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Электронный компонент: TDA8580

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DATA SHEET
Preliminary specification
Supersedes data of 1996 Jan 4
File under Integrated Circuits, IC01
1998 Feb 25
INTEGRATED CIRCUITS
TDA8580
Multi-purpose power amplifier
1998 Feb 25
2
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
FEATURES
General
Operating voltage from 8 to 28 V
Low distortion
Few external components, fixed gain
High output power
Can be used as a stereo amplifier in bridge-tied load
(BTL) or quad single-ended (SE) amplifiers
Single-ended mode without loudspeaker capacitor
Mute and standby mode with one- or two-pin operation
Diagnostic information for Dynamic Distortion Detector
(DDD), high temperature (145
C) and short-circuit
No switch on/off plops when switching between
`standby' to `mute' and from `mute' to `on'
Low offset variation at outputs between `mute' and `on'
Fast mute on supply voltage drops.
Protection
Reverse polarity safe
Short-circuit proof to ground, positive supply voltage on
all pins and across load
ESD protected on all pins
Thermal protection against temperatures exceeding
150
C
Load dump protection
Protected against open-circuit ground pins and output
short-circuited to supply ground.
GENERAL DESCRIPTION
The TDA8580 is a stereo bridge-tied load (BTL) or a quad
single-ended amplifier that operates over a wide supply
voltage range from 8 to 28 V. This makes it suitable for
many applications, such as car radios, television and
home-sound systems.
Because of an internal voltage buffer, this device can be
used without a capacitor connected in series with the load
(SE application). A combined BTL and 2
SE application
can also be configured.
ORDERING INFORMATION
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
TDA8580
DBS17P
plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
SOT243-1
1998 Feb 25
3
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
P
operating supply voltage
8.0
-
28
V
I
q(tot)
total quiescent current
V
P
= 14.4 V
-
120
140
mA
I
stb
standby supply current
V
P
= 14.4 V
-
1
50
A
G
v
voltage gain
single-ended
25
26
27
dB
bridge-tied load
31
32
33
dB
Bridge-tied load application
P
o
output power
THD = 0.5%; V
P
= 14.4 V;
R
L
= 4
-
16
-
W
THD = 0.5%; V
P
= 24 V;
R
L
= 8
-
28
-
W
THD
total harmonic distortion
f
i
= 1 kHz; P
o
= 1 W;
V
P
= 14.4 V; R
L
= 4
-
0.05
-
%
f
i
= 1 kHz; P
o
= 10 W;
V
P
= 24 V; R
L
= 8
-
0.05
-
%
V
offset(DC)
DC output offset voltage
V
P
= 14.4 V; `mute'
condition; R
L
= 4
-
10
20
mV
V
P
= 14.4 V; `on' condition
-
0
100
mV
V
no
noise output voltage
R
s
= 1 k
;
V
P
= 14.4 V
-
100
150
V
SVRR
supply voltage ripple rejection
f
i
= 1 kHz; V
ripple(p-p)
= 2 V;
`on' or `mute' condition;
R
s
= 0
55
-
-
dB
Single-ended application
P
o
output power
THD = 0.5%; V
P
= 14.4 V;
R
L
= 4
-
4.2
-
W
THD = 0.5%; V
P
= 24 V;
R
L
= 4
-
13
-
W
V
offset(DC)
DC output offset voltage
V
P
= 14.4 V; `mute'
condition; R
L
= 4
-
10
20
mV
V
P
= 14.4 V; `on' condition
-
0
100
mV
V
no
noise output voltage
R
s
= 1 k
; V
P
= 14.4 V
-
80
120
V
SVRR
supply voltage ripple rejection
f
i
= 1 kHz; V
ripple(p-p)
= 2 V;
`on' or `mute' condition;
R
s
= 0
45
-
-
dB
1998 Feb 25
4
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
BLOCK DIAGRAM
Fig.1 Block diagram.
