MAX
4,27 (0.168)
3,76 (0.148)
1,65 (0.065)
1,27 (0.050)
5
AUGUST 1998
2EL2, 2EL3, 2EL4
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
P R O D U C T I N F O R M A T I O N
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product
or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is
current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with
PI's standard warranty. Testing and other quality control techniques are utilised to the extent PI deems necessary to support this
warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government
requirements.
PI assumes no liability for applications assistance, customer product design, software performance, or infringement of patents
or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design
right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORISED, OR WARRANTED TO BE SUITABLE
FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright 1998, Power Innovations Limited
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