handbook, full pagewidth
MGE010
30 k
45 k
45
k
45
k
60
k
60
k
BUFFER
INTERFACE
DIAGNOSTIC
5
13
6
MUTE
STANDBY
DIAG
BUFFER
Vpx
Vpx
OA
45 k
-
-
+
+
OA
V/I
-
-
+
+
V/I
45 k
60
k
60
k
OA
45 k
-
-
+
+
OA
V/I
-
-
+
+
V/I
7
IN1
8
IN2
10
12
11
IN3
IN5
IN4
1
4
9
14
17
OUT4
+
OUT3
-
BUFFER
OUT2
-
OUT1
+
3
15
VP1
VP2
2
16
PGND1
PGND2
TDA8580
1998 Feb 25
5
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
PINNING
SYMBOL
PIN
DESCRIPTION
OUT1+
1
non-inverting output 1
PGND1
2
power ground 1
V
P1
3
supply voltage 1
OUT2
-
4
inverting output 2
STANDBY
5
`standby'/`mute'/`on' selection
DIAG
6
diagnostic output
IN1
7
input 1
IN2
8
input 2
BUFFER
9
buffer output
(single-ended output buffer)
IN3
10
input 3
IN4
11
input 4
IN5
12
input 5; signal ground capacitor
MUTE
13
`mute'/`on' selection
OUT3
-
14
inverting output 3
V
P2
15
supply voltage 2
PGND2
16
power ground 2
OUT4+
17
non-inverting output 4
Fig.2 Pin configuration.
handbook, halfpage
TDA8580
MGE009
OUT1
+
PGND1
VP1
OUT2
-
STANDBY
DIAG
IN1
IN2
BUFFER
IN3
IN4
IN5
MUTE
OUT3
-
VP2
PGND2
OUT4
+
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
1998 Feb 25
6
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
FUNCTIONAL DESCRIPTION
The TDA8580 is a multi-purpose power amplifier with four
amplifiers which can be connected in the following
configurations with high output power and low distortion (at
minimum quiescent current);
Dual bridge-tied load (BTL) amplifiers
Quad single-ended amplifiers
Dual single-ended amplifiers and one bridge-tied load
amplifier.
The amplifier can be switched on (play or `mute') and off
(`standby') by the MUTE and STANDBY pins (for
interfacing directly with a microcontroller). One-pin
operation is also possible by applying a voltage greater
than 8 V to the `standby'/'mute'/'on' selection pin (pin 5) to
switch the amplifier in `on' mode.
Special attention is given to the dynamic behaviour as
follows:
Noise suppression during engine start.
No plops when switching from `standby' to `on'.
Slow offset change between `mute' and `on' (controlled
by MUTE and STANDBY pins).
Low noise levels, which are independent of the supply
voltage.
Protections are included to avoid the IC being damaged at:
Over temperature: T > 150
C.
Short-circuit of the output pin(s) to ground or supply rail.
When short-circuited, the power dissipation is limited.
A missing-current limiter which limits the maximum short
circuit output current to PGND or V
P
pins to 1 A.
The dissipation and speaker current will be minimized
because the short-circuited amplifier is switched off. The
chip temperature is limited by the temperature
protection.
ESD protection (Human Body Model 3000 V, Machine
Model 300 V).
Energy handling. A DC voltage of 6 V can be connected
to the output of any amplifier while the supply pins are
short-circuited to ground. No high DC current will flow
from the supply pins of the amplifier.
Diagnostics are available for the following conditions
(see Figs 4 to 7).
Amplifier in `mute'
Chip temperature greater than 145
C
Distortion over 2% due to clipping
Short-circuit protection active.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. The maximum supply voltage under short circuit conditions is 28 V with an additional resistor in the supply line of
tbf
.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
P
supply voltage
operating
8
28
V
load dump protected;
see Fig.3
-
45
V
V
DIAG
voltage on diagnostic pin
-
18
V
I
OSM
non-repetitive peak output current
-
6
A
I
ORM
repetitive peak output current
-
4.5
A
V
rev
reverse polarity voltage
-
6
V
V
sc
AC and DC short-circuit voltage of output
pins across loads and to ground or supply
pins
no external series
resistor in supply line;
note 1
-
24
V
P
tot
total power dissipation
-
75
W
T
j
junction temperature
-
150
C
T
stg
storage temperature
-
55
+150
C
T
amb
operating ambient temperature
-
40
+150
C
1998 Feb 25
7
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
THERMAL CHARACTERISTICS
CHARACTERISTICS
V
P
= 14.4 V; T
amb
= 25
C; f
i
= 1 kHz; R
L
=
; measured in test circuit of Fig.8; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
in free air
40
K/W
R
th j-c
thermal resistance from junction to case
1.5
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply
V
P
operating supply voltage
8.0
14.4
28
V
I
q(tot)
total quiescent current
-
120
140
mA
I
stb
standby current
-
1
50
A
V
O
DC output voltage
V
P
= 14.4 V
-
7.0
-
V
V
P(mute)
low supply voltage mute
6.0
7.0
8.0
V
V
o
single-ended and bridge-tied
load output voltage
V
P
= 14.4 V; `mute' condition;
R
L
= 4
-
-
20
mV
V
I
DC input voltage
V
P
= 14.4 V
-
4.0
-
V
S
TANDBY PIN
(see Table 1)
V
5(stb)
voltage at STANDBY pin for
`standby' condition
0
-
0.8
V
V
hys(5)(stb)
hysteresis voltage at
STANDBY pin for `standby'
condition
note 1
-
0.2
-
V
V
5(mute)
voltage at STANDBY pin for
`mute' condition
V
13
< 1 V
2.0
-
5.5
V
V
5(on)
voltage at STANDBY pin for
`on' condition
V
13
< 1 V; V
P
> 9 V; note 2
8.0
-
18
V
M
UTE PIN
(see Table 1)
V
13(mute)
voltage at MUTE pin for
`mute' condition
V
5
= 5 V
0
-
1.0
V
V
13(on)
voltage at MUTE pin for
`on' condition
V
5
= 5 V
3.5
-
5.5
V
Diagnostic; output buffer (open-collector); see Figs 4, 5, 6 and 7
V
OL
low level output voltage
I
sink
= 1 mA
-
0.2
0.8
V
I
LI
leakage current
V
DIAG
= 14.4 V
-
-
1
A
CD
clip detector
V
DIAG
< 0.8 V
tbf
2
tbf
%
T
j(diag)
junction temperature for high
temperature warning
V
DIAG
< 0.8 V
-
145
-
C
1998 Feb 25
8
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
Stereo BTL application (see Fig.8)
THD
total harmonic distortion
f
i
= 1 kHz; P
o
= 1 W; R
L
= 4
-
0.05
0.1
%
f
i
= 10 kHz; P
o
= 1 W;
R
L
= 4
;
Filter: 22 Hz < f < 30 kHz
-
0.2
-
%
f
i
= 1 kHz; P
o
= 1 W;
V
P
= 14.4 V; R
L
= 4
-
0.05
-
%
f
i
= 1 kHz; P
o
= 10 W;
V
P
= 24 V; R
L
= 8
-
0.05
-
%
P
o
output power
THD = 0.5%; V
P
= 14.4 V;
R
L
= 4
15
16
-
W
THD = 0.5%; V
P
= 24 V;
R
L
= 8
25
28
-
W
THD = 10%; V
P
= 14.4 V;
R
L
= 4
18
20
-
W
THD = 10%; V
P
= 24 V;
R
L
= 8
-
35
-
W
G
v
voltage gain
V
o(rms)
= 3 V
31
32
33
dB
cs
channel separation
P
o
= 2 W; f
i
= 1 kHz; R
L
= 4
40
55
-
dB
G
v
channel unbalance
-
-
1
dB
V
offset(DC)
DC output offset voltage
V
P
= 14.4 V; `on' condition
-
0
100
mV
V
P
= 14.4 V; `mute' condition;
R
L
= 4
-
10
20
mV
V
no
noise output voltage
R
s
= 1 k
; V
P
= 14.4 V; note 3
-
100
150
V
V
no(mute)
noise output voltage mute
note 3
-
0
20
V
V
o(mute)
output voltage mute
V
i(rms)
= 1 V
-
3
500
V
SVRR
supply voltage ripple rejection
R
s
= 0
;
f
i
= 1 kHz;
V
ripple(p-p)
= 2 V; `on' or `mute'
condition
55
-
-
dB
Z
i
input impedance
23
30
37
k
CMRR
common mode rejection ratio
R
s
= 0
; V
i(rms)
= 0.5 V;
f
i
= 1 kHz
-
60
-
dB
Quad SE application (see Fig.9)
THD
total harmonic distortion
f
i
= 1 kHz; P
o
= 1 W; R
L
= 4
-
0.05
0.1
%
f
i
= 10 kHz; P
o
= 1 W;
R
L
= 4
;
Filter: 22 Hz < f < 30 kHz
-
0.2
-
%
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
1998 Feb 25
9
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
Notes to the characteristics
1. Hysteresis between rise and fall voltage when MSB pin is controlled with real voltage source (the hysteresis depends
on resistor connected to MSB pin).
2. At lower V
P
the voltage at the STANDBY pin for `on' condition will be adjusted automatically to maintain an
`on' condition at low battery voltage (down to 8 V) when using one-pin operation.
3. The noise output is measured in a bandwidth of 20 Hz to 20 kHz.
Table 1
Selection of `standby', `mute' and `on'.
P
o
output power
THD = 0.5%; V
P
= 14.4 V;
R
L
= 4
4
4.2
-
W
THD = 0.5%; V
P
= 24 V;
R
L
= 4
11.5
13
-
W
THD = 10%; V
P
= 14.4 V;
R
L
= 4
-
5.5
-
W
THD = 10%; V
P
= 24 V;
R
L
= 4
14
16
-
W
G
v
voltage gain
V
o(rms)
= 3 V
25
26
27
dB
cs
channel separation
P
o
= 2 W; f
i
= 1 kHz; R
L
= 4
40
46
-
dB
G
v
channel unbalance
-
-
1
dB
V
offset(DC)
DC output offset voltage
V
P
= 14.4 V; `on' condition
-
0
100
mV
V
P
= 14.4 V; `mute' condition;
R
L
= 4
-
10
20
mV
V
no
noise output voltage
R
s
= 1 k
; V
P
= 14.4 V; note 3
-
80
120
V
V
no(mute)
noise output voltage mute
note 3
-
0
20
V
V
o(mute)
output voltage mute
V
i(rms)
= 1 V
-
3
500
V
SVRR
supply voltage ripple rejection
f
i
= 1 kHz; V
ripple(p-p)
= 2 V, `on'
or `mute' condition; R
s
= 0
45
-
-
dB
Z
i
input impedance
46
60
74
k
CMRR
common mode rejection ratio
V
i(rms)
= 0.5 V; f
i
= 1 kHz;
R
s
= 0
-
60
-
dB
VOLTAGE AT PIN 5
VOLTAGE AT PIN 13
FUNCTION
V
5
< 0.8 V
don't care
`standby' (off)
2 V < V
5
< 5.3 V
V
13
< 1 V
`mute' (DC settled)
2 V < V
5
< 5.3 V
3.5 V < V
13
< 5.3 V
`on' (AC operating)
V
5
8.0 V
don't care
`on' (AC operating)
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
1998 Feb 25
10
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
Fig.3 Load dump voltage waveform.
handbook, halfpage
MGL404
tr
VP
tf
45 V
14.4 V
t (ms)
Fig.4 Diagnostic waveform: normal play.
handbook, halfpage
DIAG
STANDBY
amplifier
output
amplifier
in mute
play
normal
on
mute
MGE019
Fig.5 Diagnostic waveform: short-circuit overload.
handbook, halfpage
MGE020
DIAG
amplifier
output
short-circuit
overload
Fig.6 Diagnostic waveform: DDD play.
handbook, halfpage
MGE021
DIAG
amplifier
output
normal
play
DDD
normal
1998 Feb 25
11
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
Fig.7 Diagnostic waveform: short-circuit to GND and V
P
.
handbook, halfpage
DIAG
amplifier
output
short-circuit to
PGND
VP
MGE022
1998 Feb 25
12
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
APPLICATION INFORMATION
Fig.8 Stereo bridge-tied load application.
handbook, full pagewidth
MGE011
30 k
45 k
45
k
45
k
60
k
60
k
BUFFER
INTERFACE
DIAGNOSTIC
5
13
6
MUTE
STANDBY
DIAG
BUFFER
Vpx
Vpx
OA
45 k
-
-
+
+
-
+
-
+
OA
V/I
-
-
+
+
V/I
45 k
60
k
60
k
OA
45 k
-
-
+
+
OA
V/I
-
-
+
+
V/I
7
IN1
8
IN2
10
12
11
IN3
IN5
IN4
1
4
9
14
17
OUT4
+
OUT3
-
BUFFER
OUT2
-
OUT1
+
3
15
2
16
PGND1
PGND2
TDA8580
1000
F
16/40 V
100 nF
10
k
100
F
10 V
220 nF
+
5 V
4 or 8
4 or 8
VinL
220 nF
VinR
VP
VP1
VP2
1998 Feb 25
13
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
Fig.9 Quad single-ended application.
handbook, full pagewidth
MGE013
30 k
45 k
45
k
45
k
60
k
60
k
BUFFER
INTERFACE
DIAGNOSTIC
5
13
6
MUTE
STANDBY
DIAG
BUFFER
Vpx
Vpx
OA
45 k
-
-
+
+
-
+
-
+
-
+
-
+
OA
V/I
-
-
+
+
V/I
45 k
60
k
60
k
OA
45 k
-
-
+
+
OA
V/I
-
-
+
+
V/I
7
IN1
8
IN2
10
12
11
IN3
IN5
IN4
1
4
9
14
17
OUT4
+
OUT3
-
BUFFER
OUT2
-
OUT1
+
3
15
2
16
PGND1
PGND2
TDA8580
1000
F
16/40 V
100 nF
10
k
100
F
10 V
220 nF
+
5 V
4 or 8
4 or 8
4 or 8
VinR
220 nF
VinL
220 nF
VinL
FRONT
220 nF
VinR
4 or 8
REAR
VP
VP1
VP2
1998 Feb 25
14
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
Fig.10 Dual single-ended and one bridge-tied load application.
handbook, full pagewidth
MGE012
30 k
45 k
45
k
45
k
60
k
60
k
BUFFER
INTERFACE
DIAGNOSTIC
5
13
6
MUTE
STANDBY
DIAG
BUFFER
Vpx
Vpx
OA
45 k
-
-
+
+
-
+
-
+
OA
V/I
-
-
+
+
V/I
45 k
60
k
60
k
OA
45 k
-
-
+
-
+
+
OA
V/I
-
-
+
+
V/I
7
IN1
8
IN2
10
12
11
IN3
IN5
IN4
1
4
9
14
17
OUT4
+
OUT3
-
BUFFER
OUT2
-
OUT1
+
3
15
2
16
PGND1
PGND2
TDA8580
1000
F
16/40 V
100 nF
10
k
100
F
10 V
220 nF
+
5 V
4 or 8
4 or 8
4 or 8
VinR
220 nF
VinL
220 nF
VinR
VP
VP1
VP2
1998 Feb 25
15
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
INTERNAL PIN CONFIGURATION
PIN
NAME
EQUIVALENT CIRCUIT
7, 8, 10,
11 and 12
inputs
1, 4,
14 and 17
outputs
5 and 13
mode select
handbook, halfpage
MGE014
VP
IN
handbook, halfpage
MGE015
VP
OUT
0.5 VP
handbook, halfpage
MGE016
VP
1998 Feb 25
16
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
SOT243-1
0
5
10 mm
scale
D
L
E
A
c
A
2
L
3
Q
w
M
b
p
1
d
D
Z
e
e
x
h
1
17
j
Eh
non-concave
95-03-11
97-12-16
DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
SOT243-1
view B: mounting base side
m
2
e
v
M
B
UNIT
A
e
1
A
2
b
p
c
D
(1)
E
(1)
Z
(1)
d
e
D
h
L
L
3
m
mm
17.0
15.5
4.6
4.2
0.75
0.60
0.48
0.38
24.0
23.6
20.0
19.6
10
2.54
v
0.8
12.2
11.8
1.27
e
2
5.08
2.4
1.6
E
h
6
2.00
1.45
2.1
1.8
3.4
3.1
4.3
12.4
11.0
Q
j
0.4
w
0.03
x
1998 Feb 25
17
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our
"IC Package Databook" (order code 9398 652 90011).
Soldering by dipping or by wave
The maximum permissible temperature of the solder is
260
C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
stg max
). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
Repairing soldered joints
Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300
C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400
C, contact may be up to 5 seconds.
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1998 Feb 25
18
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
NOTES
1998 Feb 25
19
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580
NOTES
Internet: http://www.semiconductors.philips.com
Philips Semiconductors a worldwide company
Philips Electronics N.V. 1998
SCA57
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Printed in The Netherlands
545102/1200/02/pp20
Date of release: 1998 Feb 25
Document order number:
9397 750 02237